USApp_20090163026 (1063231), страница 3
Текст из файла (страница 3)
After thesecond BARC material is removed from the second BARCWEE Zone (210), the second BARC material in the secondBARC layer (208) may be cross-linked or otherWise modi?edto decrease its solubility in organic and/or aqueous solvents.[0021] FIG. 2C depicts the Wafer (200) after a photoresistlayer (212) is formed on a top surface of the second BARClayer (208), if used, or a top surface of the ?rst BARC layer(204), if no second BARC layer is present. Photoresist mateanother mixture of PGMEA and GBL to perform the singlestep, single solvent photoresist/top coat EBR process.
Furthermore, it is Within the scope of the instant invention to useanother solvent to perform the single step, single solventphotoresist/top coat EBR process. The single step, singlesolvent photoresist/top coat EBR process is performed byspinning the Wafer (200) at 500 to 2000 rpm While dispensingthe solvent at 20 to 200 ml/min onto the Wafer edge (202) for3 to 15 sec, folloWed by spinning the Wafer (200) at 1000 to3000 rpm for 10 to 40 sec at 20 to 30 C to dry the Wafer (200).Use of a single solvent in the photoresist/top coat EBR process is advantageous because it reduces dissolution and liftingof the BARC layer (204). Use of a single solvent is furthermore advantageous because it reduces solvent use and process costs and complexity compared to a dual solvent processusing separate solvents for the top coat material and thephotoresist material.[0023] FIG. 3 through FIG.
12 depict cross-sections ofWafers With photolithographic layer stacks formed accordingto alternate embodiments of the instant invention. In eachrial in the photoresist layer (212) is typically an ampli?edembodiment, properties of Wafers, and photoresists, BARCdeep ultraviolet (DUV) positive-acting photoresist. The phomaterials and top coat materials and their respective layers aretoresist layer (212) is commonly formed by dispensing aas described in reference to FIG. 1A through FIG.
1G.measured amount of the photoresist material diluted by a[0024]photoresist solvent onto the Wafer (200) folloWed by spinning(302), on Which a ?rst BARC layer (304) is formed on a topsurface of the Wafer (300). A ?rst EBR process removes ?rstBARC material from the Wafer edge (302) in a ?rst BARCWEE Zone. A second BARC layer (306) and a ?rst BARCedge bead (308) are formed on a top surface of the ?rst BARCthe Wafer (200) at several hundred to several thousand rpmWhile a portion of the photoresist solvent evaporates from thephotoresist/ solvent mixture.
A photoresist edge bead (214) isformed at the Wafer edge (202). After the photoresist layer(212) is formed on the Wafer (200), the Wafer (200) is baked,commonly at 80 to 150 C for 30 seconds to 60 minutes, toFIG. 3 depicts a Wafer (300) With an edge regionlayer (304) and the top surface of the Wafer (300). No EBRprocess is performed on the second BARC layer (306) andremove a major portion of any remaining photoresist solvent.?rst BARC edge bead (308). A photoresist layer (310) isA thickness of the photoresist layer (212) is commonlyformed on a top surface of the second BARC layer (306). Atop coat layer (312) is formed on a top surface of the photobetWeen 50 and 500 nanometers thick.
A top coat layer (216)is formed on a top surface of the photoresist layer (212). Thetop coat layer (216) may provide an anti-re?ection function,resist layer (310). A single step, single solvent photoresist/topas Well as possibly reducing frictionbetWeen the Wafer and ancoat EBR process removes photoresist material in the photoresist edge bead and top coat material in the top coat edgeimmersion ?uid, used in immersion lithography. The top coatbead from a photoresist / top coat WEE Zone (314), Which islayer (216) may also serve as a diffusion barrier betWeen anWider than the ?rst BARC WEE Zone.immersion ?uid and the photoresist layer (212). The top coatlayer (216) is commonly formed by dispensing a mixture oftop coat material and second solvent onto the Wafer (200) andspinning the Wafer to spread the mixture and evaporate a[0025]FIG.
4 depicts a Wafer (400) With an edge region(402), on Which a ?rst BARC layer (404) is formed on a topsurface of the Wafer (400). A ?rst EBR process removes ?rstBARC material from the Wafer edge (402) in a ?rst BARCWEE Zone. A second BARC layer (406) is formed on a topportion the second solvent. A top coat edge bead (218) isformed at the Wafer edge (202) during this process.[0022] FIG. 2D depicts the Wafer (200) after a single step,single solvent photoresist/top coat EBR process. Photoresistmaterial in the photoresist edge bead (214) and top coatsurface of the ?rst BARC layer (404). A second EBR processremoves second BARC material from the Wafer edge (402) inmaterial in the top coat edge bead (218) are removed from atop surface of the second BARC layer (406) and the topa second BARC WEE Zone, Which is Wider than the ?rstBARC WEE Zone.
A photoresist layer (408) is formed on aUS 2009/0163026 A1Jun. 25, 2009surface of the ?rst BARC layer (404). A top coat layer (410)of the photoresist layer (810). A single step, single solventis formed on a top surface of the photoresist layer (408). Aphotoresist/top coat EBR process removes photoresist matesingle step, single solvent photoresist/top coat EBR processremoves photoresist material in the photoresist edge bead andtop coat material in the top coat edge bead from a photoresist/top coat edge bead from a photoresist/top coat WEE Zone(814), Which is Wider than the ?rst BARC WEE Zone.rial in the photoresist edge bead and top coat material in thetop coat WEE Zone (412), Which is Wider than the ?rst BARC[0030]WEE Zone, but narroWer than the second BARC WEE Zone.(902), on Which a ?rst BARC layer (904) and a ?rst BARCedge bead (906) are formed on a top surface of the Wafer[0026]FIG. 5 depicts a Wafer (500) With an edge region(502), on Which a ?rst BARC layer (504) is formed on a topsurface of the Wafer (500).
A ?rst EBR process removes ?rstBARC material from the Wafer edge (502) in a ?rst BARCWEE Zone. A second BARC layer (506) is formed on a topsurface of the ?rst BARC layer (504). A second EBR processremoves second BARC material from the Wafer edge (502) inFIG. 9 depicts a Wafer (900) With an edge region(900). No EBR process is performed on the ?rst BARC layer(904) and ?rst BARC edge bead (906).
A second BARC layer(908) and a second BARC edge bead (910) are formed on atop surface of the ?rst BARC layer (904). No EBR process isperformed on the second BARC layer (908) and secondBARC edge bead (910). A photoresist layer (912) is formeda second BARC WEE Zone, Which is substantially as Wide ason a top surface of the second BARC layer (908). A top coatthe ?rst BARC WEE Zone. A photoresist layer (508) isformed on a top surface of the second BARC layer (506).
Atop coat layer (510) is formed on a top surface of the photolayer (914) is formed on a top surface of the photoresist layerresist layer (508).A single step, single solvent photoresist/topcoat EBR process removes photoresist material in the photoresist edge bead and top coat material in the top coat edgebead from a photoresist/top coat WEE Zone (512), Which isWider than the ?rst and second BARC WEE Zones.[0027]FIG.
6 depicts a Wafer (600) With an edge region(602), on Which a ?rst BARC layer (604) is formed on a topsurface of the Wafer (600). A ?rst EBR process removes ?rstBARC material from the Wafer edge (602) in a ?rst BARCWEE Zone. A second BARC layer (606) and a ?rst BARCedge bead (608) are formed on a top surface of the ?rst BARC(912). A single step, single solvent photoresist/top coat EBRprocess removes photoresist material in the photoresist edgebead and top coat material in the top coat edge bead from aphotoresist/top coat WEE Zone (916).[0031] FIG. 10 depicts a Wafer (1000) With an edge region(1002), on Which a ?rst BARC layer (1004) is formed on a topsurface of the Wafer (1000).
A ?rst EBR process removes ?rstBARC material from the Wafer edge (1002) in a ?rst BARCWEE Zone. A photoresist layer (1006) is formed on a topsurface of the ?rst BARC layer (1004) and the top surface ofthe Wafer (1000). A top coat layer (1008) is formed on a topsurface of the photoresist layer (1006).
A single step, singlelayer (604) and the top surface of the Wafer (600). No EBRprocess is performed on the second BARC layer (606) andsolvent photoresist/top coat EBR process removes photoresist material in the photoresist edge bead and top coat materialin the top coat edge bead from a photoresist/top coat WEE?rst BARC edge bead (608). A photoresist layer (610) isZone (1010), Which is narroWer than the ?rst BARC WEEformed on a top surface of the second BARC layer (606).
Atop coat layer (612) is formed on a top surface of the photoZone.resist layer (610).A single step, single solvent photoresist/top(1102), on Which a ?rst BARC layer (1104) is formed on a topsurface of the Wafer (1100). A ?rst EBR process removes ?rstBARC material from the Wafer edge (1102) in a ?rst BARCWEE Zone. A photoresist layer (1106) is formed on a topcoat EBR process removes photoresist material in the photoresist edge bead and top coat material in the top coat edgebead from a photoresist/top coat WEE Zone (614), Which isnarroWer than the ?rst BARC WEE Zone.[0028]FIG.
7 depicts a Wafer (700) With an edge region(702), on Which a ?rst BARC layer (704) and a ?rst BARCedge bead (706) are formed on a top surface of the Wafer[0032]FIG. 11 depicts a Wafer (1100) With an edge regionsurface of the ?rst BARC layer (1104) and the top surface ofthe Wafer (1100). A top coat layer (1108) is formed on a topsurface of the photoresist layer (1106). A single step, single(704) and ?rst BARC edge bead (706). A second BARC layersolvent photoresist/top coat EBR process removes photoresist material in the photoresist edge bead and top coat materialin the top coat edge bead from a photoresist/top coat WEE(708) is formed on a top surface of the ?rst BARC layer (704).Zone (1110), Which is Wider than the ?rst BARC WEE Zone.(700). No EBR process is performed on the ?rst BARC layerA ?rst EBR process removes second BARC material from the[0033]Wafer edge (702) in a ?rst BARC WEE Zone.
A photoresistlayer (710) is formed on a top surface of the second BARClayer (708). A top coat layer (712) is formed on a top surface(1202), on Which a ?rst BARC layer (1204) and a ?rst BARCedge bead (1206) are formed on a top surface of the WaferFIG. 12 depicts a Wafer (1200) With an edge region(1200). No EBR process is performed on the ?rst BARC layerof the photoresist layer (710). A single step, single solvent(1204) and ?rst BARC edge bead (1206). A photoresist layerphotoresist/top coat EBR process removes photoresist material in the photoresist edge bead and top coat material in the(1208) is formed on a top surface of the ?rst BARC layer(1204).
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