USP_6576055 (1063346)
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US006576055B2(12)United States Patent(10) Patent N0.:US 6,576,055 B2(45) Date of Patent:Jun. 10, 2003Shirley(54)METHOD AND APPARATUS FORCONTROLLING AIR OVER A SPINNING5,688,322 A11/1997 Motoda et a1. ............. .. 118/525,695,817 A * 12/1997 Tateyama et a1. ......... .. 427/240MICROELECTRONIC SUBSTRATE6,063,190 A*5/20006,103,680 A*8/2000 Honda et a1.6,159,288*.-~-(75)Inventor‘(73)Assignee.
Micron Technology, Inc., Boise, ID.Paul D‘ Shlrley’ Mendlan’ ID (Us)_..Notice:12/2000Satou et a1......... ... ...U_S_C_ 154(k)) by 0 days_118/526,221,787 B14/2001*Ogata ....................... .. 438/758118/523/2002 Tateyama e161. ......... .. 118/300OTHER PUBLICATIONS_____Dictionary of Scienti?c and Technical Terms, Parker,McGraW—Hill, 3rd Ed., 1984, p. 1317** Cited by examiner(21) Appl. NO.Z 09/859,601(22) Flled:May 16’ 2001Primary Examiner—Richard Crispino(65)Prior Publication DataAssistant Examiner—George R. Koch, III13 2001ep..
. . . . ..3/2001 Takeshita et a1. ......... .. 118/320Subject to any disclaimer, the term of thispatent is extended or adjusted under 35118/52. 510/1786,197,385 B1 *6,361,600 B1 *Us 2001/0020443 A1 S. . . . . ..6,284,043 B1 * 9/2001 Takekuma(Us)(*)AHasebe et a1.(74) Attorney, Agent, or Firm—Dorsey & Whitney LLP,(57)ABSTRACTRelated US. Application Data__A method and apparatus for formmg a generally umform(62)Division of application NO, 09/384,830, ?led on Aug 27’1999, now Pat. No. 6,261,535.(51)Int C17''B05C 13/00 B05C 15/00"""""""""""" "’liquid layer on a surface of an upper surface microelectronicsubstrate. The apparatus can include a support that engagesless than the entire loWer surface of the microelectronicsubstrateand rotates themicroelectronic substrateata(52)US‘ Cl‘ """""""""""""" " 118/52’ 118/56’ 11118selected rate.
Abarrier can extend over the upper surface of(58)Field of Search ........................... .. 118/52, 320, 56,Same rate as the Substrate to Separate a rotating air mass118/501’ 500’ 504’ 64’ 70’ 427/240’ 425’438/782’ 909’ 758adjacent to the upper surface and Within the barrier from astationary air mass external to the barrier. The rotating air_the microelectronic substrate and can rotate at about the,(56)turbances that create non-uniformities in the liquid layer.[)3 PATENT DOCUMENTSAccordingly, the method and apparatus can increase therange of thicknesses to Which the liquid layer can be formed2,,;//5,238,713 A5,472,502mass can reduce the likelihood for liquid/air interface disReferences CltedA5,518,542 Agamfimoto et a1‘ """"" "Wain..
... .. ... ... .8/1993 Sago et a112/1995Batchelderand can reduce the topographical non-uniformities of the. . . ../liquidlayer~427/240. ... ... .. . . ..118/525/1996 Matsukawa et a1. ........ .. 118/5222 Claims, 4 Drawing Sheets2252232492422/0260EU.S. PatentJun. 10, 2003Sheet 1 of4US 6,576,055 B270\Z52472Q/\/;| L‘f2!32135230$202Z~\I25b%F1 . 1(P115 Art)U.S. PatentJun. 10, 2003Sheet 2 of4700F1. . 2(P115: Art)US 6,576,055 B2U.S. PatentJun.
10, 2003Sheet 3 of4US 6,576,055 B2U.S. PatentJun. 10, 2003Sheet 4 of4US 6,576,055 B2248i;250240I 74220270236US 6,576,055 B212METHOD AND APPARATUS FORCONTROLLING AIR OVER A SPINNINGMICROELECTRONIC SUBSTRATEfrom the substrate center. The variation in heat transfer ratescan cause the surface temperature of the substrate to vary, inturn causing the evaporation rate of the ?uid (and thereforethe thickness of the ?uid) to vary over surface of thesubstrate.Yet another draWback With this technique is that theThis application is a divisional of US. patent applicationSer. No. 09/384,830, ?led Aug.
27, 1999, now US. Pat. No.viscosity selected for the liquid photoresist material must6,261,535.TECHNICAL FIELDThe present invention is directed toWard methods and10apparatuses for controlling the movement of air over aaccount for the diameter and rotation speed of the substrate.For example, a relatively viscous liquid may be selected forlarge substrates to prevent the liquid from ?ying off theedges of the substrate before accumulating to the desiredthickness. Such a liquid may be too viscous for smallerspinning microelectronic substrate, for example duringsubstrates.
Accordingly, conventional techniques typicallyapplication of a liquid to the microelectronic substrate.use liquids With different viscosities to form layers havingdifferent thicknesses. For example, less viscous liquids canBACKGROUND OF THE INVENTION15approach is that it requires controlling and/or adjusting theviscosity of the liquid and/or providing multiple sources ofthe liquid, each having a different viscosity.
Furthermore,displays, etching processes are often used to form featureson a microelectronic substrate or substrate assembly thatforms the foundation of the device. A typical etching technique includes depositing a layer of a photoresist material on20exposing the unmasked portions to a selected radiation. Theportions to become either soluble (in the case of a positivephotoresist) or insoluble (in the case of a negativephotoresist) When exposed to a selected solvent. The photoresist layer is then Washed With the selected solvent toremove either the exposed or unexposed photoresistmaterial, exposing a portion of the substrate beneath.
Thevelocities, the liquid can form Waves or other disturbances,25 as discussed above.FIG. 1 is a partially schematic, partially cutaWay sideelevation vieW of a conventional device 10 that can addresssome of the foregoing problems for rectangular substrates.30The device 10 includes a motor 30 having a shaft 32connected to a chuck 33 and a boWl 20. A substrate 1235to the chuck 33 and both the substrate 12 and the boWl 20spin as the shaft 32 rotates.
Accordingly, the air adjacent tothe substrate 12 is partially contained Within the spinningboWl 20 so that at least a portion of the air Will spin at thesubstrate is Washed With an etchant that removes materialfrom the exposed portions of the substrate While leavingintact the portions of the substrate covered by the photoresistmaterial.It is often important to control the uniformity of thethickness to Which the photoresist material is deposited onthe substrate.
For example, if the photoresist material isdeposited to a non-uniform thickness, certain portions of thephotoresist material may he overexposed to the radiationWhile other portions may be underexposed. Where thehaving a rectangular planform shape is releasably mountedsame rate as the substrate 12. A ?uid supply conduit 23disposes a liquid onto the substrate 12 through an aperture24 and the liquid spreads out over the surface of the substrate12 as the substrate 12 spins. Excess liquid is collected in the40photoresist material is overexposed, the edges betWeen themasked and unmasked regions can become blurred, makingthe process unsuitable for forming very small features.Where the photoresist material is underexposed, it may nothave suf?cient exposure time to change solubility.Furthermore, it may be desirable to keep the overall thickness of the photoresistant layer relatively small to increasethe resolution of the features formed With this technique.The photoresist material is typically deposited on thesubstrate or substrate assembly by disposing the material inliquid form at the center of the substrate and spinning thesubstrate about its center to spread the material outWardly bycentrifugal force.
One draWback With this technique is thatthe liquid photoresist material can interact With the adjacentWhile the angular velocity of the substrate can be used tocontrol the thickness of the liquid layer (for example, byincreasing the angular velocity to reduce the layerthickness), this technique is limited because at high angularthe substrate, masking selected portions of the layer andselected radiation changes the solubility of the unmaskedbe used to form thinner layers and more viscous liquids canbe used to form thicker layers.
One problem With thisDuring the manufacture of microelectronic devices, suchas memory chips, processor chips and ?eld emissionboWl 20 as it runs over the edges of the substrate 12 and canbe removed from the boWl via a drain 21. Air can beexhausted from the boWl 20 through an exhaust port 22.One potential draWback With the device 10 shoWn in FIG.1 is that the boWl 20 can be heavy and dif?cult to spin45smoothly at high rates of speed. Furthermore, the drain 21and the exhaust port 22 may be coupled to a drain line 23aand an exhaust line 23b, respectively, Which must be securedto the boWl 20 With ?uid-tight rotating couplings.
Stillfurther, the boWl 20 is partially open so that it may be timeconsuming to bring the air mass adjacent to the substrate 12up to the same rotational speed as the substrate 12, particularly Where the substrate 12 rotates at high speed.FIG. 2 is a partially schematic, partially cutaWay sideelevation vieW of another conventional device 10a that55 includes a motor 30a coupled With a shaft 32a to a chuckair mass, creating Waves or other disturbances in the pho33a. The chuck 33a includes a rectangular recess 36 fortoresist material that affect the uniformity of the layerreceiving the rectangular substrate 12. A cover 40 is releasably placed on the chuck 33a to rotate With the chuck 33athickness.
This problem can become more acute When thevelocity of the substrate increases, for example, When thesubstrate is rotated at a high angular velocity and/or Whenthe substrate has a large radius so that at even moderateand the substrate 12. The cover 40 includes an aperture 41that alloWs ?uid to pass from the ?uid supply conduit 23 tothe surface of the substrate 12. The apparatus 10a can furtherangular velocities, the linear speed toWard the edge of thesubstrate is high.include a collection vessel 20a ?xed relative to the motor30a and having a drain 21 and an exhaust port 22 forAnother draWback With this technique is that the convec60removing liquid and gas from the region adjacent to thetive heat transfer rate can vary over the surface of the 65 substrate 12.substrate because the relative linear velocity betWeen thesubstrate and the adjacent air mass varies With the distanceOne problem With the device 10a shoWn in FIG.
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