USP_6423650 (1063529), страница 4
Текст из файла (страница 4)
The method of claim 10, Wherein the underlyingsubstrate comprises at least one of a metal, a metal alloy, anoxynitride, a nitride, and a silicide.13. The method of claim 10, Wherein the plasma comprises at least one of a chlorine containing plasma, a ?uorinereference to a “means”) used to describe such componentsare intended to correspond, unless otherWise indicated, toeven though not structurally equivalent to the disclosedstructure Which performs the function in the herein illustrated exemplary embodiments of the invention.
In addition,While a particular feature of the invention may have beendisclosed With respect to only one of several embodiments,contacting a plasma With the upper surface of the underlying substrate so as to roughen the upper surface; anddepositing the ultra-thin photoresist on the roughenedupper surface of the underlying substrate, Wherein theusing the patterned ultra-thin photoresist.annexed draWings. In particular regard to the various functions performed by the above described components7513.8. The method of claim 1, Wherein the upper surface of thesemiconductor substrate has an rtm of about 10 A to aboutsubstrate 14A is exhibited in all areas of the semiconductorductor device 10 processing, and photoresist stripping.
Thestrong adhesion is maintained during semiconductor device10 processing such as etching steps and depositing steps6. The method of claim 1 further comprising irradiatingthe ultra-thin photoresist With electromagnetic radiationhaving a Wavelength of about 25 nm or less.5517. The method of claim 10, Wherein the roughened uppersurface of the underlying substrate has an rim of about 10 Ato about 75A.18. The method of claim 10, Wherein the roughened uppersurface of the underlying substrate has an rim of about 10 Ato about 50A.19.
The method of claim 10, Wherein the ultra-thinphotoresist has a thickness from about 500 A to about150013..
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