USP_6887801 (1063233), страница 5
Текст из файла (страница 5)
Use of an even larger Wafer holder relative to the Wafer68 may yield further improvement.In an alternative embodiment, a Wafer holding apparatusmay be provided Which lacks a pocket or recessed area for35of a second siZe larger than the ?rst siZe.8. The method of claim 7 Wherein the depth is greater thanthe thickness of the Wafer.9. The method of claim 7 Wherein the depth is less thanthe thickness of the Wafer plus the thickness of the desiredreceiving a Wafer.
Instead, the Wafer holding apparatus mayphotoresist layer.include a number of channels and/or through holes Which10. The method of claim 7 Wherein the depth is substantially equal to the thickness of the Wafer.eXtend to a ?at surface on Which a Wafer may be placed. Asuction or vacuum force may then be applied using thethrough holes to secure the Wafer in place on the holder.Those skilled in the art Will recogniZe that the presentinvention may be manifested in a variety of forms other thanthe speci?c embodiments described and contemplatedherein.
Accordingly, departures in form and detail may bemade Without departing from the scope and spirit of the4045applied Within the recessed portion and Wherein the step ofsecuring the Wafer in the pocket includes:1. Amethod of preparing a Wafer for a fabrication process,applying a vacuum force via the channel after the Waferthe method comprising:providing a Wafer receiving apparatus for receiving ais placed, the vacuum force being applied such that theWafer is held in place in the recessed portion.14. The method of claim 7 Wherein the Wafer receiving55the Wafer receiving apparatus;applying photoresist to the Wafer;spinning the Wafer and the Wafer receiving apparatusWhile the Wafer is placed in the recessed portion of theWafer receiving apparatus; andWherein the Wafer receiving apparatus further includes acircumferential groove in the recessed portion, Whereinthe method further comprises:alloWing a ?uid to enter the circumferential groove; and 65causing the ?uid in the circumferential groove to eXpandand release the Wafer from the pocket.12.
The method of claim 7 further comprising securing theWafer in the pocket.13. The method of claim 7 Wherein the Wafer receivingapparatus further includes a channel coupled to the recessedportion, the channel adapted to alloW a vacuum force to bepresent invention as described in the appended claims.What is claimed is:Wafer of a ?rst siZe, the Wafer receiving apparatusincluding a recessed portion having a depth;placing a Wafer of the ?rst siZe in the recessed portion of11. The method of claim 7 Wherein the ?rst siZe is the siZeof a three inch Wafer, and the second siZe is the siZe of a fourinch Wafer.apparatus further includes a circumferential groove in therecessed portion, Wherein the method further comprises:alloWing a ?uid to enter the circumferential groove; andcausing the ?uid in the circumferential groove to eXpandand release the Wafer from the pocket.15.
A method of reducing edge bead thickness Whileapplying photoresist to a Wafer comprising:providing a Wafer receiving apparatus for receiving aWafer of a ?rst siZe, the Wafer receiving apparatusincluding a pocket having a depth, Wherein the depth ischosen to correspond to a Wafer of the ?rst siZe;placing a Wafer of the ?rst siZe in the pocket of the Waferreceiving apparatus;US 6,887,801 B287applying photoresist to the Wafer;spinning the Wafer and the Wafer receiving apparatusWherein the ?rst siZe is the siZe of a three inch Wafer, andthe second siZe is the siZe of a four inch Wafer.17.
A method of reducing edge bead thickness Whileapplying photoresist to a Wafer comprising:providing a Wafer receiving apparatus for receiving aWafer of a ?rst siZe, the Wafer receiving apparatusincluding a pocket having a depth, Wherein the depth isWhile the Wafer is placed in the pocket to create aphotoresist layer of a desired thickness; andWherein the depth is less than the thickness of the Waferplus the thickness of the desired photoresist layer.16. A method of reducing edge bead thickness Whileapplying photoresist to a Wafer comprising:providing a Wafer receiving apparatus for receiving aWafer, the Wafer receiving apparatus being siZed to becompatible With rnachines adapted for use With Waferschosen to correspond to a Wafer of the ?rst siZe;placing a Wafer of the ?rst siZe in the pocket of the Wafer10of a second siZe larger than Wafers of a ?rst siZe, theWhile the Wafer is placed in the pocket to create aWafer receiving apparatus including a pocket having adepth, Wherein the depth is chosen to correspond to aWafer of the ?rst siZe;placing a Wafer of the ?rst siZe in the pocket of the Waferreceiving apparatus;applying photoresist to the Wafer;spinning the Wafer and the Wafer receiving apparatusreceiving apparatus;applying photoresist to the Wafer;spinning the Wafer and the Wafer receiving apparatusphotoresist layer of a desired thickness; and15Wherein the Wafer receiving apparatus further includes acircumferential groove in the recessed portion, Whereinthe method further comprises:alloWing a ?uid to enter the circumferential groove; andcausing the ?uid in the circumferential groove to eXpandand release the wafer from the pocket.While the Wafer is placed in the pocket to create aphotoresist layer of a desired thickness; and*****UNITED STATES PATENT AND TRADEMARK OFFICECERTIFICATE OF CORRECTIONPATENT NO.: 6,887,801 B2Page 1 of 1APPLICATION NO.
: 10/623351DATEDINVENTOR(S): May 3, 2005: Bernard Q. LiIt is certified that error appears in the above-identi?ed patent and that said Letters Patent ishereby corrected as shown below:Title Page,Page 3, column 2, line 10, change “Appl, Phys.” to --Appl. Phys.Page 3, column 2, line 11, change “(10-K-300K)” to --(10K-300K)Page 3, column 2, line 58, change “Electo-Optics” to --Electro-OpticsPage 4, column 1, line 29, change “V0. 1850,” to --Vol. 1850,Page 4, column 2, line 43, change “Proceedings fo” to --Proceedings ofColumn 1,Line 34, change “area 12” to --area 20-Column 2,Line 26, before “the Wafer” change “bold” to --holdColumn 3,Line 10, after “drilled” change “in,” to --therein,-Signed and Sealed thisThirty-?rst Day of July, 2007m W451i,”JON W.
DUDASDirector ofthe United States Patent and Trademark O?ice.
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