USApp_20090163026 (1063231)
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US 20090163026A1(19) United States(12) Patent Application Publication (10) Pub. No.: US 2009/0163026 A1Rathsack et al.(54)(43) Pub. Date:IMMERSION LITHOGRAPHY WAFER EDGE(22)Filed:Dec. 19, 2008READ REMOVAL FOR WAFER AND__Related U.S. Appllcatlml Data(60)(75) Inventors:Jun. 25, 2009Benjamen Michael Rathsack,Provisional application No. 61/016,546, ?led on Dec.24, 2007Austin, TX (US); Mark HowellP bl.Somervell, Austin, TX (US)ut.Cllea Ion.? t.assl ca Ion(51)Int.
Cl.H01L 21/306TEXAS INSTRUMENTS INCORPORATED(52)US. Cl. ................ .. 438/694; 257/E21.219; 438/748P 0 BOX 655474, M/S 3999DALLAS, TX 75265(57)Correspondence Address:(200601)ABSTRACTA method of performing a single step/single solvent edgebead removal (EBR) process on a photolithography layer(73) Assignee:TEXAS INSTRUMENFESIBISCORPORATED’ Da as’ TX( )stack including a photoresist layer and a top coat layer usingpropylene glycol monomethyl ether acetate (PGMEA) or amixture of PGMEA and gamma-butyrolactone (GBL) is dis(21) Appl, No.112/339,208patible With organic and inorganic BARC layers.closed.
The single step/single solvent EBR process is com216\)\22o\ ’\\\IA212 \( ////\W208 _/)\ \ \ \ \ \ \ \ \/ / \20 4//// A\\\\202Patent Application PublicationUS 2009/0163026 A1Jun. 25, 2009 Sheet 1 0f 9106104\1/ / //////102mFIG. 1A198104M / / / / //\102@FIG. 1B11211°\/ / /104///// /\/ \///102100FIG.
1CPatent Application PublicationJun. 25, 2009 Sheet 2 0f 9US 2009/0163026 A111411°“104\\ \ \ \ \'// / / / / x102mFIG. 1])116\(/110JA104/\/ ///\ \ \ \ /Q // / /118//102mFIG. 1E120116 \Vi\\'11O~/4\104/\\\\\\122118///4\\\\\\\\////)\////102FIG. 1FPatent Application Publication)116W110w\//Jun. 25, 2009 Sheet 3 0f 9\\/US 2009/0163026 A1\124/ / /\/\ > k102EFIG. 1G296204 \1/ ////\'§EFIG. 2A210204//// A\\\202EFIG.
2BPatent Application PublicationJun. 25, 2009 Sheet 4 0f 9US 2009/0163026 A1216x \\'212\(/208A\204/\/\/\/\/\/\\\v/ A\/\218\/\214\\202EFIG. 2C216\x212w /\'208%\204/220//\\//\\/\\\\v/ Awl\\“\\202MFIG. 2DPatent Application PublicationJun. 25, 2009 Sheet 5 0f 9\/// \/// \///\\v/w \\Mm 0 W306 J304/US 2009/0163026 A1/m%300FIG. 3406%404\/402400FIG. 4Patent Application PublicationJun. 25, 2009 Sheet 6 0f 95L05121\ \'5°8\(/ /506w \504/US 2009/0163026 A1\/\/\ \ \ \ \\'///\\/\/\/\/\,\502@FIG. 5612\I\(/ /606w\604/61O1\\614\/\/,///\\\\ \/ / / / /\\\\\\608/\/ A602600FIG.
6Patent Application PublicationJun. 25, 2009 Sheet 7 0f 9US 2009/0163026 A1712x71°\(/\'708w\704/714/\//\/\\\\v//n'706\//702mFIG.781\21\ \'814\\ \ \ \ \\'//\\\810 / ///aos./i\ \ \ \ \804/////806i//802@FIG. 8Patent Application PublicationJun. 25, 2009 Sheet 8 0f 99141\912\(/908%'US 2009/0163026 A1916/ /\/\/\\\910/\906\ \ \ \ \902@FIG.91008(\1006\1/1004/11010\\\/ /\\\\\'/ /\/\ \\\/\1002FIG. 10Patent Application PublicationJun. 25, 2009 Sheet 9 0f 9US 2009/0163026 A1110811101/'/1106\1\\/1104/\/\//\A’\//A11021100FIG. 111210II1208\V\/ \/1204//\//\/12121206/ \/ \\///1202FIG. 12US 2009/0163026 A1IMMERSION LITHOGRAPHY WAFER EDGEBEAD REMOVAL FOR WAFER ANDSCANNER DEFECT PREVENTIONFIELD OF THE INVENTION[0001] This invention relates to the ?eld of integrated circuits. More particularly, this invention relates to methods toimprove immersion lithography processes used to fabricateJun.
25, 2009[0007]FIG. 2A through FIG. 2D are cross-sections of aWafer edge during formation of a photolithographic layerstack according to a second embodiment of the instant invention.[0008] FIG. 3 through FIG. 12 depict cross-sections ofWafers With photolithographic layer stacks formed accordingto alternate embodiments of the instant invention.DETAILED DESCRIPTIONintegrated circuits.BACKGROUND OF THE INVENTION[0002] Immersion lithography, in Which a liquid, knoWn asan immersion ?uid, is inserted betWeen the lens and the Wafer,is used to de?ne patterns on some advanced integrated circuits.
Typical immersion photolithography processes use astack of multiple layers of materials, including a bottomanti-re?ection coating, commonly knoWn as BARC, anoptional second BARC layer, a photoresist layer, and a topcoat Which reduces re?ections, and optionally reduces friction betWeen the Wafer and the immersion ?uid during Wafermovement and/or provides a barrier betWeen the immersion[0009] The present invention is described With reference tothe attached ?gures, Wherein like reference numerals are usedthroughout the ?gures to designate similar or equivalent elements.
The ?gures are not draWn to scale and they are provided merely to illustrate the invention. Several aspects of theinvention are described beloW With reference to exampleapplications for illustration. It should be understood thatnumerous speci?c details, relationships, and methods are setforth to provide a full understanding of the invention. Oneskilled in the relevant art, hoWever, Will readily recogniZe thatthe invention can be practiced Without one or more of thespeci?c details or With other methods. In other instances,liquid and the photoresist, sometimes called TARC (top antiWell-knoWn structures or operations are not shoWn in detail tore?ection coating).
These layers are typically applied by spinavoid obscuring the invention. The present invention is notcoating, Which produces an edge bead of layer material at theedge of the Wafer. The edge bead is commonly removed priorto further photolithographic processing to reduce contamination from fragments of edge bead material that detach fromlimited by the illustrated ordering of acts or events, as someacts may occur in different orders and/ or concurrently Withthe Wafer edge and are distributed across the Wafer and on thedance With the present invention.[0010] The need for a process sequence for forming a layered stack of photolithographic materials for immersionphotolithographic processing equipment.
Immersion lithographic processing exacerbates the problem because theimmersion ?uid picks up fragments of layer material as itpasses over the Wafer edge, causing pattern defects and particulate contamination. Thus, edge bead removal (EBR) processes must produce a Well-de?ned edge of the layer stackWith no extraneous layer material on the Wafer. EBR proother acts or events. Furthermore, not all illustrated acts orevents are required to implement a methodology in accorlithography With reduced particulate contamination isaddressed by the instant invention, in Which a bottom antire?ection coating (BARC) layer or layers is formed on aWafer, and a photoresist layer and top coat layer are formedover the BARC stack, by a single step edge bead removalcesses are hampered by adhesion incompatibilities betWeentop coat materials and BARC materials.
Furthermore,(EBR) process.repeated EBR processes can damage BARC layers, resultingin additional particulates.Wafer edge during formation of a photolithographic layerSUMMARY OF THE INVENTION[0003] This Summary is provided to comply With 37 CPR.§l.73, suggesting a summary of the invention brie?y indicating the nature and substance of the invention. It is submittedWith the understanding that it Will not be used to interpret orlimit the scope or meaning of the claims.[0004] The need for a method of forming a layered stack ofphotolithographic materials for immersion lithography Withreduced contamination generation is addressed by the instantinvention, Which provides a novel single step/ single solventedge bead removal (EBR) process on the photoresist and topcoat layers in a layered stack including a bottom anti-re?ec[0011]FIG.
1A through FIG. 1G are cross-sections of astack according to a ?rst embodiment of the instant invention.FIG. 1A depicts a Wafer (100) With an edge region (102)having a radius betWeen 100 and 350 microns. A ?rst BARClayer (104) of a ?rst BARC material is formed on a top surfaceof the Wafer (100), typically by dispensing a measuredamount of ?uid containing the ?rst BARC material diluted bya ?rst solvent onto the Wafer (100) folloWed by spinning theWafer (100) at several hundred to several thousand rpm Whilea portion of the ?rst solvent evaporates from the BARC ?uid,producing the ?rst BARC layer (104) and a ?rst BARC edgebead (106) along the Wafer edge region (102). A compositionof the ?rst BARC material and a thickness of the ?rst BARClayer (104) depends on the particular pattern being formedduring fabrication of an integrated circuit on the Wafer (100),tion coating (BARC) layer or layers, a photoresist layer andand may be substantially organic, With optional light absorbtop coat layer over the BARC stack.[0005] An advantage of the instant invention is a reductioning dye, or may be substantially inorganic.
A thickness of the?rst BARC layer (104) is commonly betWeen 20 and 500in particulate contamination compared to other methods offorming a layered stack of photolitho graphic materials fornanometers.immersion lithography.DESCRIPTION OF THE VIEWS OF THEDRAWING[0006]FIG. 1A through FIG. 1F are cross-sections of aWafer edge during formation of a photolithographic layerstack according to the instant invention[0012] FIG. 1B depicts the Wafer (100) after a ?rst EBRprocess Which removes ?rst BARC material from the edge ofthe Wafer in a ?rst BARC WEE Zone (108). The ?rst EBRprocess is performed so that the ?rst BARC WEE Zone (108)is substantially free of ?rst BARC material. This is advantageous because contamination resulting from ?rst BARCmaterial is reduced.
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