Диссертация (1149415), страница 22
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-1993. - 54. - C. 181-342.13596. Stöhr, J. NEXAFS Spectroscopy: монография / J. Stöhr. - Berlin: Springer,1992. – 348 с.97. Hähner, G. Near edge X-ray absorption fine structure spectroscopy as a tool toprobe electronic and structural properties of thin organic films and liquids //Chemical Society Reviews. - 2006. - 35. - C. 1244–1255.98. Sutherland, D.G.J.
[и др.] Stoichiometry reversal in the growth of thinoxynitride films on Si(100) surfaces // Journal of Applied Physics. - 1995. - 78. С. 6761-6769.99. Ландау Л.Д., Лифшиц Е.М. Теоретическая физика: Учеб. пособ.: Длявузов. В 10 т. Т. IV / В. Б. Берестецкий, Е. М. Лифшиц, Л. П. Питаевский.Квантовая электродинамика. - 4-е изд., испр. - М.: ФИЗМАТЛИТ, 2002. - 720с.100. Ландау Л.Д., Лифшиц Е.М. Курс теоретической физики: Учеб. пособ.:Для вузов. В 10 т. Т. III. Квантовая механика (нерелятивистская теория).
- 6-еизд., испр. - М.: ФИЗМАТЛИТ, 2004. - 800 с.101. Yeh, J.J. [и др.] Atomic subshell photoionization cross sections andasymmetry parameters: 1≤Z≤103 // Atomic Data and Nuclear Data Tables. - 1985.- 32. - C. 1-155.102. Фелдман, Л., Основы анализа поверхности и тонких пленок: монография/ Л. Фелдман, Д. Майер. - М.: Мир, 1989. - 344 c.103. Tanuma, S.
[и др.] Calculations of electron inelastic mean free paths. V. datafor 14 organic compounds over the 50–2000 eV range // Surface and interfaceanalysis. -1994. - 21. - C. 165-176.104. Tanuma, S. [и др.] Calculation of electron inelastic mean free paths (IMFPs)VII. Reliability of the TPP-2M IMFP predictive equation // Surface and InterfaceAnalysis.
- 2003. - 35. C. 268–275.105. Strehlow, W.H. [и др.] Compilation of energy band gaps in elemental andbinary compound semiconductors and insulators // Journal of Physical andChemical Reference Data. - 1973. - 2. - C. 163-199.106. Tanuma, S. [и др.] Calculations of electron inelastic mean free paths(IMFPS).
IV. Evaluation of calculated IMFPs and of the predictive IMFP formulaTPP-2 for electron energies between 50 and 2000 eV // Surface and InterfaceAnalysis. - 1993. - 20. - C. 77–89.136107. Fedoseenko, S.I. [и др.] Development and present status of the RussianGerman soft X-ray beamline at BESSY II // Nuclear Instruments and Methods inPhysics Research A.
- 2001. - 470. - C. 84–88.108.http://www.specs.de/cms/upload/PDFs/SPECS_Prospekte/phoibos_katalog_72dpi.pdf109. Seah, M.P., Summary of ISO/TC 201 standard: VII ISO 15472 : 2001 surface chemical analysis - X-ray photoelectron spectrometers - calibration ofenergy scales // Surface and Interface Analysis. -2001. -31. - C. 721-723.110.
Helander, M.G. [и др.] Note: binding energy scale calibration of electronspectrometers for photoelectron spectroscopy using a single sample // Review ofScientific Instruments. - 2011. - 82. - С. 096107-096110.111. Schäfers, F. [и др.] KMC-1: A high resolution and high flux soft x-raybeamline at BESSY // Review of Scientific Instruments. - 2007. - 78. - C.
123102123115.112. Gorgoi, M. [и др.] The high kinetic energy photoelectron spectroscopyfacility at BESSY progress and first results // Nuclear Instruments and Methods inPhysics Research A. - 2009. - 601. - C. 48–53.113. Sawhney, K.J.S. [и др.] A novel undulator-based PGM beamline forcircularly polarised synchrotron radiation at BESSY II // Nuclear Instruments andMethods in Physics Research A. - 1997. - 390. - C.
395-402.114. Weiss, M.R. [и др.] The elliptically polarized undulator beamlines at BESSYII // Nuclear Instruments and Methods in Physics Research A. - 2001. - 467-468. C. 449-452.115. Тарачева, Е.Ю. Отражение поляризованного рентгеновского излученияпространственно анизотропными структурами.: дис...
канд. физ.-мат. наук.:01.04.07 (2005), СПб., СПбГУ.116. Schaefers, F. [и др.] Soft-x-ray polarimeter with multilayer optics: completeanalysis of the polarization state of light // Applied Optics. - 1999. - 38. - C. 40744088.117. Eggenstein, F. [и др.] A reflectometer for at-wavelength characterization ofgratings // Nuclear Instruments and Methods. - 2013. - A710. - C.
166–171.137118. Schäfers, F. [и др.] The At-Wavelength Metrology Facility at BESSY-II //Journal of large-scale research facilitiesю - 2016. - 2. - A50.119. Smirnov, E.A. [и др.] Evaluation of a new advanced low-k material //Japanese Journal of Applied Physics. - 2011. - 50. - 05EB03.120. Jousseaume, V. [и др.], Ultra-low-k by CVD: deposition and curing, in: M. R.Baklanov, P. Ho, E. Zschech (Eds.), Advanced Interconnects for ULSITechnology, Wiley, Chichester, 2012, p. 35.121. Li, D.
[и др.] X-ray absorption spectroscopy of silicon dioxide (SiO2)polymorphs: the structural characterization of opal // American mineralogist. 1994. - 79. - C. 622-632.122. Tanaka, I. [и др.] X-ray-absorption fine structure of crystalline silicondioxides // Physical review B. -1995. - 52. - C. 11733-11739.123. Filatova, E.O. [и др.] Fine-structure of absorption 2P-spectra of siliconcompounds // Physics of the solid state. - 1985. - 27.
- C. 606-609.124. Sutherland, D.G.J. [и др.] Si L- and K-edge X-ray-absorption near-edgespectroscopy of gas-phase Si(CH3)x(OCH3)4-x: models for solid-state analogs //Physical review B. - 1993. - 48. - C. 14989-15001.125. Urquhart, S.G. [и др.] Inner-shell spectroscopy of compounds containingSi-Si bonds: is there a localized, low-energy Si-Si resonance? // Chemical physics.- 1994. - 189.
- C. 757-768.126. Lenardi, C. [и др.] Near-Edge X-ray absorption fine structure and ramancharacterization of amorphous and nanostructured carbon films // Journal ofapplied physics. - 1999. - 85. - C. 7159-7167.127. Batson, P.E. Carbon 1s near-edge-absorption fine structure in graphite //Physical review B. - 1993. - 48. - C. 2608-2610.128.
Филатова, Е.О. [и др.] Глубина формирования отраженного пучкамягкого рентгеновского излучения в условиях зеркального отражения //Физика твердого тела. - 1998. - 40. - С. 1360-1363.129. Filatova, E. [и др.] Optical constants of amorphous SiO2 for photons in therange of 60–3000 eV // Journal of Physics: Condensed Matter. - 1999. - 11. - C.3355-3370.138130. Filatova, E.O. [и др.] Optical constants of crystalline HfO2 for energyrange 140–930 eV // Applied Optics. - 2010.
- 49. - C. 2539-2546.131. Grill, A. [и др.] Interface engineering for high interfacial strength betweenSiCOH and porous SiCOH interconnect dielectrics and diffusion caps // Journal ofapplied physics. - 2008. - 103. - C. 054104-054109.132. Iacopi, F.
[и др.] Challenges for structural stability of ultra-low-k-basedinterconnects // Microelectronic engineering. - 2004. - 75. - C. 54–62.133. Hitchcock, A.P. [и др.] Carbon K-shell electron energy loss spectra of 1and 2-butenes, trans-1,3-butadiene, and perfluoro-2-butene. carbon-carbon bondlengths from continuum shape resonances // Journal of Chemical Physics. - 1984. 80. - C. 3927-3935.134. Cottrell, T.L. The strengths of chemical bonds: монография / T.L.
Cottrell.- London: Butterworths Publications Ltd, 1958. - 310 c.135. Darwent, B. B. National standard reference data series: монография / B.B.Darwent. - Washington: National Bureau of Standards, 1970.136. Gago, R. [и др.] Evolution of sp2 networks with substrate temperature inamorphous carbon films: experiment and theory // Physical review B. - 2005. - 72.- С. 014120.137. Konashuk, A.
[и др.] Effect of deposition technique on chemical bondingand amount of porogen residues in organosilicate glass // MicroelectronicEngineering. - 2017. - 178. - C. 209-212.138. Diaz, J. [и др.] Analysis of the π* and σ* bands of the X-ray absorptionspectrum of amorphous carbon // Physical review B. - 2001. - 64. - C. 125204.139. Outka, D.A. [и др.] NEXAFS studies of complex alcohols and carboxylicacids on the Si(111)(7˟7) surface // Surface science. - 1987. - 185. - C. 53-74.140. Jaouen, M. [и др.] A NEXAFS characterization of ion-beam-assistedcarbon-sputtered thin films // Diamond and related materials.
- 1995. - 4. - C. 200206.141. Wu, Z.Y. [и др.] Electronic structure analysis of α-SiO2 via X-rayabsorption near-edge structure at the Si K, L2,3 and O K edges // Journal of physics:condensed matter. - 1998. - 10. - C. 8083–8092.139142. Tsai, H.M. [и др.] Enhancement of Si–O hybridization in low-temperaturegrown ultraviolet photo-oxidized SiO2 film observed by X-ray absorption andphotoemission spectroscopy // Journal of applied physics. - 2008. - 103. - C.013704-013707.143. Gross, Th. [и др.] An XPS analysis of different SiO2 modificationsemploying a C 1s as well as an Au 4f7/2 static charge reference // Surface andinterface analysis. - 1992.
- 18. - C. 59-64.144. Himpsel, F.J. [и др.] Microscopic structure of the SiO2/Si interface //Physical review B. - 1988. - 38. - C. 6084.145. Onneby, C. [и др.] Silicon oxycarbide formation on SiC surfaces and at theSiC/SiO2 interface // Journal of vacuum science & technology A. - 1997. - 15. - C.1597- 1602.146. Lanfant, B. [и др.] Effects of carbon and oxygen on the spark plasmasintering additive-free densification and on the mechanical properties ofnanostructured SiC ceramics // Journal of the European ceramic society. - 2015. 35.
- C. 3369-3379.147. Fujimoto, A. [и др.] Origins of sp3C peaks in C1s X‑ray photoelectronspectra of carbon materials // Analytical Chemistry. - 2016. - 88. - C. 6110−6114.148. Mezzi, A. [и др.] Surface investigation of carbon films: from diamond tographite // Surface and interface analysis. - 2010. - 42.