thick_resist_processing (1063676)
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Thick ResistProcessingRevised: 2013-11-07Source:www.microchemicals.com/downloads/application_notes.htmlFields of Application for Thick ResistsElectroplating often requires resist film thickness of 10 µm and beyond in order to realizehigh metal structures. Please consult the document Electroplating with Resist Masks for details on electroplating.In microoptics or microfluidics, structures are often realized by transferring reflowed,spherical or cylindrical resist structures via dry-etching into the substrate. For this purpose,in many cases thick resist films are required.Deep dry etching also requires resist films with a certain thickness.Suited Resists for Thick FilmsRealizing thick films with low-viscosity resists is problematic for two main reasons:During spin-coating, the required low spin speed increases the edge bead.
Multiple coatingis not possible due to the high solvent concentration, which causes the dissolution of the resist film already coated.During exposure, the typically high photo active compound concentration (= high absorption) in thin resist makes the through-exposure of thick films made with ‘thin resists’ difficult.
In addition to high required exposure doses, the high N2 release of DNQ-based resistsmay cause bubbles or cracks in the resist film.Suited thick resists are highly viscous as well as low absorbing in order to allow the formation as well as through exposure of thick films. For resist film thicknesses of 5-30 µm, werecommend the positive AZ® 4562 (g-, h-, and i-line sensitive), or the AZ® 9260 with enhanced resolution and aspect ratio (h-, and i-line sensitive).If a negative resist is required, the AZ® nLOF 2000 series (only i-line sensitive) is a goodchoice for resist film thicknesses up to approx.
20 µm. For very high resist film thicknessesup to 150 µm, the positive AZ® 40 XT i-line resist, or the negative AZ® 15 nXT and AZ® 125nXT i-line resists are recommended.Please contact us for further technical information, technical data sheets, or samples!AZ ® 9260 lines with an aspect ratio >16 (process and image by Mr. RogerBischofberger, applied microSWISSGmbH)Left: 10 µm lines with a 40 µm thick AZ® 40 XT; right: 80µm lines with a 120 µm thick AZ® 125 nXT.
Source: AZ®40 XT and AZ® 125 nXT technical data sheet by AZ-EM.Photoresists, wafers, plating solutions, etchants and solvents ...Phone: +49 731 977343 0www.microchemicals.eusales@microchemicals.euMicroChemicals GmbH - Thick Resist ProcessingSuited Spin Profiles for Thick Resist FilmsThe thick resists listed in the previous section allow film thicknesses of approx. 5-30 µm withstandard spin profiles (2000-4000 rpm for 30 seconds).
Generally, higher resist film thicknesses can be attained with lower spin speeds.However, at low spin speed, the edge bead increases, and the resist film homogeneity decreases and becomes less reproducible. Therefore, a much better suited spin profile for thickresist films is a high spin speed of approx. 2.000 rpm (also requiring steep ramps up anddown of approx. 1.000 rpm/s) for a short time (few seconds).Multiple Coating for Very Thick Resist FilmsIf the required resist film thickness can not be attained with a highly viscous resist and anadjusted spin profile, multiple coating allows the formation of very thick films.Multiple Coating requires thick resists such as AZ® 9260 or AZ® 4562 with a high viscosity (=low solvent concentration).
Otherwise, a second coating step will partially or completely dissolve the resist film coated before, thus leading to strong inhomogeneities in the resist filmthickness. A short softbake between two coating cycles also suppresses the dissolution ofthe already existing film by the next one.The following flowchart shows recommended parameters for multiple coating of the thick resist AZ® 9260 in 35 µm steps:Spin CoatingRamp: 900 rpm/s*1.500 rpm for 3 sSolvent Evap.20-30 min atroom temperatureSoftbake 15 min 60°CSoftbake 25 min100°CEdgeBeadRemovalwith AZ ® EBRSolventSoftbake100°C for 1min/µm filmthicknessapprox. 35 µm per cycleEdge Bead Prevention and RemovalEspecially in the case of coating thick resist films, a so-called edge bead forms which maycause sticking to the mask as well as an undesired proximity-gap during exposure (with areduced lateral resolution as a consequence). If no automatic edge bead removal is possible,initial stages for solution to avoid/lower the edge bead are: Circular substrates: Manual edge bead removal with AZ® EBR Solvent (not acetone orother low-boiling solvents!) dispensed onto the edge of substrate spinning at 500 rpm. An elevated spin-speed for a shorter time A ‘spin-off’ of the edge bead by abruptly increasing the spin speed at a certain stage ofspin coating: The resist film should be solvent-poor enough to prevent further thinning,while the edge bead needs a viscosity still low enough for proper spin-off.
For this purpose, the optimum spin profile has to be found individually. A multiple coating with an elevated spin speed for each coating cycle For thick or solvent-rich resist films, a delay between coating and softbake prevents theedge bead from growing during softbake due to the thermally reduced viscosity. The delay time depends on the resist film thickness and can be shortened by applying moderatetemperatures (e. g. stepwise: room temperature ... 50°C ...
95°C). A well-adjusted cavity in the substrate holder with the substrate as close inlay Edged substrates: If applicable, removing (breaking) the outer pieces of the substratebearing the edge bead; alternatively manual cleaning of the substrate from the edgebead with cleanroom wipes. Exposure and development of the edge bead is also possible,but may cause T-topping.Photoresists, wafers, plating solutions, etchants and solvents ...Phone: +49 731 977343 0www.microchemicals.eusales@microchemicals.eu-2-MicroChemicals GmbH - Thick Resist ProcessingSoftbaking of Thick Resist Filmsremaining solv.
conc. (vol%)__The thicker the resist film, the smaller25initial solvent conc. = 26% (12 µm)the possible softbake parameter wininitial solvent conc. = 21% (1.0 µm)dow formed by baking temperatureand time:20softbake temperature:A softbake much too cool/short55, 70, 85, 100, 115°Cmay cause bubbling and foaming of15the resist film due to the nitrogengenerated during exposure. Additionally, the remaining solvent concentra10tion causes a high dark erosion.A softbake too cool/short maycause bubbles in the substrate-near5resist by N2 formed during exposure.These bubbles are sometimes not visible before ‘free-developed’.
Addition0ally, the dark erosion is increased.0100200300400500600A softbake too hot/long decomsoftbake-time (seconds)poses a fraction of the photo activecompound thus decreasing the development rate. Additionally, the very low solvent concentration embrittles the resist film making it susceptible to the formation of crackles.‘Bubbles’ in the resist film - despite a sufficient softbake - are in many cases cracks causesby mechanical stress due to the N2 generated during exposure. If the N2 cannot dissipatefrom the resist film fast enough due to the high resist film thickness, strong mechanicalstress occurs expanding and cracking the resist.As a rule of thumb, a compromise between sufficient solvent evaporation, and minimizedDNQ-loss is a softbake at 100°C for 1 minute per µm resist film thickness on a hotplate.
Detailed information on the softbake can be found in the document Softbake of Photoresists.Rehydrationdevelopment time in AZ 400K_1:4 (min)During the softbake, the bulk water concentration of photoresist films drops. However, a certain water content in the resist is required to allow a reasonable high development rate anda high contrast of DNQ-based positive resists (details see Exposure of Photo Resists) such asthe AZ® 1500, 4500, 6600 or 9200 series - but NOT the AZ® 40 XT.This missing water has to diffuse from the air into the resist film. Therefore, a delay time between baking and exposure is necessary to rehydrate the complete photo resist film towardsthe substrate. Beside the resist film thickness, the required rehydration time also1000depends on the temperature (water diffu®AZ 9260 22 µmsion in the resist bulk is thermal activated) and the air humidity itself.If the air humidity is too low, even a long100rehydration cannot provide a sufficientwater content, since the equilibrium (adsorbtion and evaporation) H2O concentration in the resist film keeps below a required value.10Dependant on the resist film thickness, arehydration time of approx.
10 min (10µm resist film thickness), one hour (30insufficiently … sufficiently rehydrated40 µm) up to 10 hours (100 µm) are re1quired. The document Rehydration ofPhotoresists gives more details on this0,1110100rehydration time @ 52%/22°C (min)topic.Photoresists, wafers, plating solutions, etchants and solvents ...Phone: +49 731 977343 0www.microchemicals.eusales@microchemicals.eu-3-MicroChemicals GmbH - Thick Resist ProcessingBubbling and Cracks in the Resist Film after ExposureDisclaimer of WarrantyAll information, process guides, recipes etc.
given in this brochurehave been added to the best of our knowledge. However, we cannotissue any guarantee concerning the accuracy of the information.We assume no liability for any hazard for staff and equipment whichmight stem from the information given in this brochure.Generally speaking, it is in the responsibility of every staff memberto inform herself/himself about the processes to be performed inthe appropriate (technical) literature, in order to minimize any riskto man or machine.Too much remaining solvent due to a softbake too short/too cool causesbubbles especially near the substrate (top, right-hand).
Resist films softbaked very long/hot tend to embrittle causing cracks by the expanding nitrogen (bottom: onsight view left-hand, cross-section right-hand).Resist FilmDuring exposure of DNQ-based resists (such as the AZ® 4562 or 9260 series - but NOT theAZ® 40 XT), the photo active compound diazonaphtoquinone (DNQ) is converted into indenecarboxylic acid with a nitrogen molecule (N2) as a side product. Completely exposed photoresist releases a N2-volume significantly exceeding the resist volume which, thermally activated, diffuses to the resist surface and dissipates.Especially thick resists generate a comparable high N2-volume with respect to the resist surface. As a consequence, during or after exposure, bubbles or cracks may appear in the resistfilm.
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