USP_6423650 (1063529), страница 3
Текст из файла (страница 3)
In embodiments Where the patterns or openings formed in the developed ultra-thin photoresist layer are about 0.1 pm or less, a13 nm sensitive photoresist or an 11 nm sensitive photoresist(extreme UV photoresist) is preferably employed.25After the upper semiconductor surface is roughened, an3035substrate surface compared to the same ?lm deposited to an40Aspects of the present invention are noW discussed invieW of a portion of a semiconductor device 10 is illustrated.45The method of FIGS. 1—3 may be adapted to any photolithography process including making electrical contacts tovarious device structures, active elements and passive elements including polysilicon gates, Wordlines, sourceregions, drain regions, bit lines, bases, emitters, collectors,conductive lines, conductive plugs, etc.
The method of50FIGS. 1—3 may be used With any suitable semiconductortechnology including but not limited to NMOS, PMOS,even about 0.05 pm or less. Since the ultra-thin photoresistCMOS, BiCMOS, bipolar, multi-chip modules (MCM) andlayer is relatively thin compared With I-line and otherphotoresists, improved resolution and critical dimensioncontrol is realiZed.Ultra-thin resists are processed using small Wavelengthnon-roughened substrate surface.vieW of the ?gures. Referring to FIG. 1, a cross-sectional600 A to about 1,750 A (about 1,750 A or less). In yetThe ultra-thin photoresist layer has a thickness suitablefor functioning as a mask for etching the underlying layerand for forming patterns or openings in the developedultra-thin photoresist layer that are about 0.1 pm or less, andthe additional advantage that a deposited ?lm, the ?lmdeposited during semiconductor processing using the patanother embodiment, the ultra-thin photoresist layer has athickness from about 750 A to about 1,500 A (about 1,500A or less).stripping the ultra-thin photoresist from the substrate.
Inmany instances, the roughened substrate surface providesterned ultra-thin photoresist, adheres more strongly to theinvention have a thickness of about 2,000A or less. In oneembodiment, the ultra-thin photoresist layer has a thicknessfrom about 500 A to about 2,000 In another embodiment,the ultra-thin photoresist layer has a thickness from aboutSuitable subsequent processing of the ultra-thin photoresist is conducted including developing the ultra-thinphotoresist, semiconductor processing (etching or depositing materials using the patterned ultra-thin photoresist), andconductor surface by spin coating.
Spin coating typicallyinvolves depositing the ultra-thin photoresist on the roughened semiconductor substrate and spinning the coated substrate until the photoresist is dry. Due to the roughenedsubstrate surface, there is strong adhesion betWeen theultra-thin photoresist and the substrate.Ultra-thin photoresists in accordance With the presentpartially t-butoxycarbonyloxy substituted poly-phydroxystyrene.
Photoreists are commercially availablefrom a number of sources, including Shipley Company,Kodak, Hoechst Celanese Corporation, and BreWer.non-roughened semiconductor surface.ultra-thin photoresist is deposited over the roughened semiconductor surface by any suitable means. For example, theultra-thin photoresist is deposited over the roughened semiPositive or negative ultra-thin photoresists may beemployed in the methods of the present invention. Anexample of a deep UV chemically ampli?ed photoresist is a55radiation. As used herein, small Wavelength radiation meansIII—IV semiconductors.Semiconductor device 10 includes semiconductor Wafer12 and semiconductor substrate 14A.
Semiconductor Wafer12 may include any suitable semiconductor material, forelectromagnetic radiation having a Wavelength of about 250example, a monocrystalline silicon substrate. Semiconducnm or less. In one embodiment, small Wavelength radiationtor substrate 14A also includes any suitable semiconductorincludes electromagnetic radiation having a Wavelength ofabout 200 nm or less. In another embodiment, small Wavematerial or semiconductor device, for example, one or more60tric layer. In this embodiment, semiconductor substrate 14Acomprises titanium nitride. Semiconductor substrate 14Alength radiation includes extreme ultraviolet (UV) electromagnetic radiation having a Wavelength of about 25 nm orless.
In yet another embodiment, small Wavelength radiationhas a smooth upper surface 14B. The rim of the upper surface14B of semiconductor substrate 14A is about 3includes extreme UV electromagnetic radiation having aWavelength of about 15 nm or less.Small Wavelength radiation increases precision and thusthe ability to improve resolution and critical dimensionof a conductive layer, a semiconducting layer, and a dielec65Referring to FIG. 2, semiconductor device 10 and inparticular the semiconductor substrate 14A is contacted Witha plasma.
The plasma interacts With the upper surface of theUS 6,423,650 B287semiconductor substrate 14A and provides a roughenedsemiconductor surface 14C. Speci?cally, a mixture of 403. The method of claim 1, Wherein the upper surface of thesemiconductor substrate is roughened using a plasma.sccm O2 and 40 sccm Ar at 40° C. under 200 torr is4. The method of claim 1, Wherein the upper surface of thesemiconductor substrate has an rtm of from about 25 A tocontacted With the semiconductor device 10 for 15 seconds.The rtm of the upper surface 14C of semiconductor substrate14A is about 30about 150A.5. The method of claim 1, Wherein the ultra-thin photoresist having a thickness of from about 500 A to aboutReferring to FIG.
3, an ultra-thin photoresist 16 is deposited using spin coating techniques over the roughened semiconductor surface 14C of the semiconductor substrate 14A.For example, a 13 nm sensitive photoresist is deposited oversemiconductor substrate 14A. The ultra-thin photoresist 16135013.10having a Wavelength of about 200 nm or less.has a thickness of about 1,000 A (approximately betWeen7.
The method of claim 1, Wherein the upper surface of thesemiconductor substrate has an rtm of about 10 A to aboutabout 985 A and about 1,015 A given the Rim of theroughened semiconductor surface 14C). Strong adhesionbetWeen the ultra-thin photoresist 16 and semiconductor15device 10; namely, at portions of the middle of the semiconductor device 10, portions betWeen the middle and edge5013.9. The method of claim 1, Wherein the ultra-thin photoresist has a thickness from about 500 A to about 1,500A.10.
Amethod of increasing adhesion betWeen an ultra-thinphotoresist and an upper surface of an underlying substrate,of the semiconductor device 10, as Well as portions near theedge of semiconductor device 10. The semiconductor device10 including the ultra-thin photoresist 16 over the roughenedsemiconductor surface 14C is subjected to suitable photocomprising:lithographic processing steps including photoresist development to provide a patterned ultra-thin photoresist, semicon25ultra-thin photoresist has a thickness of from about 600Although the invention has been shoWn and describedA to about 2,000A,With respect to a certain preferred embodiment orWherein the upper surface has an rtm of from about 10 Aembodiments, it is obvious that equivalent alterations andto about 200A.11.
The method of claim 10, Wherein the roughened uppermodi?cations Will occur to others skilled in the art upon thereading and understanding of this speci?cation and thesurface of the underlying substrate has an rtm of from about35(assemblies, devices, circuits, etc.), the terms (including anyany component Which performs the speci?ed function of thedescribed component (i.e., that is functionally equivalent),containing plasma, a bromine containing plasma, an oxygencontaining plasma and an argon containing plasma.14.
The method of claim 10, Wherein the plasma com4515. The method of claim 10, Wherein the plasma iscontacted With the upper surface of the underlying substratefeatures of the other embodiments as may be desired andadvantageous for any given or particular application.at a temperature from about 10° C. to about 500° C.
and apressure from about 1 mtorr to about 1000 torr and for a timeWhat is claimed is:1. A method of processing a semiconductor substrate,from about 0.1 second to about 5 minutes.comprising:16. The method of claim 10 further comprising irradiatingthe ultra-thin photoresist With electromagnetic radiationproviding the semiconductor substrate having an uppersurface;strate so that the upper surface of the semiconductorsubstrate has an rim of from about 10 A to about 200 A;anddepositing an ultra-thin photoresist on the upper surfaceof the semiconductor substrate, the ultra-thin photoresist having a thickness of from about 500 A to about2,00013.2. The method of claim 1, Wherein the semiconductorsubstrate comprises one or more of a conductive layer, asemiconducting layer, and a dielectric layer.prises at least one of C12, HBr, HCI, Ar, 02, SP6, NF3, CF4,C4H8, CZF6 and CHF3.such feature may be combined With one or more otherroughening the upper surface of the semiconductor sub25 A to about 150A.12.
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