USP_6887801 (1063233), страница 2
Текст из файла (страница 2)
99—105, Sep. 1997.Fushimi, et al., “Degradation Mechanism in Carbon—dopedGaAs Minority—carrier Injection Devices,” 34* AnnualIRPS Proceedings, Dallas, TX., Apr. 29—May 2, 1996, 8pages.G. G. OrtiZ, et al., “Monolithic Integration of In0.2 GAO.8AsVertical Cavity Surface—Emitting Lasers With Resonance—Enhanced Quantum Well Photodetectors”, ElectronicsLetters, vol. 32, No. 13, Jun. 20, 1996, pp. 1205—1207.G.
Shtengel et al., “High—Speed Vertical—Cavity Surface—Emitting Lasers”, Photon. Techn. Lett., vol. 5, No. 12, pp.1359—1361 (Dec. 1993).Geib, et al., “Comparison of Fabrication Approaches forSelectively OxidiZed VCSEL Arrays,” Proceedings of SPIE,vol.
3946, pp. 36—40, 2000.Graf, Rudolph, Modern Dictionary of Electronics, 6”” ed.,Indiana: HoWard W. Sams & Company, 1984, p. 694.Guenter et al., “Reliability of Proton—Implanted VCSELs forData Communications”, Invited paper, SPIE, vol. 2683, OELASE 96; Photonics West: Fabrication, Testing and Reliability of Semiconductor Lasers, (SPIE, Bellingham, WAteriZation of MOVPE—GroWn Vertical—Cavity Surface—Emitting Lasers”, Photon. Tech. Lett., vol.
7, No. 10, pp.1110—1112, Oct. 1995.Huffaker et al., “Lasing Characteristics of LoW ThresholdMicrocavity Layers Using Half—Wave Spacer Layers andLateral Index Con?nement”, Appl. Phys. Lett., vol. 66, No.14, pp. 1723—1725, Apr. 3, 1995.JeWell et al., “Surface Emitting Microlasers for PhotonicSWitching & Intership Connections”, Optical Engineering,vol. 29, No.
3, pp. 210—214, Mar. 1990.Jiang et al., “High—Frequency PolariZation Self—Modulationin Vertical—Cavity Surface—Emitting Lasers”, Appl. Phys.Letters, vol. 63, No. 26, Dec. 27, 1993, pp. 2545—2547.KL. Lear et al., “Selectively OxidiZed Vertical CavitySurface—Emitting Lasers With 50% PoWer Conversion Ef?ciency”, Elec. Lett., vol. 31, No.
3 pp. 208—209, Feb. 2,1995.Kash, et al., “Recombination in GaAs at the AIAs oxideGaAs interface,” Applied Physics Letters, vol. 67, No. 14,pp. 2022—2024, Oct. 2, 1995.Kishino et al., “Resonant Cavity—Enhanced (RCE) Photodetectors”, IEEE Journal of Quantum Electronics, vol. 27,No. 8, pp. 2025—2034.Koley B., et al., “Dependence of lateral oxidation rate onthickness of AIAs layer of interest as a current aperture invertical—cavity surface—emitting laser structures”, Journal ofApplied Physics, vol. 84, No.
1, pp. 600—605, Jul. 1, 1998.Kuchibhotla et al.; “LoW—Voltage High Gain ResonantiCavity Avalanche Photodiode”, IEEE Photonics TechnologyLetters, vol. 3, No. 4, pp. 354—356.Lai et al., “Design of a Tunable GaAs/AlGaAs Multiple—Quantum—Well Resonant Cavity Photodetector”, IEEEJournal of Quantum Electronics, vol. 30, No. 1, pp.108—114.Lee et al., “Top—Surface Emitting GaAs Four—Quantum—Well Lasers Emitting at 0—85 um”, Electronics Letters, vol.24, No.
11, May 24, 1990, pp. 710—711.Lehman et al., “High Frequency Modulation Characteristicsof Hybrid Dielectric/AlGaAs Mirror Singlemode VCSELs”,Electronic Letters, vol. 31, No. 15, Jul. 20, 1995, pp.1251—1252.Maeda, et al., “Enhanced Glide of Dislocations in GaAs1996).Single Crystals by Electron Beam Irradiation,” JapaneseGuenter, et al., “Commercialization of HoneyWell’s VCSELJournal of Applied Physics, vol. 20, No.
3, pp. L165—L168,Technology: further developments,” Proceedings of theMar. 1981.SPIE, vol. 4286, GSPIE 2000, 14 pages.Magnusson, “Integration of Guided—Mode Resonance Filters and VCSELs”, Electo—Optics Research Center, DepartHadley et al., “High—PoWer Single Mode Operation fromHybrid Ion Implanted/Selectively OxidiZed VCSELs”, 13thAnnual Meeting IEEE Lasers and Electro—Optics Society2000 Annual Meeting (LEOS 2000), Rio Grande, PuertoRico, pp. 804—805.HaWthorne, et al., “Reliability Study of 850 nm VCSELs forData Communications,” IEEE, pp. 1—11, May 1996.ment of Electrical Engineering, University of Texas atArlington, May 6, 1997.Martinssonetal.,“TransverseModeSelectioninLarge—Area Oxide—Con?ned Vertical—Cavity Surface—Emitting Lasers Using a ShalloW Surface Relief”, IEEEPhoton. Technol. Lett., 11(12), 1536—1538 (1999).US 6,887,801 B2Page 4Miller et al., “Optical Bistability Due to Increasing Absorption”, Optics Letters, vol.
9, No. 5, May 1984, pp. 162—164.Peck, D. SteWart, Cornprehensive Model for Hurnidity Testing Correlation, IEEE/IRPS, pp. 44—50, 1986.Min S00 Park and Byung Tae Ahn, “Polarization control ofRies, et al., “Visible—Spectrurn (7»=650nrn) photopurnpedvertical—cavity surface—ernitting lasers by electro—optic(pulsed, 300 K) laser operation of a vertical—cavity AIAs—birefringence,” Applied Physics Letter, vol. 76, No. 7, pp.AIGaAs/InAIP—InGaP quantum well heterostructure utiliZ813—815, Feb. 14, 2000.Morgan et al., “200 C, 96—nrn Wavelength Range, Continuing native oXide rnirrors,” Applied Physics Letters, vol. 67,ous—Wave Lasing frorn Unbonded GaAs MOVPE—GroWnVertical Cavity Surface—Ernitting Lasers”, IEEE PhotonicsTechnology Letters, vol.
7, No. 5, May 1995, pp. 441—443.Morgan et al., “High—PoWer Coherently Coupled 8X8 Vertical Cavity Surface Ernitting Laser Array”, Appl. PhysLetters, vol. 61, No. 10, Sep. 7, 1992, pp. 1160—1162.Morgan et al., “Hybrid Dielectric/AlGaAs Mirror SpatiallyFiltered Vertical Cavity Top—Surface Ernitting Laser”,Appl.Phys. Letters, vol. 66, No.
10, Mar. 6, 1995, pp. 1157—1159.Morgan et al., “Novel Hibrid—DBR Single—Mode Controlled GaAs Top—Ernitting VCSEL With Record LoW Voltage”, 2 pages, dated prior to Dec. 29, 2000.Morgan et al., “One Watt Vertical Cavity Surface ErnittingLaser”, Electron. Lett., vol. 29, No. 2, pp. 206—207, Jan. 21,1993.Morgan et al., “Producible GaAs—based MOVPE—GroWnVertical—Cavity Top—Surface Ernitting Lasers With RecordPerforrnance”, Elec. Lett., vol. 31, No.
6, pp. 462—464, Mar.16, 1995.Morgan et al., “Progress and Properties of High—PoWerCoherent Vertical Cavity Surface Ernitting Laser Arrays”,SPIE, V0. 1850, Jan. 1993, pp. 100—108.Morgan et al., “Progress in PlanariZed Vertical Cavity Surface Ernitting Laser Devices and Arrays”, SPIE, vol. 1562,Jul. 1991, pp. 149—159.Morgan et al., “Spatial—Filtered Vertical—Cavity Top Surface—Ernitting Lasers”, CLEO, 1993, pp. 138—139.Morgan et al., “Subrnilliarnp, LoW—Resistance, Continuous—Wave, Single—Mode GaAs Planar Vertical—Cavity SurfaceErnitting Lasers”, HoneyWell Technology Center, Jun.
6,1995.Morgan et al., “Transverse Mode Control of Vertical—CavityTop—Surface Ernitting Lasers”, IEEE Photonics TechnologyLetters, vol. 4, No. 4, Apr. 1993, pp. 374—377.Morgan et al., “Vertical—cavity surface—ernitting laserarrays”, Invited Papers, SPIE, vol. 2398, Feb. 6, 1995, pp.65—93.Morgan et al., Vertical—cavity surface ernitting lasers comeof age, Invited paper, SPIE, vol.
2683, 0—8194—2057, Mar.1996, pp. 18—29.No. 8, pp. 1107—1109, Aug. 21, 1995.SS. Wang and R. Magnusson, “Multilayer Waveguide—Grating Filters”,Appl. Opt., vol. 34, No. 14, pp. 2414—2420,1995 .S.S. Wang and R. Magnusson, “Theory and Applications ofGuided—Mode Resonance Filters”,Appl. Opt., vol. 32, No.14, pp. 2606—2613, 1993.Sah, et al., “Carrier Generation and Recornbination in P—NJunctions and P—N Junction Characteristics,” Proceedings ofthe IRE, pp. 1228—1243, Sep., 1957.Schubert, “Resonant Cavity Light—Ernitting diode”, Appl.Phys. Lett., vol.
60, No. 8, pp. 921—923, Feb. 24, 1992.Shi, et al., “Photolurninescence study of hydrogenated aluminum oXide—serniconductor interface,” Applied PhysicsLetters, vol. 70, No. 10, pp. 1293—1295, Mar. 10, 1997.Smith RB et al., PolariZation—Sensitive SubWavelengthAntire?ection Surfaces on a Serniconductor for 975 NM,Optics Letters, vol. 21, No. 15, Aug. 1, 1996, pp.1201—1203.Spicer, et al., “The Uni?ed Model For Schottky BarrierFormation and MOS Interface States in 3—5 Cornpounds,”Applications of Surface Science, vol. 9, pp. 83—01, 1981.Suning Tang et al., “Design Limitations of Highly ParallelFree—Space Optical Interconnects Based on Arrays of Vertical Cavity Surface—Ernitting Laser Diodes, Microlenses,and Photodetectors”, Journal of LightWave Technology, vol.12, No.
11, Nov. 1, 1994, pp. 1971—1975.T. Mukaihara, “Polarization Control of Vertical—cavity Surface—Ernitting Lasers by a Birefringent Metal/Serniconductor PolariZer Terrninating a Distributed Bragg Re?ector,”Tokyo Institute of Technology, Precision and IntelligenceLaboratory, pp. 183—184.Tao, Andrea, “Wet—OXidation of Digitally AlloyedAIGaAs,” National Nanofabrication Users Network,Research Experience for Undergraduates 2000, 2 pages.Tautrn, et al., CornrnerialiZation of HoneyWell’s VCSELTechnology, Published in Proceedings fo the SPIE, vol.3946, SPI, 2000, 12 pages.TshikaZu Mukaihara, et al., “A Novel Birefringent Distributed Bragg Re?ector Using a Metal/Dielectric PolariZer forMorgan, “High—Perforrnance, Producible Vertical CavityLasers for Optical Interconnects”, High Speed ElectronicsPolariZation Control of Surface—Ernitting Lasers,” Japan J.Appl.
![](https://s.studizba.com/z.php?f=/templates/si/i/noavatar.png&w=100&h=100&t=1"){kind=avatar}
