USp_6516815 (1063235), страница 3
Текст из файла (страница 3)
TheSo that the manner in Which the above recited features,advantages and objects of the present invention are attainedand can be understood in detail, a more particular descrip35spin-rinse-dry process. The spider clip assembly comprisesby reference to the embodiments thereof Which are illusillustrate only typical embodiments of this invention and aretherefore not to be considered limiting of its scope, for theinvention may admit to other equally effective embodiWafer lift 130, as shoWn in FIG. 3, comprises a spider clipassembly that also can be used to secure a Wafer during ation of the invention, brie?y summarized above, may be hadtrated in the appended draWings.It is to be noted, hoWever, that the appended draWingschuck surface to seal the vacuum chuck 124 from the ?uidsa plurality of arms 134 extending from an annular base 136and a spider clip 138 pivotally disposed at the distal end of40the arm 134.
The annular base 136 includes a doWnWardlyextending Wall 137 that overlaps the upturned inner Wall 114to contain ?uids used during processing inside the container102. The spider clip 138 includes an upper surface 140 forments.receiving the Wafer, a clamp portion 142 for clamping theFIG. 1 is a cross sectional vieW of a simpli?ed typical 45 Wafer, and a loWer portion 144 that causes the clamp portionfountain plater 10 incorporating contact pins.shoWing excess deposition 36 at the edge 32 of the seed142 to engage the edge of the Wafer due to centrifugal forceWhen the Wafer holder assembly is rotated. Alternatively, theWafer lift 130 comprises commonly used Wafer lifts inlayer 34.various Wafer processing apparatus, such as a set of lift pinsFIG.
2 is a cross sectional vieW of an edge of an Wafer 30FIG. 3 is a side cross sectional vieW of an edge bead 50 or a lift hoop disposed on a lift platform or lift ring in oraround the vacuum chuck body.removal (EBR) module of the present invention shoWing aThe ?uid/chemical delivery assembly 106 comprises onesubstrate disposed in a processing position for removingexcess deposition from the edge of the substrate.or more noZZles 150 disposed on one or more dispense arms152.
The dispense arm 152 extends through the containerFIG. 4 is a top schematic vieW of an EBR moduleillustrating one embodiment of the noZZle positions for edge55bead removal.FIG. 5 is a side vieW of a noZZle 150 disposed in relationto a Wafer 122 being processed.substrate 122. By having an extendable dispense arm 152,60the noZZle can be positioned over the Wafer to point thenoZZle from an interior portion of the Wafer toWard the edgeof the Wafer, Which enhances the control over the delivery of65pense arm 152 is ?xedly attached to the container sideWall108, and the noZZle 150 is secured to the dispense arm in aposition that does not interfere With vertical Wafer movement in the container 102.FIG. 6 is a cross sectional vieW of a combined edge beadremoval/spin-rinse-dry (EBR/SRD) module shoWing a substrate in a processing position vertically disposed betWeenthe etchant/?uids to the Wafer edge.
Alternatively, the dis?uid inlets.DETAILED DESCRIPTION OF THEPREFERRED EMBODIMENTsideWall 108 and is attached to an actuator 154 that extendsand retracts to vary the position of the noZZle 150 over theFIG. 3 is a side cross sectional vieW of an edge beadPreferably, the dispense arm 152 includes one or moreremoval (EBR) module of the present invention shoWing aconduits extending through the dispense arm for connectingUS 6,516,815 B156the nozzle 150 to an etchant source. Avariety of etchants aredetermined time period sufficient to remove the excessWell known in the art for removing deposited metal from asubstrate, such as nitric acid and other acids availablepreferably cleaned utiliZing deioniZed Water in a spin-rinsedeposition on the Wafer edge (i.e., edge bead).
The Wafer iscommercially. Alternatively, the noZZle 150 is connectedthrough a ?exible tubing 156 disposed through the conduitdry process. The spin-rinse-dry process typically involvesin the dispense arm 152. Preferably, the noZZles 150 areetchant from the Wafer and spining the Wafer at a high speedto dry the Wafer. The Wafer is then transferred out of theBER module 100 after the edge bead removal process andthe spin-rinse-dry process, and the Wafer is ready for otherdelivering deioniZed Water to the Wafer to rinse residualdisposed in a paired arrangement at positions above andbeloW the Wafer to deliver ?uids/chemicals to the upper edgesurface and the loWer edge surface of the Wafer, respectively.The noZZles 150 can be selectively connected to one or more 10 processes, such as a thermal anneal treatment and otherWafer processing.chemical/?uid sources, such as a deioniZed Water source 160FIG.
6 is a cross sectional vieW of a combined edge beadand an etchant source 162, and a computer control 164removal/spin-rinse-dry (EBR/SRD) module shoWing a subsWitches the connection betWeen the one or more ?uid/strate in a processing position vertically disposed betWeenchemical sources according to a desired program.Alternatively, a ?rst set of noZZles are connected to the 15 ?uid inlets. This embodiment of the invention is useful forboth edge bead removal (BER) and spin-rinse-dry (SRD)deioniZed Water source and a second set of noZZles areprocesses. The components of the EBR/SRD module 200 areconnected to the etchant source, and the noZZles are selectively activated to provide ?uids to the Wafer.Preferably, the noZZles 150 are disposed at an angled toprovide ?uids near a peripheral portion of the Wafer at a20substantially tangential direction.
FIG. 4 is a top schematicvieW of an EBR module illustrating one embodiment of thesimilar to the components of the BER module 100 describedabove, and the same components are indicated by the samenumbers. In addition to the components of the BER module100, the EBR/SRD module 200 comprises an additional setof loWer noZZles 170 disposed at a position beloW the Wafer,preferably vertically aligned correspondingly to the posinoZZle positions for edge bead removal. As shoWn, threenoZZles 150 are disposed substantially evenly spaced abouttions of noZZles 150. The loWer noZZles 170 are selectivelyconnected to a deioniZed Water source 160 and an etchantan interior surface of the container sideWall 108.
Each 25source 162, and the ?uid delivered by the noZZles 170 isnoZZle 150 is disposed to provide ?uids to an edge portionof the Wafer and is positioned to provide sufficient space toalloW vertical Wafer movement betWeen a processing position and a transfer position. Preferably, the ?uid delivery orspray pattern is controlled by the shape of the noZZle and thecontrolled by the controller 164.
Preferably, the noZZles 17030?uid pressure to limit ?uid delivery to a selected edgeexclusion range. For example, the etchant is restricted to anattached to an actuator 174 through an arm 176 that retractsand extends to position the noZZles 170 at desired locations.outer 3 mm annular portion of the Wafer to achieve 3 mmAlternatively, the Wafer lift 130 is not rotated during processing to prevent interference With the loWer noZZles 170.edge exclusion. The noZZles are positioned to provide theetchant at an angle of incidence to the surface of the Waferthat controls splashing of the etchant as the etchant comesinto contact With the Wafer.
FIG. 5 is a side vieW of a noZZle150 disposed in relation to a Wafer 122 being processed.Preferably, the angle of incidence, 0t, of the etchant to theWafer is betWeen about 0 degrees and about 45 degrees,more preferably betWeen about 10 degrees and about 303540degrees.The Wafer 122 is rotated during the edge bead removalprocess to provide substantially equal exposure to theetchant at the peripheral portion of the Wafer. Preferably, the45Wafer 122 is rotated in the same direction as the direction ofthe etchant spray pattern to facilitate controlled edge beadremoval. For example, as shoWn in FIG. 4, the Wafer isrotated in a counterclockwise direction (arroW A) Whichcorresponds to the counter-clockWise spray pattern.
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