USP_6872254 (1063349)
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US006872254B2(12) United States Patent(10) Patent N0.2Shirley(54)(45) Date of Patent:METHOD AND APPARATUS FORCONTROLLING AIR OVER A SPINNING5,472,502 A5,518,542 AMICROELECTRONIC SUBSTRATE5,658,615 A_-Inventor‘.--5,695,817 APaul D‘ Shlrley’ Mendlan’ ID (Us)_.*(*)Notlcel* 12/19976,063,190 A6,103,680 A(Us)6,159,288 A___8/1997 Hasebe et al. ...... ..427/24011/1997 Motoda et al.118/52Tateyama et al. .427/2405,985,357 A * 11/1999 Sanada ................. .. 427/8.(73) Asslgnee' Mlcmn Technology’ Inc" B0156’ ID_Mar. 29, 200512/1995 Batchelder ................. .. 118/525/1996 Matsukawa et al. ..118/525,688,322 A(75)US 6,872,254 B2_5/2000Hasebe etal.118/528/2000 Honda 61 al.12/2000Satou et al.510/178......118/703/2001.427/425SubJect to any dlsclalmeh the term ofthls6,221,787 B14/2001 Ogata .............
..438/758patent is extended or adjusted under 35U.S.C. 154(b) by 0 days.6,284,043 B16,361,600 B1 *9/2001 Takekuma ...... ..118/523/2002 Tateyama et al. ........... .. 118/566,576,055 B2 *6/2003(21) Appl. No.: 10/458,419Takeshita et al.. . . ..6,197,385 B1Shirley ......................
.. 118/52* cited by examiner(22) Filed:Jun‘ 9’ 2003Primary Examiner—Christopher A. Fiorilla(65)Prior Publication DataAssistant Examiner—George R. Koch, III(74) Attorney, Agent, or Firm—Dorsey & WhitneyUS 2003/0211232 A1 Nov. 13, 2003RltdU.S.Aea e(60)(51)(52)(58)l't'pp lca Ion(57)Dta aABSTRACTA method and apparatus for forming a generally uniformContinuation of application NO_ 09/859,601’ ?led on Mayliquid layer on a surface of an'upper surface microelectronic16, 2001, now Pat, No, 6,576,055, which is a division ofsubstrate. The apparatus can mclude a support that engagesapplication No- 09/384,830, ?led onAug- 27, 1999, now Pat-less than the entire loWer surface of the microelectronicN°~ 672617635Int.
Cl.7 ........................ .. B05C 13/00; B05C 15/00US. Cl. ........................... .. 118/52; 118/56; 118/64;118/70Field Of Search ........................... .. 118/52, 320, 56,substrate and rotates the microelectronic substrate at aSelected rate- Abarrier can extend Over the upper Surface ofthe microelectronic Substrate and can rotate at about thesame rate as the substrate to separate a rotating air massadjacent to the upper Surface and Within the barrier from a118 501 500 504 50 64 72 315, 427 240stationary air mass external to the barrier.
The rotating air/(56)’’’’125’ 782’ 409/ 758’mass can reduce the likelihood for liquid/air interface disturbances that create non-uniformities in the liquid layer.References CitedAccordingly, the method'and apparatus can increase theU-S- PATENT DOCUMENTSrange of thicknesses to Which the liquid layer can be formedand can reduce the topographical non-uniformities of the4,800,836 A1/1989 Yamamoto et al.
......... .. 118/525,211,753 A5/1993 Swain ............. ..5,238,713 A8/1993 Sago et al. ............... .. 427/240hquld layer'118/5211 Claims, 4 Drawing Sheets210250L0U.S. PatentMar. 29,2005Sheet 2 of4US 6,872,254 B210020aFI' . 2(P115 Art)U.S. PatentMar. 29, 2005US 6,872,254 B2Sheet 3 0f 47231/0124 14aI25r4‘5 ]//— I5014/ '50144 I 35I45"/13'113112777-I46I20I26\150127CDFig.3U.S. PatentMar. 29,2005Sheet 4 of4US 6,872,254 B2225223242249P1/EQl I2/0!260£0220US 6,872,254 B212Another draWback With this technique is that the convecMETHOD AND APPARATUS FORCONTROLLING AIR OVER A SPINNINGMICROELECTRONIC SUBSTRATEtive heat transfer rate can vary over the surface of thesubstrate because the relative linear velocity betWeen thesubstrate and the adjacent air mass varies With the distancefrom the substrate center.
The variation in heat transfer ratesCROSS-REFERENCE TO RELATEDAPPLICATIONScan cause the surface temperature of the substrate to vary, inturn causing the evaporation rate of the ?uid (and thereforeThis application is a continuation of US. patent application Ser. No.
09/859,601, ?led May 16, 2001, issued Jun. 10,2003 as US. Pat. No. 6,576,055 B2, Which is a divisional ofUS. patent application No. Ser. 09/384,830, Aug. 27, 1999,10issued Jul. 17, 2001 as US. Pat. No. 6,261,635 B1.TECHNICAL FIELDThe present invention is directed toWard methods andapparatuses for controlling the movement of air over a15the thickness of the ?uid) to vary over surface of thesubstrate.Yet another draWback With this technique is that theviscosity selected for the liquid photoresist material mustaccount for the diameter and rotation speed of the substrate.For example, a relatively viscous liquid may be selected forlarge substrates to prevent the liquid from ?ying off theedges of the substrate before accumulating to the desiredthickness. Such a liquid may be too viscous for smallerspinning microelectronic substrate, for example duringsubstrates. Accordingly, conventional techniques typicallyapplication of a liquid to the microelectronic substrate.use liquids With different viscosities to form layers havingdifferent thicknesses.
For example, less viscous liquids canBACKGROUND OF THE INVENTION20approach is that it requires controlling and/or adjusting theviscosity of the liquid and/or providing multiple sources ofthe liquid, each having a different viscosity. Furthermore,displays, etching processes are often used to form featureson a microelectronic substrate or substrate assembly thatforms the foundation of the device. A typical etching technique includes depositing a layer of a photoresist material on25the substrate, masking selected portions of the layer andexposing the unmasked portions to a selected radiation. Theselected radiation changes the solubility of the unmaskedportions to become either soluble (in the case of a positivephotoresist) or insoluble (in the case of a negativebe used to form thinner layers and more viscous liquids canbe used to form thicker layers.
One problem With thisDuring the manufacture of microelectronic devices, suchas memory chips, processor chips and ?eld emissionWhile the angular velocity of the substrate can be used tocontrol the thickness of the liquid layer (for example, byincreasing the angular velocity to reduce the layerthickness), this technique is limited because at high angularvelocities, the liquid can form Waves or other disturbances,30as discussed above.FIG. 1 is a partially schematic, partially cutaWay sidephotoresist) When exposed to a selected solvent. The phoelevation vieW of a conventional device 10 that can addresstoresist layer is then Washed With the selected solvent toremove either the exposed or unexposed photoresistmaterial, exposing a portion of the substrate beneath.
TheThe device 10 includes a motor 30 having a shaft 3235 connected to a chuck 33 and a boWl 20. A substrate 12substrate is Washed With an etchant that removes materialhaving a rectangular planform shape is releasably mountedfrom the exposed portions of the substrate While leavingintact the portions of the substrate covered by the photoresistto the chuck 33 and both the substrate 12 and the boWl 20spin as the shaft 32 rotates. Accordingly, the air adjacent tothe substrate 12 is partially contained Within the spinningboWl 20 so that at least a portion of the air Will spin at thematerial.It is often important to control the uniformity of thethickness to Which the photoresist material is deposited onthe substrate.
For example, if the photoresist material isdeposited to a nonuniform thickness, certain portions of thephotoresist material may be overexposed to the radiationWhile other portions may be underexposed. Where thephotoresist material is overexposed, the edges betWeen themasked and unmasked regions can become blurred, makingthe process unsuitable for forming very, small features.Where the photoresist material is underexposed, it may nothave suf?cient exposure time to change solubility.Furthermore, it may be desirable to keep the overall thickness of the photoresistant layer relatively small to increasethe resolution of the features formed With this technique.The photoresist material is typically deposited on thesubstrate or substrate assembly by disposing the material inliquid form at the center of the substrate and spinning thesubstrate about its center to spread the material outWardly bycentrifugal force.
One draWback With this technique is thatthe liquid photoresist material can interact With the adjacentair mass, creating Waves or other disturbances in the phosome of the foregoing problems for rectangular substrates.40same rate as the substrate 12. A ?uid supply conduit 23disposes a liquid onto the substrate 12 through an aperture24 and the liquid spreads out over the surface of the substrate12 as the substrate 12 spins. Excess liquid is collected in the45 boWl 20 as it runs over the edges of the substrate 12 and canbe removed from the boWl via a drain 21. Air can beexhausted from the boWl 20 through an exhaust port 22.One potential draWback With the device 10 shoWn in FIG.1 is that the boWl 20 can be heavy and dif?cult to spin50smoothly at high rates of speed.
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