USApp_20090163026 (1063231), страница 4
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A top coat layer (1210) is formed on a top surface oftop coat edge bead from a photoresist/top coat WEE Zone(714), Which is narroWer than the ?rst BARC WEE Zone.photoresist/top coat EBR process removes photoresist matethe photoresist layer (1208). A single step, single solventFIG. 8 depicts a Wafer (800) With an edge regionrial in the photoresist edge bead and top coat material in the(802), on Which a ?rst BARC layer (804) and a ?rst BARCedge bead (806) are formed on a top surface of the Wafertop coat edge bead from a photoresist/top coat WEE Zone[0029](1212).(800). No EBR process is performed on the ?rst BARC layer[0034](804) and ?rst BARC edge bead (806).
A second BARC layerIn each embodiment described in reference to FIG.(808) is formed on a top surface of the ?rst BARC layer (804).3 through FIG. 12, removal of top coat material With photoresist during the photoresist/top coat EBR process is advanA ?rst EBR process removes second BARC material from thetageous because it reduces contamination from top coat mateWafer edge (802) in a ?rst BARC WEE Zone.
A photoresistlayer (810) is formed on a top surface of the second BARClayer (808). A top coat layer (812) is formed on a top surfacerial detaching from the BARC layer, second BARC layerand/or the Wafer edge region. Additionally, use of a singlesolvent in the photoresist/top coat EBR process is advantaUS 2009/0163026 A1geous because it reduces dissolution and lifting of the BARClayer and/or second BARC layer. Use of a single solvent isfurthermore advantageous because it reduces solvent use andprocess costs and complexity compared to a dual solventprocess using separate solvents for the top coat material andthe photoresist material.What is claimed is:1. A method of forming a photolithography layer stackcomprising a bottom anti-re?ection coat (BARC) layer, aphotoresist layer and a top coat layer on a semiconductorWafer, by a process comprising the step of performing a singlestep/ single solvent photoresist/top coat edge bead removal(EBR) process on said photoresist layer and said top coatlayer to form a photoresist/top coat Wafer edge exclusionJun.
25, 2009tor Wafer to spread said top coat material over said topsurface of said photoresist layer;performing a single step/ single solvent photoresist/top coatEBR process on said photoresist layer and said top coatlayer to form a photoresist/top coat WEE Zone at an edgeof said semiconductor Wafer.12. The method of claim 10, in Which said single step/single solvent photoresist/top coat EBR process further comprises the steps of:spinning said semiconductor Wafer at 500 to 2000 rpm; anddispensing EBR solvent at 20 to 200 ml/min for 3 to 15 seconto said photoresist layer and said top coat layer at saidedge of said semiconductor Wafer.13.
The method of claim 12, in Which said EBR solvent is(WEE) Zone at an edge of said semiconductor Wafer.propylene glycol monomethyl ether acetate (PGMEA).2. The method of claim 1, in Which said single step/ singlesolvent photoresist/top coat EBR process further comprisesthe steps of:14. The method of claim 12, in Which said EBR solvent isa mixture of 80% PGMEA and 20% gamma-butyrolactonespinning said semiconductor Wafer at 500 to 2000 rpm; anddispensing EBR solvent at 20 to 200 ml/min for 3 to 15 seconto said photoresist layer and said top coat layer at saidedge of said semiconductor Wafer.3.
The method of claim 2, in Which said EBR solvent is(GBL).15. The method of claim 12, further comprising the step ofperforming an EBR process on said BARC layerbefore forming said photoresist layer.16. The method of claim 15, in Which a WEE Zone of saidBARC layer is Wider than said photoresist/top coat WEEpropylene glycol monomethyl ether acetate (PGMEA).Zone.4. The method of claim 2, in Which said EBR solvent is amixture of 80% PGMEA and 20% gamma-butyrolactone17.
The method of claim 15, in Which a WEE Zone of saidBARC layer is narroWer than said photoresist/top coat WEE(GBL).Zone.5. The method of claim 2, further comprising the step ofperforming an EBR process on said BARC layerbefore forming said photoresist layer.6. The method of claim 5, in Which a WEE Zone of saidBARC layer is Wider than said photoresist/top coat WEEZone.7. The method of claim 5, in Which a WEE Zone of saidBARC layer is narroWer than said photoresist/top coat WEEZone.8. The method of claim 2, further comprising the step offorming a layer of spin-on glass (SOG) on a top surface of saidBARC layer.9. The method of claim 8, further comprising the step ofperforming an EBR process on said layer of SOG beforeforming said photoresist layer.10.
The method of claim 9, in Which a WEE Zone of saidlayer of SOG is different from said WEE Zone of said BARClayer.11. A method of performing immersion lithography on asemiconductor Wafer comprising the steps of:18. The method of claim 12, further comprising the step offorming a layer of SOG on a top surface of said BARC layer.19. The method of claim 18, further comprising the step ofperforming an EBR process on said layer of SOG beforeforming said photoresist layer.20. The method of claim 19, in Which a WEE Zone of saidlayer of SOG is different from said WEE Zone of said BARClayer.21.
A method of forming an integrated circuit on a semiconductor Wafer comprising the steps of:forming a BARC layer on a top surface of said semiconductor Wafer by dispensing BARC material on a topsurface of said semiconductor Wafer and spinning saidsemiconductor Wafer to spread said BARC material oversaid top surface of said semiconductor Wafer;forming a photoresist layer on a top surface of said BARClayer a process further comprising the steps of:dispensing a mixture of photoresist and a solvent on saidtop surface of said BARC layer;surface of said semiconductor Wafer and spinning saidspinning said semiconductor Wafer at 200 to 10,000 rpmto spread said mixture of photoresist and said solventover said top surface of said BARC layer; andsemiconductor Wafer to spread said BARC material overbaking said semiconductor Wafer to further remove aforming a BARC layer on a top surface of said semiconductor Wafer by dispensing BARC material on a topsaid top surface of said semiconductor Wafer;forming a photoresist layer on a top surface of said BARClayer a process further comprising the steps of:dispensing a mixture of photoresist and a solvent on saidtop surface of said BARC layer;second portion of said solvent;forming a top coat layer on a top surface of said photoresistlayer by dispensing top coat material on said top surfaceof said photoresist layer and spinning said semiconductor Wafer to spread said top coat material over said topspinning said semiconductor Wafer at 200 to 10,000 rpmto spread said mixture of photoresist and said solventover said top surface of said BARC layer; andsurface of said photoresist layer;performing a single step/ single solvent photoresist/top coatbaking said semiconductor Wafer to further remove alayer to form a photoresist/top coat WEE Zone at an edgesecond portion of said solvent;forming a top coat layer on a top surface of said photoresistlayer by dispensing top coat material on said top surfaceof said photoresist layer and spinning said semiconducEBR process on said photoresist layer and said top coatof said semiconductor Wafer.22.
The method of claim 21, in Which said single step/single solvent photoresist/top coat EBR process further comprises the steps of:US 2009/0163026 A1spinning said semiconductor Wafer at 500 to 2000 rpm; anddispensing EBR solvent at 20 to 200 ml/min for 3 to 15 seconto said photoresist layer and said top coat layer at saidedge of said semiconductor Wafer.23. The method of claim 22, in Which said EBR solvent isPGMEA.24. The method of claim 22, in Which said EBR solvent isa mixture of 80% PGMEA and 20% GBL.25. The method of claim 22, further comprising the step ofJun.
25, 200926. The method of claim 25, in Which a WEE Zone of saidBARC layer is Wider than said photoresist/top coat WEEZone.26. The method of claim 25, in Which a WEE Zone of saidBARC layer is narroWer than said photoresist/top coat WEEZone.28. The method of claim 22, further comprising the stepsof: forming a layer of SOG on a top surface of said BARClayer; and performing an EBR process on said layer of SOGbefore forming said photoresist layer.performing an EBR process on said BARC layerbefore forming said photoresist layer.*****.
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