USP_6423650 (1063529), страница 2
Текст из файла (страница 2)
In addition tothose mentioned above, dielectric materials include loW Kpolymer materials and various oxides. LoW K polymermaterials include polyimides, ?uorinated polyimides,an rtm of about 10 A or more. Although the temperature10polysilsequioxane, benZocyclobutene (BCB), parlene F, parlene N and amorphous polytetra?uoroethylene. A speci?cexample of a commercially available loW K polymer material is FlareTM from AlliedSignal believed to be derived fromper?uorobiphenyl and aromatic bisphenols. Oxides includesilicon dioxide, ?uorine doped silicon glass (FSG), tetra15ethylorthosilicate (TEOS), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), and any other suitablespin-on glass,Prior to depositing an ultra-thin photoresist on the20substrate, the upper surface of the substrate (the surfaceplasma, the ?oW rate, the time of contact and thetemperature, in one embodiment, the pressure at Which thesubstrate is contacted With the plasma is from about 1 mtorrto about 1,000 torr.
In another embodiment, the pressure atWhich the substrate is contacted With the plasma is fromroughened to promote adhesion betWeen the substrate andthe ultra-thin photoresist. The roughening treatment,hoWever, must not deleteriously effect or damage the substrate. The substrate surface is roughened using either aplasma or an acid solution.Plasmas that are effective for roughening substrate surabout 5 mtorr to about 800 torr.Acid solutions that are effective for roughening substratesurfaces include at least one organic acid or inorganic acid.Acid solutions are typically dilute aqueous solutions of onefaces include chlorine containing plasmas, ?uorine containing plasmas, bromine containing plasmas, oxygen containing plasmas and argon containing plasmas.
The plasma mayor more of CH3CO2H, H3PO4, HNO3, HF, HBr, and HCl,including buffered HF, HBr, and HCl. In one embodiment,optionally further contain an inert gas. Inert gases includenoble gases, hydrogen and nitrogen. Nobles gases includeHBr, HCI, Ar, 02, SP6, NF3, CF4, C4H8, CZF6 and CHF3. Inthe acid solution contains from about 0.001% to about 10%35by Weight of the acid and the remaining portion Water,40buffers, and other additives.
In another embodiment, the acidsolution contains from about 0.01% to about 2% by Weightof the acid and the remaining portion Water, buffers, andother additives. In yet another embodiment, the acid solutioncontains from about 0.05% to about 1% by Weight of thepreferred embodiments, plasmas are employed When thesubstrate is a metal, metal alloy, oxynitride, nitride, orsilicide.Rm is the mean of the maximum peak-to-valley verticalmeasurement from each of ?ve consecutive samplingmeasurements, and can be measured using knoWn techniques including using one of an atomic force microscopeand a scanning electron microscope.
A rough surface ischaracteriZed by a “mountainous” features (numerous peaksand valleys) and/or dendritic features.acid and the remaining portion Water, buffers, and otheradditives. In preferred embodiments, acid solutions areemployed When the substrate is an oxide, a loW K polymer45In one embodiment, the substrate is contacted With aplasma for a time suf?cient to roughen the surface so that thesurface has an rtm of about 10 A or more. Although the timevaries primarily depending upon the identity of the substrateand the plasma, the How rate, the temperature and pressure,5055embodiment, the substrate is contacted With the plasma fromabout 2 seconds to about 30 seconds.
In this connection, thetime is generally longer for substrates containing uppersurfaces of metal compared to substrates containing upper60primarily depending upon the identity of the substrate and(including all active and/or active and inert components)10° C. to about 200° C. In another embodiment, the temperature at Which the substrate is contacted With the acidsolution is from about 20° C. to about 180° C. In yet anotherembodiment, the temperature at Which the substrate iscontacted With the acid solution is from about 25° C.
toabout 60° C.The substrate is contacted With the acid solution for a timesuf?cient to roughen the surface so that the surface has an rimof about 10 A or more. Although the time varies primarilydepending upon the identity of the substrate and the acid, inThe substrate is contacted With a How rate of the plasmasufficient to roughen the surface so that the surface has an rimof about 10 A or more.
Although the How rate variesthe plasma, the temperature, the time of contact and thepressure, in one embodiment, the How rate of the plasmathe identity of the substrate and the acid, in one embodiment,the temperature at Which the substrate is contacted With theacid solution (temperature of the acid solution) is from aboutembodiment, the substrate is contacted With the plasma fromsurfaces of a dielectric material.material or a silicon containing material such as polysilicon.In another embodiment, the substrate is contacted With anacid solution at a temperature suf?cient to roughen thesurface so that the surface has an rtm of about 10 A or more.Although the temperture varies primarily depending uponin one embodiment, the substrate is contacted With theplasma from about 0.1 second to about 5 minutes.
In anotherabout 1 second to about 2 minutes. In yet anotherand the plasma, the How rate, the time of contact and thepressure, in one embodiment, the temperature at Which thesubstrate is contacted With the plasma is from about 10° C.to about 500° C. In another embodiment, the temperature atWhich the substrate is contacted With the plasma is fromabout 20° C. to about 250° C.
In yet another embodiment,the temperature at Which the substrate is contacted With theplasma is from about 25° C. to about 100° C.The substrate is contacted With the plasma at a pressuresuf?cient to roughen the surface so that the surface has an rimof about 10 A or more. Although the pressure varies primarily depending upon the identity of the substrate and theadjacent the subsequently deposited ultra-thin photoresist) isHe, Ne, Kr, and Xe. Plasmas include one or more of C12,varies primarily depending upon the identity of the substrate65one embodiment, the substrate is contacted With the acidsolution from about 0.1 second to about 5 minutes. Inanother embodiment, the substrate is contacted With the acidsolution from about 1 second to about 2 minutes.
In yetanother embodiment, the substrate is contacted With the acidsolution from about 2 seconds to about 40 seconds.US 6,423,650 B256In one embodiment, a roughened surface (after contactWith a plasma or acid solution) refers to a substrate surfacecontrol. Speci?c examples of Wavelengths to Which theultra-thin photoresists are sensitive (undergo chemical transformation enabling subsequent development) include abouthaving an rtm of about 10 A or more. In another embodiment,a roughened surface refers to a substrate surface having anrtm of about 25 A or more. In yet another embodiment, a248 nm, about 193 nm, about 157 nm, about 13 nm, about11 nm and about 1 nm.
Speci?c sources of radiation includeKrF excimer lasers having a Wavelength of about 248 nm, aroughened surface refers to a substrate surface having an Rimof about 50 A or more. In still yet another embodiment, aXeHg vapor lamp having a Wavelength from about 200 nmroughened suroface refers to a substrate surface having an Rimof about 75 A or more.
HoWever,°the roughened surfacepreferably has an rim of about 200 A or less since extremeroughening contributes to poor coating uniformity of theultra-thin photoresist. In another embodiment, the roughto about 250 nm, mercury-xenon arc lamps having a Wave10length of about 248 nm, an ArF excimer laser having aWavelength of about 193 nm, an F2 excimer laser having a15Wavelength of about 157 nm, extreme UV light havingWavelengths of about 13.5 nm and/or 11.4 nm, and X-rayshaving a Wavelength of about 1 nm.In embodiments Where the patterns or openings formed inthe developed ultra-thin photoresist layer are from about 0.1ened surface has an rim of about 150 A or less.Prior to roughening the semiconductor surface, the Rim ofthe semiconductor surface is typically less than 10 A, andmore typically less than 5 A, and even more typically lessthan 3In this connection, the rim of the roughenedsemiconductor surface is higher than the Rtm.
of the nonroughened semiconductor surface. In one embodiment, therm of the roughened semiconductor surface is at least about5 A higher than the Rim of the non-roughened semiconductorsurface. In another embodiment, the Rm of the roughenedsemiconductor surface is at least about 10 A higher than thertm of the non-roughened semiconductor surface. In yetanother embodiment, the rtm of the roughened semiconductor surface is at least about 20 A higher than the rim of thepm to about 0.15 pm, a 157 nm sensitive photoresist or a 193nm sensitive photoresist is preferably employed.
![](https://s.studizba.com/z.php?f=/templates/si/i/noavatar.png&w=100&h=100&t=1"){kind=avatar}
