USP_6261635 (1063343), страница 4
Текст из файла (страница 4)
The method of claim 1, further comprising removing112 so that the barrier 240 can be lifted upWardly to accessthe barrier from betWeen the rotating volume of gas and thethe substrate 112, for example to remove the substrate 112after the liquid is disposed on the substrate 112.
In a furtheraspect of this embodiment, the barrier 240 can be lifted Withover the surface of the microelectronic substrate.generally stationary volume of gas after moving the liquid60a control arm 242 having a positioning head 243 in a mannergenerally similar to that discussed above With reference toFIG. 3 Alternatively, the barrier shaft 247 can be directly6. The method of claim 1, further comprising exhaustingcoupled to an axial actuator 225 to move the barrier 240upWardly and doWnWardly.A feature of the apparatus shoWn in FIG.
4 is that thebarrier 240 can be rotated independently of the substrate5. The method of claim 1 Wherein disposing the liquidincludes directing a stream of liquid through an opening inthe barrier toWard the substrate.gas betWeen the barrier and the substrate through a ?rst65opening in the barrier and introducing gas betWeen thebarrier and the substrate through a second opening in theshield.US 6,261,635 B191021. The method of claim 16, further comprising selecting7.
The method of claim 1 wherein disposing the liquid onthe microelectronic substrate includes disposing a photorethe liquid to include a photoresist material.22. The method of claim 16 Wherein disposing the liquidsist material on the microelectronic substrate.8. The method of claim 1 Wherein rotating the microelectronic substrate includes rotating the microelectronic substrate at up to approximately 4,000 revolutions per minute.9. The method of claim 1, further comprising selecting aviscosity of the liquid to be from about ?ve centipoise toincludes directing the liquid through an aperture in thebarrier.23.
The method of claim 16 Wherein disposing the liquidoccurs after a volume of air betWeen the microelectronicsubstrate and the barrier rotates at approximately the ?rstabout tWenty centipoise.10. The method of claim 1 Wherein disposing the liquidoccurs after a volume of air betWeen the microelectronicrate.10substrate and the barrier rotates at approximately the ?rst24. The method of claim 16 Wherein disposing the liquidoccurs before rotating the microelectronic substrate.rate.25. The method of claim 16, further comprising rotating11.
The method of claim 1 Wherein disposing the liquidthe substrate at an initial rate loWer than the ?rst rate beforeoccurs before rotating the microelectronic substrate.12. The method of claim 1, further comprising selecting15the microelectronic substrate to have an approximately26. The method of claim 16, further comprising rinsingcircular platform shape and a diameter greater than eightthe loWer surface of the substrate With a rinse solution.inches.27. The method of claim 26, further comprising control13.
The method of claim 1, further comprising rinsing theloWer surface of the substrate With a rinse solution.2014. The method of claim 13, further comprising controlling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.approximately eight inches, the method comprising:25opposite the upper surface, the method comprising:3035distributing the liquid over the upper surface to a generally uniform thickness ranging from a ?rst value to athan the ?rst value by rotating the microelectronicsubstrate at a ?rst rate about a rotation axis of the 40microelectronic substrate and rotating a barrier thatcovers and is spaced apart from the upper surface of the5,000 Angstroms to about 10,000 Angstroms; and45barrier is restricted relative to rotation of a barriersupport positioned beneath the microelectronic sub5017.
The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfaceof air betWeen the barrier and the upper surface of themicroelectronic substrate at approximately the ?rstrate, and Where the rotation of the barrier is restrictedrelative to rotation of a barrier support positionedbeneath the microelectronic substrate.30. The method of claim 29 Wherein rotating the microsubstrate at a rate of betWeen approximately 2,000 toapproximately 5,000 Angstroms to approximately 8,0005518. The method of claim 16 Wherein distributing theliquid includes distributing the liquid over the upper surfaceapproximately 4,000 revolutions per minute.31. The method of claim 29 Wherein disposing the liquidincludes directing a stream of liquid through an opening inthe barrier toWard the substrate.to a generally uniform thickness of having a value from32.
The method of claim 29 Wherein disposing the liquidapproximately 7,000 Angstroms to approximately 10,000about tWenty centipoise.surface of the microelectronic substrate at a second rateapproximately equal to the ?rst rate to rotate a volumeelectronic substrate includes spinning the microelectronicto a generally uniform thickness having a value from19.
The method of claim 16 Wherein rotating the microelectronic substrate includes rotating the microelectronicsubstrate at up to approximately 4,000 revolutions perminute.20. The method of claim 16, further comprising selectinga viscosity of the liquid to be from about ?ve centipoise androtating the microelectronic substrate at a ?rst rate of upto about 4,000 revolutions per minute to distribute theliquid over the surface of the microelectronic substrateto an approximately uniform thickness of from aboutrotating a barrier that covers and is spaced apart from themicroelectronic substrate about the rotation axis at aAngstroms.disposing on the upper surface of the microelectronicsubstrate a liquid having a viscosity in the range ofabout ?ve centipoise to about tWenty centipoise;second value approximately 3,000 Angstroms greaterAngstroms.greater than eight inches;strate;viscosity on an upper surface of the microelectronicstrate.selecting the microelectronic substrate to have a diametersupporting the loWer surface of the microelectronic substrate;disposing a single liquid having a generally uniformsecond rate approximately equal to the ?rst rate torotate a volume of air betWeen the barrier and the uppersurface of the microelectronic substrate at approximately the ?rst rate, and Where the rotation of theabout ten Angstroms to about thirty Angstroms.29.
A method for applying a liquid to a microelectronicsubstrate having an upper surface and a loWer surfacesupporting a loWer surface of the microelectronic subsubstrate facing opposite the loWer surface;ling a temperature of the rinse solution to control a rate ofheat transferred to or from the loWer surface of the substrate.28. The method of claim 26 Wherein distributing theliquid to a generally uniform thickness includes forming aliquid layer having a thickness variation in the range of from15.
The method of claim 1 Wherein distributing the liquidto a generally uniform thickness includes forming a liquidlayer having a thickness that varies by no greater than aboutten Angstroms.16. A method for applying liquid to a generally circularmicroelectronic substrate having a diameter greater thandisposing the liquid on the substrate and before rotating thesubstrate at the ?rst rate.6065on the microelectronic substrate includes dispensing a photoresist material on the microelectronic substrate.33. The method of claim 29 Wherein distributing theliquid to a generally uniform thickness includes forming aliquid layer having a thickness variation in the range of fromabout ten Angstroms to about thirty Angstroms.*****.
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