USp_6516815 (1063235)
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US006516815B1(12)United States Patent(10) Patent N0.:(45) Date of Patent:Stevens et al.(54)EDGE BEAD REMOVAL/ SPIN RINSE DRYFeb. 11,2003OTHER PUBLICATIONS(EBR/SRD) MODULESernitool©, Inc., “MetalliZation & Interconnect,” 1998, 4pages.(75) Inventors: Joe Stevens, San Jose, CA (US);Laurell Technologies Corporation, “TWo control con?guraDonald Olgado, Palo Alto, CA (US);AleX K0, Sunnyvale, CA (US);tions available—see WS 400 OR WS-400Lite.” Oct. 19, 1998,Yeuk-Fai Edwin Mok, San Francisco,CA (US)(73) Assignee: Applied Materials, Inc., Santa Clara,CA (US)Notice:US 6,516,815 B1Subject to any disclaimer, the term of thispatent is extended or adjusted under 356 pages.PCT International Search Report from PCT/US 99/27855,Dated Mar. 27, 200.R.
J. Censak, et al., IBM Technical Disclosure Bulletin,“Spin Basket,” vol. 18, No. 8, Jan. 1976, pp. 2476—2477.Peter Singer, Semiconductor International “Wafer Processing,” Jun. 1998, p. 70.Lucio Colombo, “Wafer Back Surface Film Removal,”Central R&D, SGS—Thomson Microelectronics, Agrate,U.S.C. 154(b) by 0 days.Italy.Verteq Online, “Products Overview” WWW.verteq.com.Peter Singer, Semiconductor International, “Tantalum, Cop(21) Appl. No.: 09/350,212Jul. 9, 1999(22) Filed:per and Damascene: The Future of Interconnects,” Jun.1998.(51)Int. Cl.7 ................................................ ..
B08B 3/02(52)Primary Examiner—Frankie L. Stinson(74) Attorney, Agent, or Firm—Moser, Patterson &US. Cl. ...................... .. 134/25.4; 134/33; 134/147;Sheridan134/153; 134/902(58)Field of Search ............................... .. 134/147, 153,134/902, 94.1, 95.3, 99.1, 103.2, 25.4,33U.S. PATENT DOCUMENTS3,727,620 A3,770,598 A3,772,105 A3,953,265 A4/1973*Orr ........................... ..134/9511/1973CreutZ ....................
.. 204/52 R11/1973Shipley ..................... .. 156/194/1976 Hood(List continued on neXt page.)FOREIGN PATENT DOCUMENTS41 O9 95542 O2 1942 623 1341-31693610/19927/199311/198712/1989ABSTRACTThe present invention provides an apparatus for etching asubstrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to thesubstrate support; and a ?uid delivery assembly disposed inReferences Cited(56)(57)....... ..HO1L/21/306.......... ..B44D/3/16........... ..B44C/1/26....... ..(List continued on neXt page.)the container to deliver an etchant to a peripheral portion ofa substrate disposed on the substrate support. Preferably, thesubstrate support comprises a vacuum chuck and the ?uiddelivery assembly comprises one or more noZZles.
Theinvention also provide a method for etching a substrate,comprising: rotating a substrate positioned on a rotatablesubstrate support; and delivering an etchant to a peripheralportion of the substrate. Preferably, the substrate is rotated atbetWeen about 100 rpm and about 1000 rpm, and the etchantis delivered in a direction that is substantially tangent to theperipheral portion of the substrate at an incident anglebetWeen about 0 degrees and about 45 degrees from asurface of substrate.HO1L/21/30650 Claims, 4 Drawing SheetsUS 6,516,815 B1Page 2U.S. PATENT DOCUMENTS3,990,462 A4,027,686 A4,092,176 A4,110,176 A4,113,492 A4,315,059 A4,326,940 A4,336,114 A4,376,685 A4,405,416 A4,429,983 A4,435,266 A4,439,243 A4,439,244 A4,489,740 A4,510,176 A4,518,678 A4,519,846 A4,633,804 A4,688,918 A4,693,805 A4,732,785 A4,788,994 A4,838,289 A5,039,381 A5,055,425 A5,092,975 A5,155,336 A5,162,260 A5,176,783 A5,222,310 A5,224,504 A5,230,743 AA5,252,807 A5,256,2745,259,407 A5,290,361 A5,316,974 A5,328,589 AA5,349,978 A5,351,3605,368,711 A5,377,708 A* 11/1976 El?mann 9t a1~6/1977 Shortcs er a15/1978K9191 9t a1~ ---- 134/1868/1978 CreutZ et a1.
... 204/52 R96/67-- 429/112-- 204/232- 204/52 R204/52 R............ .. 204/689/1978 Sato er a12/1982 Raistrick er a14/1982 Eckles er a1- 6/1982 Mayer et a1- -3/1983 Watson ....... ..9/1983 Raistrick et a1.**5/1995 Kloiber et a1. ............ .. 427/2429/19951/19965,608,943 A3/1997 Konishi et a1.5,625,170 A4/1997Poris ........... ..Tomita et al'Sellers ................ ..
204/192.13Bunkofske ..427/240Drummond et a1. . 204/192.12Poris ........................ .. 204/231Wong et al'Lo et aL5,634,9805,651,8655,705,2235,718,8135,723,0285,753,1335,783,0972/1984 Cortellino er 913/1984 J0hnst0n ................... .. 204/2763/1984 Tltus3/198412/1984* 4/19855/19855,415,890 A5,447,615 A5,482,174 AAllevato .................... .. 134/33Rattan et a1. ............. .. 134/140Cuthbert er 91Allen ....................... .. 430/311**5,879,577 A5,897,379 A5,939,139 A***3/1999 Weng et al.4/1999 Ulrich et al'8/1999 Fujimoto et al.59762675,997,6536,017,4376,019,843* 11/1999 Culkins et al'* 12/1999 Yamasaka et aL1/2000 Ting et a1.
.................. .. 205/80* Z/ZOOO Park et al'5/1985 AigO ......................... .. 134/156,062,288 A1/1987 Arii6,063,232 A*8/1987 51111119 81 91-6,114,254 A9/1987 QuaZi .................. .. 204/192.223/1988 Brewer ..................... ..
427/2406,117,778 A *6,254,760 B1g/ZOOO Jones et al'7/2001 Shen et aL6,258,220 B16,261,433 B16,290,865 B17/2001 Dordi et al.7/2001 Landau9/2001 Lloyd et aL* 12/1988 Shinbara* 6/1989 Kottman er 918/1991 Mullarkey ..... ..204/47.510/1991 Leibovitz er a13/1992 Yamamura et a1.-- 437/195.. 204/19810/1992 Gronet et a1.. 219/41111/1992 Le1b0vitZ et a1 ..........
.. 437/195* 1/1993 Yoshlkawa6/1993 Thompson et a1. .7/1993Thompson et a1.7/1993 Thompson et a1.10/1993.34/202Chizinsky ................. .. 219/39010/1993 Poris. """"" "11/1993 Tuchrda et a1. ........... .. 134/1513/1994 Hayashida et a1. .......... ..5/1994 Crank7/1994 Martin" 2050969/1994 Sago et 51' """"""""" "134/153* 10/1994 Suzuki et ‘a 1'"""""""" "11/1994*5/2000 Tateyama5/2000*6,309,981 B1Poris ........................ .. 204/1931/1995 Bergman et a1. .......... .. 134/105Terasawa et a1. ......... ..
156/3459/2000 Rolfson10/2001 Mayer et a1. ............. .. 438/754FOREIGN PATENT DOCUMENTSJP2253620* “V1990JP2-272738* 11/1990JP3 220723JP5433221/ 1993.. 134/155...... .. 134/32177/506/19977/19971/19982/19983/19985/19987/1998*_15/302.AAAAAAAAAAA*Ishida .................. .. 204/224 RNamiki et a1. .............. ..
216/419/1991*HO1L/21/3O6"""" "JP05 1601046/1993""""" " Hon/21506JP060172911/1994.......... .. C25D/7/12JP4060971364/1994....... ..JPJPJP642488709017768080371435/19946/19952/1996....... .. HO1L/21/027*H01L/21/304....... .. H01L/21/306W0WO 99/259045/1991C25D/5/02W0W0 97/120794/1997.......... ..
C25D/5/02W0WO 99/259035/1999""""" " (2513/5/00* cited by examinerU.S. PatentFeb. 11,2003Sheet 2 of4US 6,516,815 B1U.S. PatentFeb. 11,2003Sheet 3 of4US 6,516,815 B1Fig. 4150122aFig. 5U.S. PatentFeb. 11,2003wmrwt03mm?Sheet 4 of4US 6,516,815 B1US 6,516,815 B112EDGE BEAD REMOVAL/ SPIN RINSE DRYgenerally comprises physical vapor depositing a barrier(EBR/SRD) MODULElayer over the feature surfaces, physical vapor depositing aconductive metal seed layer, preferably copper, over thebarrier layer, and then electroplating a conductive metal overthe seed layer to ?ll the structure/feature.
Finally, the deposited layers and the dielectric layers are planariZed, such as byBACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to an electro-chemical deposition or electroplating apparatus. More particularly, theinvention relates to an apparatus for removing depositionchemical mechanical polishing (CMP), to de?ne a conductive interconnect feature.FIG.
1 is a cross sectional vieW of a simpli?ed typical10from a peripheral portion of a substrate.2. Background of the Related ArtSub-quarter micron, multi-level metalliZation is one of thekey technologies for the neXt generation of ultra large scaleintegration (ULSI). The multilevel interconnects that lie atthe heart of this technology require planariZation of interconnect features formed in high aspect ratio apertures,including contacts, vias, lines and other features. Reliablefountain plater 10 incorporating contact pins. Generally, thefountain plater 10 includes an electrolyte container 12having a top opening, a substrate holder 14 disposed abovethe electrolyte container 12, an anode 16 disposed at abottom portion of the electrolyte container 12 and a contact15ring 20 contacting the substrate 22.
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