USP_6815359 (1063533)
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US006815359B2(12) United States Patent(10) Patent N0.:(45) Date of Patent:Gabriel et al.US 6,815,359 B2Nov. 9, 2004PROCESS FOR IMPROVING THE ETCHUS. patent application Ser. No. 09/819,692, OkoroanyanWuSTABILITY OF ULTRA-THIN PHOTORESISTet al., ?led Mar. 28, 2001.(75) Inventors: Calvin T. Gabriel, Cupertino, CA (US);Uzodinma Okoroanyanwu, MountainView, CA (US)et al., ?led Mar.
28, 2001.(54)US. patent application Ser. No. 09/820,143, OkoroanyanWu(73) Assignee: Advanced Micro Devices, Inc.,Sunnyvale, CA (US)(*)Notice:Livesay, W. R., “Large—area electron—beam source,”, Journal of Vacuum Science & Technology B, vol. 11, No. 6,Nov/Dec. 1993, pp. 2304—2308, American Vacuum Society.Yang, J. J. et al, “Electron Beam Processing for Spln—onPolymers and its Applications to Back—Ena'—of—Line(BEOL) Integration, ”Materials Research Society SympoSubject to any disclaimer, the term of thispatent is extended or adjusted under 35sium Proceedings, vol.
511, 1998, pp. 49—55, MaterialsResearch Society.Ross et al, “Plasma Etch Characteristics of Electron BeamU.S.C. 154(b) by 483 days.(22) Filed:Mar. 28, 2001Processed Photoresist, ”The Society of Photo—OpticalInstrumentation Engineers, vol. 2438, 1995, pp. 803—816,SPIE—The International Society for Optical Engineering.Grl'in, Von A.
E., "Lamineszenz—photometrische Messungen(65)Prior Publication Datader Energieabsorption im Strahlangsfela' von Elektronenqaellen Eindimensionaler Fall in Luft, ”Zeitschrift fiir(21) Appl. No.: 09/819,552Naturforschung, vol. 12a, 1957,pp. 89—95, Publisher:US 2002/0142607 A1 Oct. 3, 2002Zeitschrift fiir Naturforschung; full English Translation(51)Int. Cl.7 ............................................ .. H01L 21/302(52)US.
Cl. ..................... .. 438/705; 438/706; 438/708;(58)Field of Search ............................... .. 438/705, 706,438/709; 438/710; 438/725438/708, 709, 710, 725(56)References CitedPhysics, NeW York, US, vol. 7, No. 6.Patent Abstracts of Japan, vol 1999, No. 09, Jul. 30, 1999 &JP 097328 A (Toshiba Corp), Apr. 9, 1999 abstract.Primary Examiner—Nadine G. NortonU.S. PATENT DOCUMENTS3,997,367 Aattached (11 pgs.).Chiong K.G. et al. “Resist Contrast Enhancement in HighResolution Electron Beam Lithography”, Journal of VacuumScience and Technology: Part B, American Institute ofAssistant Examiner—Binh X. Tran(74) Attorney, Agent, or Firm—Foley & Lardner LLP12/1976 Yau4,394,211 A7/1983 Uchiyama et a1. ........ ..
156/6284,446,222 A5/1984 Kress ....................... .. 430/307(57)ABSTRACT(List continued on next page.)An integrated circuit fabrication process is disclosed herein.The process includes exposing a photoresist layer to aOTHER PUBLICATIONSplasma, and transforming the top surface and the side“Deep—UV Lithography”, http://courses.nus.edu.sg/course/phyWeets/Projects98/OPTICAL/deep.html.*US.
patent application Ser. No. 09/819,342, Shields et al.,?led Mar. 28, 2001.US. patent application Ser. No. 09/819,343, Gabriel et al.,Mar. 28, 2001.US. patent application Ser. No. 09/819,344, OkoroanyanWuet al., ?led Mar. 28, 2001.surfaces of the photoresist layer to form a hardened surface.The process further includes etching the substrate in accordance With the transformed feature, Wherein an etch stabilityof the feature is increased by the hardened surface.
Thephotoresist layer is provided at a thickness less than 0.25 am,for use in deep ultraviolet lithography, or for use in extremeultraviolet lithography.23 Claims, 3 Drawing Sheets40Pattern PhotoresistDevelop PatternedPholcresist‘2/Fluorinate And/OrElectron Beam44Cure And/Or Ion /Implant DevelopedPhotoreeistEtch FluorinatedPholoreslst/46US 6,815,359 B2Page 2US. PATENT DOCUMENTS5 003 178 A,6,143,666 A3/1991 L_,250/492 3lvesay ................. ..272257232 2.3/133; iiissberg 6‘ al- ~~~~~~~~~~ -- 438/701775,510,216 A/4/1996‘mayCalabrese et a1...........
.. 430/165,747,803 A5/1998 Doong ..................... .. 250/3075 783 366 A5’876’903 A7/1998 Chen et a1‘ '4306“3/1999 Ng et a1‘ ~~~~~~~~~~~~~~~~~~ " 430/3135,928,821 A5 962 195 A’*7/1999 Garrity et a1. .............. .. 430/2310/1999 Yen et al430/316’5,965,461 A'10/1999"" "1/2001 Tao et a1. ................. ..
438/7336,197,687 B13/20016,200,903 B13/2001 Oh et a1. .................. .. 438/705430/3226’103’457 A8/2000 Gabriel' """""""" " 430/3186’1O7’172 A8/2000 Yang et""""""""" " 438/5856,110,837 A8/2000 Linliu et 211.6,121,130 A9/2000 Chua et a1. ............... .. 438/623Buynoski6,207,583 B1 *3/20016,232,048 B15/2001 Buynoskl et 81.*Dunne et a1. ............. .. 438/725.6,271,154 B18/2001 Shen et a1. ............... .. 438/7256,319,655 B1 * 11/2001 Wong et a1. ..............
.. 430/3116,358,670 B16,395,447 B16 420 097 B1Yang et a1. ............... .. 438/7175 994 225 A11/1999 Liu et a16’054’254 A * 4/2000 Sam et al11/2000 Lin et a1. .................. .. 438/7256,174,818 B1’3/2002 WOPg 6‘ ‘11' "430/2965/2002 Ishu et a1. ................ .. 430/1917/2002’6,420,702 B16,444,381 B1* cited by examiner................
.. 430/313.6,500,605 B1 * 12/20026,589,709 B1Pike et a1.7/2002 Tnpsas et al.250/3109/2002 Singh et a1. ................ .. 430/30Mullee et a1............. .. 430/3297/2003 Okoroanyanwu et a1.430/296U.S. PatentNov. 9, 2004Sheet 1 of3US 6,815,359 B2149A/10Optics/\l/163,18/12Optics24/FIG. 1//2620U.S. PatentNov. 9, 2004Sheet 2 of3US 6,815,359 B240Pattern PhotoresistDevelop Patterned // 42PhotoresistFluorinate And/OrElectron Beam44Cure And/Orlon /Implant DevelopedPhotoresistFIG.
2Etch Fluorinated / 46PhotoresistU.S. PatentNov. 9, 2004Sheet 3 of3US 6,815,359 B2US 6,815,359 B212PROCESS FOR IMPROVING THE ETCHSTABILITY OF ULTRA-THIN PHOTORESISTMoreover, feW, if any, materials or processes tailored for useWith shorter exposure Wavelengths exist.One of the problems associated With the use of organicbased photoresist materials conventionally used in 365 nmor 248 nm lithography is the high optical absorption per unitthickness at the shorter Wavelength lithographic radiation.CROSS REFERENCE TO RELATEDAPPLICATIONSThe present application is related to US. application Ser.No.
09/819,692 by OkoroanyanWu et al., ?led Mar. 28,2001, entitled “PROCESS FOR PREVENTING DEFORMATION OF PATTERNED PHOTORESIST FEATURESBY ELECTRON BEAM STABILIZATION;” U.S. application Ser. No. 09/820,143 by OkoroanyanWu et al., ?led Mar.28, 2001, entitled “IMPROVING SEM INSPECTION ANDConventional photoresist materials become increasingly10for 248 nm lithography is more than 0.5 pm.
The 248 nmANALYSIS OF PATTERNED PHOTORESIST FEATURES;” US. application Ser. No. 09/819,344 by OkoroanyanWu et al., ?led Mar. 28, 2001, entitled “PROCESS15LITHOGRAPHIC PHOTORESIST FEATURES BYMODIFICATION OF THE PHOTORESIST SURFACE;”2025FIELD OF THE INVENTIONThe present invention relates generally to integrated circuit (IC) fabrication. More particularly, the present invention30relates to a process for improving the etch stability ofultra-thin photoresist utiliZed in IC fabrication.35increasing the etch stability of photoresists used in 193 nmapplication or ultra-thin photoresists.40increasing an etch stability of a photoresist layer. Themethod includes providing the photoresist layer at a thick45 ness less than 0.25 pm, for use in vacuum ultravioletvided through or re?ected off a mask or reticle to form anlithography, deep ultraviolet lithography, or extreme ultraviolet lithography.
The method further includes exposing thephotoresist layer to a plasma, and transforming the exposedimage on a semiconductor Wafer. Generally, the image isfocused on the Wafer to expose and pattern a layer ofsurfaces to form a hardened shell. The photoresist layer50includes exposed surfaces, and the hardened shell increasesthe etch stability of the photoresist layer.integrated circuits (ICs) to one or more layers of the semiconductor Wafer.
The photoresist material can also de?neconductive lines or conductive pads associated With metallayers of an integrated circuit. Further, the photoresist mateBRIEF SUMMARY OF THE INVENTIONOne exemplary embodiment relates to a method oflithographic performance.material, such as, photoresist material. In turn, the photoresist material is utiliZed to de?ne doping regions, depositionregions, etching regions, or other structures associated Withlithographic applications in the vacuum ultraviolet (VUV),length range. There is a further need for a process fordevices on a smaller chip area to achieve greater functionWith conventional lithography systems, radiation is prosuccessfully transfer the pattern to underlying layers. Inother Words, thinner layers of photoresist material sufferfrom the disadvantage of loW or insufficient etch stability.deep ultraviolet (DUV), or extreme ultraviolet (EUV) Waveintegrated circuits (ICs) With higher and higher densities ofality and to reduce manufacturing costs.
This desire for largescale integration has led to a continued shrinking of circuitdimensions and device features. The ability to reduce thesiZe of structures, such as, gate lengths in ?eld-effect transistors and the Width of conductive lines, is driven byprocesses, e.g., resist trimming and/or etch processes.Unfortunately, When a thinner layer of photoresist materialis used, such as, photoresists in 193 nm application orultra-thin photoresists, there may not be enough photoresistmaterial remaining after consumption to maintain patternintegrity, survive subsequent processes, and/or With Which toThus, there is a need for a process for effectively extending the use of conventional photoresist materials for shorterBACKGROUND OF THE INVENTIONThe semiconductor or IC industry aims to manufactureat a thickness of 0.4 to 0.3 pm. For even shorter lithographicWavelengths or to further enhance 193 nm lithography,ultra-thin resists (UTRs) are used, Which are conventionalphotoresist materials provided at a thickness of less than0.25 pm.thickness) is typically consumed during IC fabricationentitled “SELECTIVE PHOTORESIST HARDENING TOthe Assignee of the present application.mers.
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