Roland A. - PVD for microelectronics (779636), страница 78
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See Knudson number (Kn)Knock-on sputtering, 26, 38Knudson number (Kn), 147Labor costs, 179Laboratory-scale tools, 83Langmuir unit, 83, 222, 251Laplace's equation, 8Large scale integrated (LSI) devices, 2413Laser light scattering, 288Laser reflection, 288Laser sonar, 288Leybold-Heraeus, 106Lift-off techniques, 192Line resistance, 7Line-segment models, 362-65Lithography, 3Loadlocks, 165Logic devices, 5, 12, 16Long-throw techniques, 191-95, 368Lorentz force (F), 87Low cost-of-ownership (COO) of wafer fabrication, 3Low-melting-point metals, 2Low-pressure sputtering, 98-100Lower-temperature processing, 10LSI devices.
See Large scale integrated (LSI) devicesMMagnet rotation, 380Magnetic fields, 67-75Magnetron deposition. See Process modeling formagnetron depostionMagnetronshollow cathode magnetron, 250power supplies, 83unbalanced, 81See also Planar magnetronsMagnets in planar magnetrons, 88-90Maintenance and repair costs, 179Mass spectrometer, 85Mass units of AMU, 51Matchboxes, RF, 66--67Material properties in ionized magnetron sputterdeposition (I-PVD), 280-82Maxweli-Boltzmann distribution, 58MBE. See Molecular beam epitaxyMean-time-between-failure (MTBF), 169, 179Mean-time-to-failure (MTrF), 111,302Mean-time-to-repair (MTTR), 16, 111, 179Measurementselectrical, 278-80metric, 171of sputtered-atom transport, 44--46units of, 51, 58-59Mechanical clamp rings, 156, 158, 166414SUBJECT INDEXMegagauss-oersted (MGO), 88Memory, 5, 12, 16, 376MESC standards.
See Modular Equipment Standards Committee standardsMetal ionization, 251-58Metallization, 2, 4-5Metric measurements, 171Metrology of PVD (physical vapor deposition)materials and processes, 287-92Microarcs, 96Microcapacitors, 97Microelectronicsevolution of, 103-15role of PVD, 1-12Microns. See mTorrMicroprocessors, 16Microscopic cross-sectional imaging, 288Microstructural engineering, 392-96copper segregation, 395crystallographic orientation, 392, 393, 394grain size, 392-95second-phase microstructure, 395Microvoids, 398Mirrors, 1MLM Interconnect Roadmap, 113, 174MLM. See Multilevel metallization (MLM)Mo dimers, 34Mo single atoms, 34Modeling.
See Process modeling for magnetrondepostionModular Equipment Standards Committeee(MESC) standards, 111Molecular beam epitaxy (MBE), 4, 119-20Molecular dynamics film growth models, 36569, 372Monte Carlo models, 353,369-71Monte Carlo simulation models, 3, 141, 353,369-71MOSFET, 322Motorola, 291MRC, 106, 111, 112, 113MRC RMX TM, 376MTBE See Mean-time-between-failuremTorr (gas pressure units), 51, 109MTTF. See Mean-time-to-failureMTTR. See Mean-time-to-repairMulticomponent alloys, 2Multilevel metallization (MLM), 6-12, 215equations, 8NNEG technology. See Nonevaporable getter(NEG) technologyNegative ions, 40-41, 241Neodymium-boron-iron (Nd-B-Fe), 88Nitride films, 76, 80Nitrided mode (NM), 318Nitridization, 23Non-nitrided mode (NNM), 320Nonevaporable getter (NEG) technology, 127,128Nonuniform erosion, 396Nonunity sticking coefficient, 387Normal incidence, 33Novellus Systems, 113, 115OOccupancy costs, 179OES.
See Optical emission spectroscopyOhmic resistance (R), 6On-line information on PDV, 18Optical emission spectroscopy (OES), 83-85Optical lithography, 9Optical properties, 288Over-cosine distributions, 35, 36Overburden or bread-loafing, 11-12Oxidation, 23, 386Oxide films, 76, 80Oxygen contamination, 77-78PParallel-processing computers, 353,372Parasitic capacitance (C), 6, 7, 15Particle generation, 383,396-99Particulate combinations, 163Pascal pressure unit, 51Paschen Curve, 52, 53Passivating layer (dielectric), 7-8Patents in PVD technology, 20Peer-reviewed papers on PVD, 18Penning ionization, 257-58Perimeter coils, 246Perkin-Elmer Ultek, 106, 107, 108Personal computers, 3, 4, 348Photoresist heating, 380Photoresist layers, 185Photoresist patterning, 9, 186SUBJECT INDEXPhysical profilometry, 288Physical sputtering, 23, 24, 241Physical vapor deposition.
See PVD (physicalvapor deposition) technologyPhysics of sputtering, 23-49Picosecond untrasonic laser (PULSE), 288Planar magnetrons, 378circular, 72-73, 88-90cylindrical post, 74-76high-vacuum planar magnetrons, 99rectangular, 73-74, 95rotating cylindrical, 75S-Gun T M class, 74-75, 376schematics of, 89, 92, 93sputter deposition, 46swept-field magnetrons, 91-95See also DC magnetronsPlanarized PVD, 185, 215-40elevated-temperature PVD AI, 220-31improvements to TSP AI PVD, 227-31two-step process (TSP) AI PVD, 223-27elevated-temperature PVD Cu, 231-35high pressure application, 235-38physics of hot PVD, 216-20Plasma etching, 12 I, 168Plasma systems, 51-86DC plasmas, 61-63definition and production, 51-52diagnostics and optical emission in magnetrons, 83-85diode plasmas, 53-59floating potential, 59-60flux to the sheath, 60-61ionized magnetron sputter deposition (IPVD), 250-60magnetic fields, 67-75plasma potential, 59-60practical issues in PVD tools, 81-83reactive sputter disposition, 76-81RF matchboxes, 66-67RF plasmas, 64-66PM.
See Preventive maintenancePoisson's equation, 57, 148Polycrystalline film, 2 ! 6Power supplies for magnetrons, 83Preclean, wafers, 131-37Pressure baffles, 52Preventive maintenance (PM), 127, 128Process mapping for sputtering tools, 174-76415Process modeling for magnetron depostion,353-73cathode surface models, 354-55transport modeling, 356-58wafer surface, 359-71line-segment models, 362-65molecular dynamics film growth models,365-69, 372Monte Carlo models, 369-71Process modules, 118Product endorsements, 103PULSE.
See Picosecond untrasonic laserPVD modules, 149-63PVD (physical vapor deposition)applications of, 4-12argon gas for, 153-56compared to CVD, 200, 240-47, 287definition of term, 4, 23economics of, 1, 3-4, 16-17geometric applications, 11-12histogram by film type, 10information sources on, 17-20and the interconnect roadmap, 12-17overburden or bread-loafing, 11-12role in microelectronics, 1-12success of, 2-3technical quality of, 17PVD (physical vapor deposition) materials andprocesses, 285-352aluminum (AL) alloys, 292-307crystal orientation, 302-3deposition rate, 295deposition temperature and microstructure,295-302interaction of AL with Ti, 303-5uniformity of alloy composition, 305-7copper (Cu), 331-39metallurgical issues, 331-33PVD Ta and TaN barriers, 335-39sputtering and self-sputtering, 333-35metrology, 287-92PVD compared to CVD, 287, 340--47refractory metal silicides, 327-31MSi x where M = Ta, Mo, or W, 328-29TiSi 2 and CoSi 2, 329-31titanium nitride (TIN), 313-23antireflection coating (ARC), 321-23metallurgical issues, 313-16reactive PVD of TiN, 31 6-21SUBJECT INDEX416PVD (physical vapor deposition) materials andprocesses (continued)titanium (Ti), 307-13metallurgical issues, 307-10process results, 311-13titanium-tungsten (Ti-W) alloys, 323-27metallurgical issues, 323-25PVD of TixWl_ x, 325-27upper-level metallization, 347-48PVD (physical vapor deposition) tools, 81-85,90See also Sputtering toolsPzieoelectrics, 41QQIP.
See Quality improvement processQuality control methodologies, 291Quality improvement process (QIP), 111RRadiative heat transfer, 142Rail guided vehicle (RGV), 114Rapid thermal process (RTP), 149RBS. See Rutherford backscattering spectroscopyReactive ion etching (RIE), 132, 185-86, 332Reactive sputter disposition, 48, 76-81Rectangular planar magnetrons, 73-74Redecorated atoms, 273-74Redeposition problem, 275Redeposition and transport, 386-87Reflected, energetic neutrals, 39-40Reflectivity, 296-99Reflectometry, 288Reflow AL, 220-23Refractory metal silicides, 10, 327-31Refractory metal targets, 398Refractroy metals, 2Regeneration cycle, 12Residual gas analyzer (RGA), 85Resistivity, 299-300Resputtering effect, 40-41RF coils, 244--47, 249, 251RF diode configuration, 105RF magnetrons, 5RF matchboxes, 66-67, 247-48RF plasmas, 64-66, 82RF-ionized PVD, 153RGV.
See Rail guided vehicleRIE. See Reactive ion etchingRings, edge, 135, 156, 166Robotic handling, 168-71Rotating cylindrical planar magnetrons, 75RTP. See Rapid thermal processRutherford backscattering spectroscopy (RBS),288SS-Gun TM class magnetron, 74-75, 149, 376Samarium-cobalt (Sm-Co), 88Samsung, 220Scientific societies and journals, 17-18SDR. See Specific deposition rateSearch engines, 18Second-phase microstructure, 395Secondary electron microscopy (SEM), 288Secondary electron yields, 53-55Secondary ion mass spectrometry (SIMS), 288,384Self-sputter yields, 29SEM. See Secondary electron microscopySEMATECH, 9, 13, 111SEMATECH Cost of Ownership Modle, 180-81SEMI.
See Semiconductor Equipment andMaterials InstituteSEMICON trade shows, 19Semiconductor electronics, 1Semiconductor Equipment and MaterialsInstitute (SEMI), 111Semiconductor Industry Association's NationalTechnology Roadmap, 12, 13Semiconductor lnternational, 108Semiconductor market, 1, 3-4Semiconductor processing equipment, 3Semiconductor Research Corporation (SRC), 13Sensarray Corporation, 147Shadowing, 3Sheet resistance (sheet rho), 290Shield cleaning, 398Shielding and tooling, 81-82Shields, 166--67, 378Short throw distance, 185Si chip, 6, 10, 11SI units (kilograms, joules), 51SIA Roadmap.
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