USp_6516815 (1063235), страница 4
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TheWafer is preferably rotated betWeen about 100 rpm to about1000 rpm, more preferably betWeen about 500 rpm andabout 700 rpm. The effective etch rate (i.e., the amount of150 deliver the etchant onto the peripheral portion of theWafer 122. The etching process is performed for a preand loWer surfaces of the Wafer, to perform an edge beadremoval process. Preferably, the deioniZed Water noZZle 172delivers deioniZed Water to the central portion of the Waferduring the edge bead removal process to prevent unintendedetching by the etchant that has splashed onto a centralportion of the Wafer surface.
For a spin-rinse-dry process,preferably all of the noZZles 150, 170 and 172 deliverstransferred out of the EBR/SRD module 200 for furtherprocessing.55eters can be varied to achieve particular desired results.lift 130 lifts the Wafer off of a transfer robot blade. The robotblade retracts and the Wafer lift 130 loWers the Wafer ontothe vacuum chuck 124. The vacuum system is activated tosecure the Wafer 122 thereon, and the Wafer holder assembly104 With the Wafer disposed thereon is rotated as the noZZlesto the peripheral portion of the Wafer, including the upperthe Wafer has been rinsed, the Wafer is spun dry andetchant contacting the Wafer edge, the temperature of theetchant, and the velocity of the Wafer rotation. These paramIn operation, a Wafer 122 is positioned above the Waferholder assembly 104 of the BER module 100, and the WaferThe EBR/SRD module 200 preferably also include a dedicated deioniZed Water noZZle 172 disposed to deliver deioniZed Water to a central portion of the upper surface of theWafer.In operation, the noZZles 150 and 170 deliver an etchantdeioniZed Water to rinse the Wafer as the Wafer rotates.
Aftercopper removed divided by the time required for removal) isa function of the etch rate of the etchant, the velocity of theare directed to deliver ?uids to a peripheral portion of thebackside of the Wafer. The loWer noZZles 170 are preferablydisposed at positions that do not interfere With the movement of the Wafer lift 130. The loWer noZZle 170 can also beWhile the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised Without departingfrom the basic scope thereof, and the scope thereof isdetermined by the claims that folloW.What is claimed is:1. An apparatus for etching a substrate, comprising:60a container;a substrate support disposed in the container;a rotation actuator attached to the substrate support;a ?uid delivery assembly disposed in the container todeliver an etchant to a peripheral portion of a substrate65disposed on the substrate support, Wherein the ?uiddelivery assembly comprises one or more anglednoZZles; andUS 6,516,815 B18718.
The apparatus of claim 15 Wherein the ?uid deliverya substrate lift assembly disposed in the container comprising a lift platform and a plurality of arms extendingsystem is selectively connected betWeen an etchant sourceradially from the lift platform.and a deioniZed Water source.2. The apparatus of claim 1 Wherein the substrate support19. The apparatus of claim 15 Wherein the at least oneangled noZZle comprises a ?rst set of angled noZZles concomprises a vacuum chuck.3. The apparatus of claim 1 Wherein the one or morenectable to an etchant source and a second set of angledangled noZZles deliver the etchant to the peripheral portionnoZZles connectable to a deioniZed Water source.20.
The apparatus of claim 15 further comprising aof the substrate at an angle of incidence less than about 45degrees.4. The apparatus of claim 3 Wherein the one or moreangled noZZles deliver the etchant to a peripheral portion ofdeioniZed Water noZZle to deliver deioniZed Water to a10central portion of the substrate.21. The apparatus of claim 15 Wherein the at least onethe substrate at an angle of incidence betWeen about 10 andangled noZZle delivers the etchant to a peripheral portion ofabout 30 degrees.5.
The apparatus of claim 1 Wherein the ?uid deliverythe substrate at an angle of incidence betWeen about 10 andabout 30 degrees.22. An apparatus for etching a substrate, comprising:system is selectively connected betWeen an etchant sourceand a deioniZed Water source.156. The apparatus of claim 1 Wherein the one or morean enclosure having a substrate support and a rotationactuator attached to the substrate support;angled noZZles comprises a ?rst set of noZZles connectablea delivery assembly comprising at least one noZZle toto an etchant source and a second set of noZZles connectabledeliver a ?uid to a peripheral edge of a substrate at anto a deioniZed Water source.7.
The apparatus of claim 1 further comprising a deioniZed Water noZZle disposed in the container to deliverdeioniZed Water to a central portion of the substrate.8. The apparatus of claim 1 Wherein the substrate lift20radially from the lift platform.23. The apparatus of claim 22, Wherein the deliveryassembly comprises a plurality of clips disposed at distalends of the arms.25deioniZed Water source.24. The apparatus of claim 23, Wherein the second ?uidsource comprises deioniZed Water.30and26. The apparatus of claim 23, Wherein the deliveryassembly comprises at least one pair of vertically alignednoZZles.35spin drying the substrate.10.
The method of claim 9 Wherein the substrate is rotatedat betWeen about 100 rpm and about 1000 rpm.11. The method of claim 9 Wherein the etchant is delivered40in a direction that is substantially tangent to the peripheralportion of the substrate.12. The method of claim 9 Wherein the etchant is delivered to a surface of the substrate at an angle of incidence lessthan about 45 degrees.25.
The apparatus of claim 23, Wherein the ?rst ?uidsource comprises an etchant.delivering an etchant to a peripheral portion of the substrate utiliZing a ?uid delivery assembly having one ormore angled noZZles;delivering a rinsing agent to the substrate after etching;assembly comprises a ?rst set of noZZles connectable to anetchant source and a second set of noZZles connectable to a9.
A method for etching a substrate, comprising:rotating a substrate utiliZing a rotatable substrate supportcomprising a substrate lift assembly having a lift platform and a plurality of arms extending radially from thelift platform;angle of incidence of less than about 45 degrees; anda substrate lift assembly disposed in the enclosure comprising a lift platform and a plurality of arms extending4513. The method of claim 9 Wherein the etchant is delivered to a front side and a back side of the substrate.27. The apparatus of claim 22, Wherein the ?uid deliveryassembly delivers the ?uid to an upper peripheral edge of thesubstrate.28.
The apparatus of claim 22, Wherein the ?uid deliveryassembly delivers the ?uid to a loWer peripheral edge of thesubstrate.29. The apparatus of claim 22, Wherein the ?uid deliveryassembly delivers the ?uid to upper and loWer peripheraledges of the substrate.30. The apparatus of claim 22, further comprising meansfor spin drying the substrate.31. The apparatus of claim 22, Wherein the substrate isrotated during the delivery of the ?uid.32. The apparatus of claim 22 Wherein the at least one14. The method of claim 9 further comprising deliveringnoZZle delivers the ?uid to a peripheral edge of the substratedeioniZed Water to a central portion of the substrate.15.
An apparatus for delivering an etchant to a peripheral 50 at an angle of incidence betWeen about 10 and about 30degrees.edge of a substrate, comprising:33. An apparatus for etching a substrate, comprising:an enclosure having a substrate support and a rotationactuator attached to the substrate support;a ?uid delivery assembly comprising at least one anglednoZZle disposed about a peripheral edge of the substrate; andmeans for supporting a substrate;means for lifting the substrate, Wherein the means for55lifting comprises a lift platform and a plurality of armsextending radially from the lift platform;means for rotating the substrate; anda delivery assembly for delivering a ?uid to a peripherala substrate lift assembly connected to the substratesupport, Wherein the substrate lift assembly comprisesa plurality of arms extending radially from a lift platform and a plurality of clips disposed at distal ends ofedge of a substrate disposed on the means for supportthe arms.at least one pair of noZZles connectable to a ?rst ?uidsource and at least one pair of noZZles connectable to asecond ?uid source.ing a substrate, Wherein the delivery system comprises16.
The apparatus of claim 15 Wherein the substratesupport comprises a vacuum chuck.17. The apparatus of claim 15 Wherein the at least oneangled noZZle delivers the etchant to a peripheral portion ofthe substrate at an angle of incidence less than about 45degrees.34. The apparatus of claim 33, further comprising meansm5for spin drying the substrate.35. The apparatus of claim 33, Wherein the ?rst ?uidsource comprises an etchant.US 6,516,815 B191036. The apparatus of claim 33, wherein the second ?uida delivery assembly for delivering a ?uid to a peripheraledge of a substrate disposed on the substrate support,Wherein the delivery system comprises a ?rst set ofangled noZZles disposed above an upper surface of thesubstrate and a second set of angled noZZles disposedbeloW a loWer surface of the substrate; anda substrate lift assembly disposed in the enclosure comprising a lift platform and a plurality of arms extendingsource comprises deionized Water.37.
The apparatus of claim 33, Wherein the ?uid isdelivered to an upper and loWer surface of the substrate at anangle of incidence less than about 45 degrees.38. The apparatus of claim 33, Wherein the ?uid isdelivered in the direction of the rotation of the substrate.39. The apparatus of claim 33, Wherein the ?uid isradially from the lift platform.delivered to an upper surface of the substrate at an angle of46. The apparatus of claim 42, Wherein the ?rst andincidence less than about 45 degrees.40. The apparatus of claim 33, Wherein the noZZles ofsecond set of angled noZZles are each connectable to a ?rst?uid source, a second ?uid source, or both ?uid sources.each pair are vertically aligned.47.