USP_20010020443 (1063353), страница 4
Текст из файла (страница 4)
The apparatus 210can separate the other gases into an internal volume and ancan further include a collection vessel 220 disposed annuexternal volume. Accordingly, the invention is not limitedlarly around the drive shaft 232 and the substrate 112 tocollect ?uid and to exhaust air, also in a manner generallysimilar to that discussed above With reference to FIG. 3.except as by the appended claims.[0033]The barrier 240 can include a barrier shaft 247 thatextends upWardly and annularly around a liquid supplyconduit 223. The barrier shaft 247 can be coupled to a motor249 (for example, via gears 248a and 248b) to rotate thebarrier 240.
Accordingly, the barrier 240 can rotate at a rateindependent of the rate at Which the substrate 112 and thesubstrate support 233 rotate. In one aspect of this embodiment, the rate at Which the barrier 240 rotates can bematched to the rate at Which the substrate 112 rotates so thatan internal air volume 260 Within the barrier 240 rotates Withthe barrier 240 and the substrate 112, While an external air1. A method for applying a liquid to a microelectronicsubstrate having a ?rst surface and a second surface facingopposite the ?rst surface, comprising:supporting the substrate by engaging less than the entiresecond surface of the microelectronic substrate;disposing the liquid on the ?rst surface of the microelectronic substrate;rotating the support and the microelectronic substrateabout a rotation axis at a ?rst rate to distribute the liquidover the ?rst surface of the microelectronic substrate;andSep. 13, 2001US 2001/0020443 A1separating a rotating ?rst volume of gas adjacent the ?rstsurface of the microelectronic substrate from a generally stationary second volume of gas proximate to the?rst volume of gas by positioning a barrier betWeen the?rst and second volumes and rotating the barrier at asecond rate approximately equal to the ?rst rate Withoutrotating a vessel positioned beneath the microelectronicsubstrate to collect a portion of the liquid falling fromthe microelectronic substrate.2.
The method of claim 1 Wherein rotating the barrierincludes rotating the barrier at from about 2,000 rpm to15. The method of claim 1 Wherein distributing the liquidto a generally uniform thickness includes forming a liquidlayer having a thickness that varies by no greater than aboutten Angstroms.16. A method for applying liquid to a generally circularmicroelectronic substrate having a diameter greater thanapproximately eight inches, the method comprising:supporting a loWer surface of the microelectronic substrate;disposing a single liquid having a generally uniformabout 4,000 rpm and distributing the liquid includes formingviscosity on an upper surface of the microelectronica liquid layer having a thickness variation in the range offrom about ten Angstroms to about thirty Angstroms, furthercomprising selecting the microelectronic substrate to have acircular planform shape With a diameter of about tWelveinches.3.
The method of claim 1 Wherein disposing the liquid onthe ?rst surface of the microelectronic substrate includesplacing the liquid on the ?rst surface before rotating thesubstrate facing opposite the loWer surface;distributing the liquid over the upper surface to a generally uniform thickness ranging from a ?rst value to asecond value approximately 3,000 Angstroms greaterthan the ?rst value by rotating the microelectronicsubstrate at a ?rst rate about a rotation axis of themicroelectronic substrate and rotating a barrier spacedapart from the upper surface of the microelectronicmicroelectronic substrate, and positioning the barrierincludes placing the barrier proximate to the substrate afterthe substrate is rotating at the ?rst rate, further comprisingaccelerating both the microelectronic substrate and the barrier to rotate about the rotation axis at a third rate greaterthan the ?rst rate.substrate about the rotation axis at a second rateapproximately equal to the ?rst rate to rotate a volumeof air betWeen the barrier and the upper surface of themicroelectronic substrate at approximately the ?rstrate.4.
The method of claim 1, further comprising removing17. The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfacethe barrier from betWeen the rotating volume of gas and theto a generally uniform thickness having a value fromgenerally stationary volume of gas after moving the liquidapproximately 5,000 Angstroms to approximately 8,000over the surface of the microelectronic substrate.Angstroms.5.
The method of claim 1 Wherein disposing the liquidincludes directing a stream of liquid through an opening in18. The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfacethe barrier toWard the substrate.6. The method of claim 1, further comprising exhaustinggas betWeen the barrier and the substrate through a ?rstto a generally uniform thickness of having a value fromapproximately 7,000 Angstroms to approximately 10,000Angstroms.shield.7. The method of claim 1 Wherein disposing the liquid onthe microelectronic substrate includes disposing a photore19. The method of claim 16 Wherein rotating the microelectronic substrate includes rotating the microelectronicsubstrate at up to approximately 4,000 resolutions perminute.20.
The method of claim 16, further comprising selectinga viscosity of the liquid to be from about ?ve centipoise andsist material on the microelectronic substrate.about tWenty centipoise.opening in the barrier and introducing gas betWeen thebarrier and the substrate through a second opening in the8. The method of claim 1 Wherein rotating the microelectronic substrate includes rotating the microelectronic substrate at up to approximately 4,000 revolutions per minute.9. The method of claim 1, further comprising selecting aviscosity of the liquid to be from about ?ve centipoise toabout tWenty centipoise.21. The method of claim 16, further comprising selectingthe liquid to include a photoresist material.22.
The method of claim 16 Wherein disposing the liquidincludes directing the liquid through an aperture in thebarrier.23. The method of claim 16 Wherein disposing the liquid10. The method of claim 1 Wherein disposing the liquidoccurs after a volume of air betWeen the microelectronicoccurs after a volume of air betWeen the microelectronicsubstrate and the barrier rotates at approximately the ?rstsubstrate and the barrier rotates at approximately the ?rstrate.rate.11. The method of claim 1 Wherein disposing the liquidoccurs before rotating the microelectronic substrate.12. The method of claim 1, further comprising selectingthe microelectronic substrate to have an approximatelycircular planform shape and a diameter greater than eightinches.13. The method of claim 1, further comprising rinsing theloWer surface of the substrate With a rinse solution.14.
The method of claim 13, further comprising controlling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.24. The method of claim 16 Wherein disposing the liquidoccurs before rotating the microelectronic substrate.25. The method of claim 16, further comprising rotatingthe substrate at an initial rate loWer than the ?rst rate beforedisposing the liquid on the substrate and before rotating thesubstrate at the ?rst rate.26. The method of claim 16, further comprising rinsingthe loWer surface of the substrate With a rinse solution.27. The method of claim 26, further comprising controlling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.28.
The method of claim 26 Wherein distributing theliquid to a Generally uniform thickness includes forming aSep. 13, 2001US 2001/0020443 A1liquid layer having a thickness variation in the range of fromabout ten Angstroms to about thirty Angstroms.29. A method for applying a liquid to a microelectronicsubstrate having an upper surface and a loWer surfaceopposite the upper surface, the method comprising:selecting the microelectronic substrate to have a diametergreater than eight inches;supporting the loWer surface of the microelectronic substrate;disposing on the upper surface of the microelectronicsubstrate a liquid having a viscosity in the range ofabout ?ve centipoise to about tWenty centipoise;rotating the microelectronic substrate at a ?rst rate of upto about 4,000 revolutions per minute to distribute theliquid over the surface of the microelectronic substrateto an approximately uniform thickness of from about5,000 Angstroms to about 10,000 Angstroms; androtating a barrier spaced apart from the surface of themicroelectronic substrate at a second rate approximately equal to the ?rst rate to rotate a volume of airbetWeen the barrier and the upper surface of the microelectronic substrate at approximately the ?rst rate.30.
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