USP_20030211232 (1063357), страница 4
Текст из файла (страница 4)
The method of claim 1 Wherein distributing the liquidto a generally uniform, thickness includes forming a liquidlayer having a thickness that varies by no greater than aboutten Angstroms.16. A method for applying liquid to a generally circularmicroelectronic substrate having a diameter greater thanapproximately eight inches, the method comprising:supporting a loWer surface of the microelectronic substrate;disposing a single liquid having a generally uniformabout 4,000 rpm and distributing the liquid includes formingviscosity on an upper surface of the microelectronica: liquid layer having a thickness variation in the range offrom about ten Angstroms to about thirty Angstroms, furthercomprising selecting the microelectronic substrate to have acircular planform shape With a diameter of about tWelveinches.3. The method of claim 1 Wherein disposing the liquid onthe ?rst surface of the microelectronic substrate includesplacing the liquid on the ?rst surface before rotating thesubstrate facing opposite the loWer surface;distributing the liquid over the upper surface to a generally uniform thickness ranging from a ?rst value to asecond value approximately 3,000 Angstroms greaterthan the ?rst value by rotating the microelectronicsubstrate at a ?rst rate about a rotation axis of themicroelectronic substrate and rotating a barrier spacedapart from the upper surface of the microelectronicmicroelectronic substrate, and positioning the barrierincludes placing the barrier proximate to the substrate afterthe substrate is rotating at the ?rst rate, further comprisingaccelerating both the microelectronic substrate and the barrier to rotate about the rotation axis at a third rate greaterthan the ?rst rate.substrate about the rotation axis at a second rateapproximately equal to the ?rst rate to rotate a volumeof air betWeen the barrier and the upper surface of themicroelectronic substrate at approximately the ?rstrate.4.
The method of claim 1, further comprising removing17. The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfacethe barrier from betWeen the rotating volume of gas and theto a generally uniform thickness having a value fromgenerally stationary volume of gas after moving the liquidapproximately 5,000 Angstroms to approximately 8,000over the surface of the microelectronic substrate.Angstroms.5.
The method of claim 1 Wherein disposing the liquidincludes directing a stream of liquid through an opening in18. The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfacethe barrier toWard the substrate.6. The method of claim 1, further comprising exhaustinggas betWeen the barrier and the substrate through a ?rstto a generally uniform thickness of having a value fromapproximately 7,000 Angstroms to approximately 10,000Angstroms.shield.7. The method of claim 1 Wherein disposing the liquid onthe microelectronic substrate includes disposing a photore19.
The method of claim 16 Wherein rotating the microelectronic substrate includes rotating the microelectronicsubstrate at up to approximately 4,000 revolutions perminute.20. The method of claim 16, further comprising selectinga viscosity of the liquid to be from about ?ve centipoise andsist material on the microelectronic substrate.about tWenty centipoise.opening in the barrier and introducing gas betWeen thebarrier and the substrate through a second opening in the8.
The method of claim 1 Wherein rotating the microelectronic substrate includes rotating the microelectronic substrate at up to approximately 4,000 revolutions per minute.9. The method of claim 1, further comprising selecting aviscosity of the liquid to be from about ?ve centipoise toabout tWenty centipoise.21. The method of claim 16, further comprising selectingthe liquid to include a photoresist material.22.
The method of claim 16 Wherein disposing the liquidincludes directing the liquid through an aperture in thebarrier.23. The method of claim 16 Wherein disposing the liquid10. The method of claim 1 Wherein disposing the liquidoccurs after a volume of air betWeen the microelectronicoccurs after a volume of air betWeen the microelectronicsubstrate and the barrier rotates at approximately the ?rstsubstrate and the barrier rotates at approximately the ?rstrate.rate.11. The method of claim 1 Wherein disposing the liquidoccurs before rotating the microelectronic substrate.12.
The method of claim 1, further comprising selectingthe microelectronic substrate to have an approximatelycircular planform shape and a diameter greater than eightinches.13. The method of claim 1, further comprising rinsing theloWer surface of the substrate With a rinse solution.14.
The method of claim 13, further comprising controlling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.24. The method of claim 16 Wherein disposing the liquidoccurs before rotating the microelectronic substrate.25.
The method of claim 16, further comprising rotatingthe substrate at an initial rate loWer than the ?rst rate beforedisposing the liquid on the substrate and before rotating thesubstrate at the ?rst rate.26. The method of claim 16, further comprising rinsingthe loWer surface of the substrate With a rinse solution.27. The method of claim 26, further comprising controlling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.28. The method of claim 26 Wherein distributing theliquid to a generally uniform thickness includes forming aNov.
13, 2003US 2003/0211232 A1liquid layer having a thickness variation in the range of fromabout ten Angstroms to about thirty Angstroms.29. A method for applying a liquid to a microelectronicsubstrate having an upper surface and a loWer surfaceopposite the upper surface, the method comprising:selecting the microelectronic substrate to have a diametergreater than eight inches;supporting the loWer surface of the microelectronic substrate;disposing on the upper surface of the microelectronicsubstrate a liquid having a viscosity in the range ofabout ?ve centipoise to about tWenty centipoise;rotating the microelectronic substrate at a ?rst rate of upto about 4,000 revolutions per minute to distribute theliquid over the surface of the microelectronic substrateto an approximately uniform thickness of from about5,000 Angstroms to about 10,000 Angstroms; androtating a barrier spaced apart from the surface of themicroelectronic substrate at a second rate approximately equal to the ?rst rate to rotate a volume of airbetWeen the barrier and the upper surface of the microelectronic substrate at approximately the ?rst rate.30.
The method of claim 29 Wherein rotating the microelectronic substrate occurs Without rotating a collectingvessel positioned beneath the loWer surface of the microelectronic substrate to collect liquid ?oWing from the microelectronic substrate.electronic substrate from a second portion of gasspaced apart from the microelectronic substrate andgenerally stationary relative to the microelectronic substrate.36. The apparatus of claim 35 Wherein the supportincludes a ?ange facing toWard the second surface of themicroelectronic substrate and extending radially outWardlyfrom the rotation axis, the barrier being spaced apart fromthe ?ange to de?ne a gap betWeen the ?ance and the barrierfacing toWard the second surface of the microelectronicsubstrate, the apparatus further comprising a plurality ofnoZZles positioned proximate to the gap to direct a cleaningsolution toWard the second surface of the microelectronicsubstrate.37. The apparatus of claim 35 Wherein the supportincludes a ?ange facing toWard the second surface of themicroelectronic substrate and extending radially outWardlyfrom the rotation axis, the barrier being spaced apart fromthe ?ange to de?ne a gap betWeen the ?ange and the barrierfacing toWard the second surface of the microelectronicsubstrate, the apparatus further comprising:a plurality of noZZles positioned proximate to the gap andcoupled to a source of cleaning solution to direct thecleaning solution toWard the second surface of themicroelectronic substrate;a temperature controller coupled to the source of cleaningsolution to control a temperature of the cleaning solution; and31.
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