USP_6815359 (1063533), страница 4
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The method of claim 16, Wherein the ?uorine-basedplasma has operating parameters of 10—2000 sccm flow rate,5—1000 mTorr chamber pressure, 50—2000 W RF poWer, and14. The process of claim 7, Wherein the transforming stepincludes at least one of decarboxylation cross-linking, andcomprising:etching or doping the layer or substrate according to thefeature, Wherein the exposed surfaces are structurallydenser due to the ?uorination, the ?uorination including the feature being exposed to a ?uorine-basedplasma.parameters of 10—2000 sccm flow rate, 5—1000 mTorr chamber pressure, 50—2000 WRF poWer, and 20—80° C. loWerdensi?cation of the top surface and the side surfaces to formthe hardened surface.15.
An integrated circuit fabrication process, the processterned using at least one of a deep ultraviolet lithographicWavelength, a vacuum ultraviolet lithographic Wavelength,vertical thickness less than approximately 0.25 pm, and the10.
The process of claim 9, Wherein the exposing stepincludes providing the ?uorine-based plasma at operating13. The process of claim 7, Wherein the hardened surfacesurface, Wherein the transforming step includes ?uorinating the top surface and the side surfaces.20—80° C. loWer electrode temperature.21.
The feature of claim 16, Wherein the material comprising the photoresist layer is an organic-based photoresist40material based on at least one of phenolic polymers, acrylatepolymers, and alicyclic polymers.22. The method of claim 16, Wherein the photoresist layercomprises an acrylate or alicyclic polymer and the feature islithographically patterned using a 193 nm Wavelength ofradiation.23. The method of claim 16, Wherein the feature is at leastone of a conducting line, a gate for a transistor device, acontact hole, a via structure, or a trench.layer including at least one feature having a top surfaceand side surfaces;*****UNITED STATES PATENT AND TRADEMARK OFFICECERTIFICATE OF CORRECTIONPATENT NO.DATED: 6,815,359 B2: November 9, 2004Page 1 of lINVENTOR(S) : Calvin T. Gabriel and UZodinma OkoroanyanWuIt is certified that error appears in the above-identi?ed patent and that said Letters Patent ishereby corrected as shown below:Column 6Line 44, following “plasma” insert -- including ?uorine --.Column 7Line 42,28, precedingdelete “WRF”“a feature”and substitutedelete “patterned”-- W RF and substitute -- patterningColumn 8Line 2, preceding “densifier”, delete “argons” and substitute -- argonSigned and Sealed thisEighth Day of February, 2005m Watt,”JON W.
DUDASDirector ofthe United States Patent and Trademark O?‘i'ce.
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