USApp_20090163026 (1063231), страница 2
Текст из файла (страница 2)
After the ?rst BARC material is removedfrom the ?rst BARC WEE Zone (108), the ?rst BARC mateUS 2009/0163026 A1rial in the ?rst BARC layer (104) may be cross-linked orotherwise modi?ed to decrease its solubility in and/or aqueous organic solvents.[0013]Jun. 25, 2009material in the photoresist edge bead (118) and top coatmaterial in the top coat edge bead (122) are removed from aphotoresist/top coat WEE Zone (124). The single step, singleFIG. 1C depicts the Wafer (100) after an optionalsolvent photoresist/top coat EBR process uses one solvent tosecond BARC layer (110) of a second BARC material isformed on a top surface of the ?rst BARC layer (104), by asimilar process sequence of dispensing a ?uid containing thesecond BARC material and spinning the Wafer (100). A second BARC edge bead (112) is formed at the edge of the Waferremove both the top coat material and the photoresist from thephotoresist/top coat WEE Zone (124).
Materials used for topcoats commonly have poor adhesion to BARC materials or(110) depend on the particular pattern being formed duringWafer substrates, and contribute to particulate contaminationWhen applied directly to BARC materials or Wafer substrates.Thus, removal of top coat material With photoresist during thephotoresist/top coat EBR process is advantageous because itreduces contamination from top coat material detaching fromthe BARC layer (104) or the Wafer edge region (102).
In onefabrication of an integrated circuit on the Wafer (100). Aembodiment, the solvent is propylene glycol monomethylcomposition of the second BARC layer (110) may be substantially organic or substantially inorganic. In one embodiment, the second BARC layer (110) may be a layer of spin-onglass (SOG). A thickness of the second BARC layer (110) isether acetate (PGMEA). In another embodiment, the solvent(100) adjacent to and atop the ?rst BARC edge bead (106).
AsWith the ?rst BARC layer (104), composition of the secondBARC material and a thickness of the second BARC layercommonly between 10 and 200 nanometers.[0014] FIG. 1D depicts the Wafer (100) after a second EBRprocess Which removes second BARC material from the edgeof the Wafer in a second BARC WEE Zone (114).
The secondBARC WEE Zone (114) may have a different Width than the?rst BARC WEE Zone (108). The second EBR process isperformed so that the second BARC WEE Zone (114) issubstantially free of second BARC material. This is advantageous because contamination resulting from second BARCmaterials is reduced. After the second BARC material isremoved from the second BARC WEE Zone (114), the secondBARC material in the second BARC layer (110) may becross-linked or otherWise modi?ed to decrease its solubilityin organic and/or aqueous solvents.[0015] FIG. 1E depicts the Wafer (100) after a photoresistlayer (116) is formed on a top surface of the second BARClayer (110), if used, or a top surface of the ?rst BARC layer(104), if no second BARC layer is present. Photoresist mateis a mixture of 80% PGMEA and 20% gamma-butyrolactone(GBL).
It is Within the scope of the instant invention to useanother mixture of PGMEA and GBL to perform the singlestep, single solvent photoresist/top coat EBR process. Furthermore, it is Within the scope of the instant invention to useanother solvent to perform the single step, single solventphotoresist/top coat EBR process.
The single step, singlesolvent photoresist/top coat EBR process is performed byspinning the Wafer (100) at 500 to 2000 rpm While dispensingthe solvent at 20 to 200 ml/min onto the Wafer edge (102) for3 to 15 sec, folloWed by spinning the Wafer (100) at 1000 to3000 rpm for 10 to 40 sec at 20 to 30 C to dry the Wafer (100).Use of a single solvent in the photoresist/top coat EBR process is advantageous because it reduces dissolution and liftingof the BARC layer (104). Use of a single solvent is furthermore advantageous because it reduces solvent use and process costs and complexity compared to a dual solvent processusing separate solvents for the top coat material and thephotoresist material.[0018] It Will be recogniZed by practitioners of integratedcircuit fabrication that the method disclosed above for formrial in the photoresist layer (116) is typically an ampli?eding a layered stack of photolithographic materials may bedeep ultraviolet (DUV) positive-acting photoresist.
The phoused in dry lithographic processes as Well as immersion lithographic processes to accrue the advantages noted herein.[0019] FIG. 2A through FIG. 2D are cross-sections of atoresist layer (116) is commonly formed by dispensing ameasured amount of the photoresist material diluted by aphotoresist solvent onto the Wafer (100) folloWed by spinningthe Wafer (100) at several hundred to several thousand rpmWhile a portion of the photoresist solvent evaporates from thephotoresist/ solvent mixture. A photoresist edge bead (118) isformed at the Wafer edge (102).
After the photoresist layerWafer edge during formation of a photolithographic layerstack according to a second embodiment of the instant invention. FIG. 2A depicts a Wafer (200) With an edge region (202)having a radius betWeen 100 and 350 microns. A ?rst BARClayer (204) of a ?rst BARC material is formed on a top surface(116) is formed on the Wafer (100), the Wafer (100) is baked,of the Wafer (200), typically by dispensing a measuredcommonly at 80 to 150 C for 30 seconds to 60 minutes, toamount of ?uid containing the ?rst BARC material diluted bya ?rst solvent onto the Wafer (200) folloWed by spinning theWafer (200) at several hundred to several thousand rpm Whilea portion of the ?rst solvent evaporates from the BARC ?uid,producing the ?rst BARC layer (204) and a ?rst BARC edgeremove a major portion of any remaining photoresist solvent.A thickness of the photoresist layer (116) is commonlybetWeen 50 and 500 nanometers thick.[0016] FIG.
1F depicts the Wafer (100) after a top coat layer(120) is formed on a top surface of the photoresist layer (116).The top coat layer may provide an anti-re?ection function, asbead along the Wafer edge region (202). A composition of the?rst BARC material and a thickness of the ?rst BARC layerWell as possibly reducing friction betWeen the Wafer and an(204) depends on the particular pattern being formed duringimmersion ?uid, used in immersion lithography. The top coatfabrication of an integrated circuit on the Wafer (200), andmay also serve as a diffusion barrier betWeen an immersionmay be substantially organic, With optional light absorbing?uid and the photoresist layer (116).
The top coat layer (120)dye, or may be substantially inorganic. A thickness of the ?rstBARC layer (204) is commonly betWeen 20 and 500 nanomis commonly formed by dispensing a mixture of top coatmaterial and second solvent onto the Wafer (100) and spinning the Wafer to spread the mixture and evaporate a portionthe second solvent. A top coat edge bead (122) is formedduring this process.[0017] FIG.
1G depicts the Wafer (100) after a single step,single solvent photoresist/top coat EBR process. Photoresisteters. A ?rst EBR process is performed Which removes ?rstBARC material from the edge of the Wafer in a ?rst BARCWEE Zone (206). The ?rst EBR process is performed so thatthe ?rst BARC WEE Zone (206) is substantially free of ?rstBARC material. This is advantageous because contaminationresulting from ?rst BARC material is reduced. After the ?rstUS 2009/0163026 A1BARC material is removed from the ?rst BARC WEE ZoneJun.
25, 2009photoresist/top coat WEE Zone (220). The single step, single(206), the ?rst BARC material in the ?rst BARC layer (204)solvent photoresist/top coat EBR process uses one solvent tomay be cross-linked or otherwise modi?ed to decrease itsremove both the top coat material and the photoresist from thephotoresist/top coat WEE Zone (220). Materials used for topcoats commonly have poor adhesion to BARC materials orsolubility in and/ or aqueous organic solvents.[0020] FIG. 2B depicts the Wafer (200) after an optionalsecond BARC layer (208) of a second BARC material isformed on a top surface of the ?rst BARC layer (204), by asimilar process sequence of dispensing a ?uid containing thesecond BARC material and spinning the Wafer (200).
A second BARC edge bead is formed at the edge of the Wafer (200).As With the ?rst BARC layer (204), composition of the secWafer substrates, and contribute to particulate contaminationWhen applied directly to BARC materials or Wafer substrates.Thus, removal of top coat material With photoresist during thephotoresist/top coat EBR process is advantageous because itreduces contamination from top coat material detaching fromthe BARC layer (204) or the Wafer edge region (202).
In oneond BARC material and a thickness of the second BARCembodiment, the solvent is propylene glycol monomethyllayer (208) depend on the particular pattern being formedether acetate (PGMEA). In another embodiment, the solventduring fabrication of an integrated circuit on the Wafer (200).is a mixture of 80% PGMEA and 20% gamma-butyrolactone(GBL). It is Within the scope of the instant invention to useA composition of the second BARC layer (208) may besubstantially organic or substantially inorganic. In oneembodiment, the second BARC layer (208) may be a layer ofSOG.
A thickness of the second BARC layer (208) is commonly between 10 and 200 nanometers. A second EBR process is performed Which removes second BARC materialfrom the edge of the Wafer in a second BARC WEE Zone(210). The second BARC WEE Zone (210) may have a different Width than the ?rst BARC WEE Zone (206). The second EBRprocess is performed so that the second BARC WEEZone (210) is substantially free of second BARC material.This is advantageous because particulate contaminationresulting from second BARC material is reduced.
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