Roland A. - PVD for microelectronics (779636), страница 79
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See Semiconductor IndustrySUBJECT INDEXAssociation's National Technology Roadmap, 12Silicon oxides, 131Silicon wafers, 12-13SIMBAD T M code, 226-27SIMS. See Secondary ion mass spectrometrySingle-atom-based film models, 354, 372Single-crystal or oriented targets, 37Six-sigma (zero-defects) quality control, 291SOG. See Spin-on glass (SOG) technologySolder-bonded targets, 380Solid state physics, 353Solid state transistors, 1Source arcing, 95-97Spark source mass spectrometry (SSMS), 388Specific deposition rate (SDR), 295Spin-on glass (SOG) technology, 5, 130, 132,133Spiral coils, 246Spluttering, 1Sputter deposition system, 1Sputter etching system, 1Sputter ion pumps, 99Sputter yields, 23, 28-33Sputtered atoms, kinetic energy of, 140-41Sputtered Films, 106, 113,376Sputtering, 23-49batch, 107, 108diode, 87energy and angular distributions, 33-38evaporation, 87forward, 36gas rarefaction, 47-48ion beam, 36knock-on, 26, 38low-pressure, 98-100negative ions, 40-41origin of term, 1physical, 23, 24, 241process of, 49-33reactive, 48reflected, energetic neutrals, 39-40replacing e-beam deposition, 3transport of sputtered atoms, 41-48Sputtering targets, 375-400microstructural engineering, 392-96particle generation, 396-99target burn-in, 383-84target composition, 384-87417target cooling, 378-83target fabrication, 376-78target purity, 387-89target utilization, 91,389-92Sputtering tools, 103-83cluster tools, 110-15cost-of-ownership, 176-81evolution of, 103-15generic PVD cluster tools, 115-18process mapping, 174-76stand-alone tools, 108-9technology of PVD cluster tools, 118-71foreign matter, 163-68PVD module, 149-63robotic handling, 168-71vacuum considertions, l 18-30wafer degas, 130-3 lwafer preclean, 131-37wafer temperature, 137-49300-mm PVD, 171-74See also PVD (physical vapor deposition)toolsSputtering wind, 47-48SRC.
See Semiconductor Research CorporationSSMS. See Spark source mass spectrometryStand-alone tools, 108Standard mechanical interface (SMIF) box, l l4Stefan-Boltzmann constant, 142Step coverage, 3, 12, 185, 198Stoichiometric compounds, 99Stress, tensile, 301-2Stress voiding, 138Strontium bismuth tantalate, 376Subthreshold region, 24Suppliers of PDV hardware, 18, 19Surface contamination, 55Surface roughness, 288Swept-field magnetrons, 9 !-95TAB. See Tape automated bondingTape automated bonding (TAB), 347Target composition shifting, 386-87Target grooving, 91Target materials, 28Target quality and source performance, 168Target shapes, 107Target sheath, 40418SUBJECT INDEXTarget utilization, 91,389-92Targets, sputtering.
See Sputtering targetsTechnology node, 13Teflon-like polymers, 131Temperaturecontrol of, 143-49during PVD, 138-43in planarized PVD, 215-40wafer, 137-49Tensile stress, 301-2Terminal oxidation level, 77-78Thermal budget, 10, 137-38Thermal calculations, 379Thermal evaporation, 4, 23Thermal stress, 300-302Thermal wave mapping, 288Thermalized transport of sputtered atoms, 41, 42Thermomechanical damage, 380-81Thickness mapping, 288Thin film uniformity, 91, 94Thin film, vacuum-based deposition technologies, 1, 23Thin Films Systems, 113Thornton diagram, 298300-mm PVD, 171-74Three-sigma nonuniformity, 3Ti.
See TitaniumTi-W. See Titanium-tungstenTiN. See Titanium nitrideTitanium nitride (TIN), 313-23antireflection coating (ARC), 9, 10Titanium (Ti), 307-13Titanium wetting layer, 228-30Titanium-tungsten (Ti-W) alloys, 10, 323-27Titenates, 24 ITool up-time, 16Tool utilization, 180Tosoh SMD, 377Touch-Tone phones, 104Trade publications on PDV, 18-19Trade shows on PVD, 19Transfer modules, 118Transport of ions in matter. See TRIM (computerprogram)Transport modeling, 356-58Transport of sputtered atoms, 41-48Trenches and viasfilling, 260, 268-78lining, 260, 261-68Trikon Technologies, Inc., 235TRIM (computer program), 26, 354, 355Turbopumps, 52, 122-25Two-step process (TSP), 174, 294of A1 PVD, 223-31UUHV ion guages, 99UHV. See Ultrahigh vacuumULSI. See Ultralarge scale integrated (ULSI) devicesUltrahigh vacuum (UHV), 113, 119, 121Ultralarge scale integrated (ULSI) devices, 6, 11,113, 121, 188, 348UMB.
See Under bump metallurgyUnbalanced magnetrons, 81Under bump metallurgy (UBM), 248Under-cosine distributions, 35, 36Uniform erosion, 91Unipolar arcs, 82-83, 96Units of measurement, 51, 58-59Upper-level metallization, 347-48Vacuum base pressure, 238Vacuum practices, 129-30Vacuum pumping, 121-29Vacuum systems, 52Vapor pressures, 2Varian Associates, 106, 109, 110, 111, 112, 113,117, 197Varian ConMag TM, 376Varian Quantum TM, 376Vendors of PVD, 18-19Virtual experiments. See Process modeling tk)rmagnetron depostionViton o-rings, 52VLSI Research, 3Volatile by-products, 23WWafer cost, 173Wafer degas, 130-31Wafer dimensions, 173Wafer fabricationcost-of-ownership (COO), 1, 3SUBJECT INDEXWafer fabrication (continued)size increases, 3throughput needs of, 2Wafer holding, 156-63Wafer preclean, 131-37Wafer surface and process modeling, 359-71Wafer temperature, 137-49control of, 143-49temperature during PVD, 138-43thermal budget, 137-38Water cooling, 379, 381Water flow, 379, 380Wax phonograph masters, 1Wehner spots, 37Weight percent versus atomic percent, 293Western Electric, 104Wet chemistry, 103Wetting layer, titanium (Ti), 228-30419Wetting/nucleation layers, 238Wirebonded leads, 348XX-ray diffraction (XRD), 288X-ray fluorescence (XRF), 388X-ray photoemission spectroscopy (XPS), 288,384Yield costs, 180Zero-defects (six-sigma) quality control, 291Zirconates, 241Zirconium titanate, 376This Page Intentionally Left Blank.
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