Roland A. - PVD for microelectronics (779636), страница 75
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This particular mechanism of particlegeneration is greatly reduced by the ultralow levels of oxygen ( < 10 ppmby weight) found in high-purity AI targets [11.13].References11.1. C. E. Wickersham Jr., J. E. Poole, and J. J. Mueller, "Particle contamination during sputter deposition of W-Ti films," J. Vac. Sci. & Tech.
A10(4): 1713-1717 (1992).11.2. C. E. Wickersham Jr. and J. E. Poole, "Target Operating Temperatures in Conical MagnetronType Sputtering Sources," Tosoh SMD, Technical Note TKN 9.008A.11.3. MRC Technical Brief on "ccHrM-Titanium PVD Targets," (1996).11.4. MRC Technical Brief on "IntegraBond TM Diffusion Bonding," (1995).11.5. S. M. Rossnagel, I. Yang, and J.
J. Cuomo, "Compositional changes during magnetron sputtering of alloys," Thin Solid Films 199:59-69 (1991).400R. POWELLAND S. M. ROSSNAGEL11.6. K. Kikuta and T. Kikkawa, Extended Abstract of the 53rd Autumn Meeting, Vol. 2, p. 586,Japan Society of Applied Physics, 1992.11.7. P. S.
Gilman, "Microstructurally controlled sputtering targets," Semicond. FABTECH 3:209-211 (1995). See also A. E. Braun, "Sputtering targets adapt to new materials and shrinking architectures", Semicond. Int., 127-134 (June 1998).11.8. R. S. Bailey and N. C. Hill, "Process, equipment, and materials control in integrated circuitmanufacturing," SPIE Proceedings 2637:56-64 (Oct.
1995).11.9. J. S. Fan, R. S. Bailey, and C. E. Wickersham Jr., "New developments and applications forsputtering targets at Tosoh SMD," submitted for presentation at SEMICON-China (November1997).I1.10. C. E. Wickersham Jr., "Nondestructive testing of sputtering targets," Solid State Tech., 75-80(Nov. 1994).11.11. S. Whitney, R. W. Lionetti, C.
Wickersham Jr., L. Succo, J. Esposito, and M. Cleeves,"Influence on the propensity for whisker growth in sputter-deposited aluminum films," TosohSMD, Technical Note TKN 8.004A (1988).11.12. K. J. Hansen, "Microcontamination from physical vapor deposition process and equipment,"Technical Proc. of SEMICON-Korea, 139-152 (Nov. 1993).11.13.
K. S. Bailey, A. Leybovich, J. E. Poole, T. Kuniya, N. C. Hill, and C. E. Wickersham Jr.,"Particle emission from AI203 doped aluminum targets during sputter deposition," TechnicalProc. of the VLSI Multilevel Interconnection Conf., p. 317 (June 1994).Author IndexAbelson, J. R., 350 (9.24)Abril, I., 373 (10.8)Akazaki, M., 48 (2.14)Anderson, G. S., 48 (2.5)Anderson, L., 101 (4.12)Anderson, R. L., 100 (4.8)Aochi, H., 212 (6.17)Aoki, H., 239 (7.11)Arimoto, Y., 351 (9.59)Asamaki, T., 101 (4.18, 4.19), 351 (9.47)Atwater, H. A., 240 (7.19)Babriarz, A. J., 352 (9.60)Backhouse, C.
J., 212 (6.5)Bai, G., 240 (7.15)Bailey, K. S., 400 (11.13)Bailey, R. S., 400 (11.8, 11.9)Ball, L. T., 49 (2.25), 373 (10.11)Bang, D. S., 213 (6.23)Barankova, H., 350 (9.28)Barnes, M., 283 (8.4)Barnett, S. A., 350 (9.22)Barth, H. J., 283 (8.19)Beinglass, I., 351 (9.57)Beisswenger, S., 101 (4.13)Belkind, A., 350 (9.26)Bencher, C., 350 (9.33)Berg, S., 350 (9.25, 9.28)Berger, S., 48 (2.9)Bergstrom, D. B., 350 (9.38)Berry, L.
A., 48 (2.17), 283 (8.9)Besocke, K., 48 (2.9)Bethune, D. S., 49 (2.22)Biberger, M. A., 239 (7.6, 7.10), 350 (9.30), 351(9.55)Biersack, J. P., 48 (2.7), 182 (5.28), 372 (10.2,10.3)Birkmaier, G., 181 (5.8), 283 (8.19)Blanchard, R., 181 (5.4)Blom, H.-O., 350 (9.25)Boden, T., 349 (9.21)Bohm, D., 85 (3.5)Bohr, M. T., 20 (1.4)Bombardier, S. G., 212 (6.1), 351 (9.45)Bonora, A., 183 (5.46)Bothra, S., 283 (8.18)Bower, J.
E., 283 (8.10)Bower, R. W., 349 (9.14)Boxman, R. L., ed., 48 (2.4)Brain, R. A., 240 (7.19)Brankaert, W. A. M. C., 182 (5.33)Brett, M. J., 212 (6.5, 6.10, 6.12, 6.13), 239(7.1), 240 (7.17), 349 (9.20), 350 (9.31,9.35, 9.37), 373 (10.14, 10.15, 10.16,10.25)Brodsky, S., 212 (6.11, 6.17)Broughton, J. N., 212 (6.5)Brown, D. M., 20 (1.4), 182 (5.37)Bunshah, R., 48 (2.1)Burggraaf, P. S., 181 (5.6, 5.7), 183 (5.49)Butler, D. C., 240 (7.20, 7.21)CCale, T.
S., 373 (10.26)Camporese, D., 183 (5.47)Carlsson, P., 350 (9.28)401AUTHOR INDEX402Case, C. B.. 283 (8.10)Case. C. 1.. 283 (8.10)Catabay. W., 283 (8.17)Caughman, I. B. 0.. 283 (8.3)Cerio, F.. 283 (8.8)Chang. B., 283 (8.17, 8.18)Chapman, Brian. 85 (3.4), 283 (8.12)Chen, C. L.. 350 (9.35)Chen. F.. 85 (3.6)Chen. L., 182 (5.35)Chen, S. C..
212 (6.16). 350 (9.35)Cheng. P. F,, 284 (8.23)Cheung, R.. 213 (6.23)Chiang. 1.. 240 (7.15)Child. C. D., 85 (3.3)Chin, D.. 239 (7.5)Chu. B.. 284 (8.24)Chu. P. K.. 349 (9.4)Chuang, H.. 284 (8.24)Chun. K.-C.. 35 I (9.52)Clarke. A . . 182 (5.32). 352 (9.6 I )Clarke. P.. 86 (3.10). I X I 15.11Clash, W.. I 82 (5.25)Cleever, M.. 3(Kl ( I 1.1 I )Cochran. R.
R . , 100 14.8)Cohen. B.. 182 (5.2 1 )Colpan. E.. 349 (9.15)Collinc. G. J.. 349 (9.71Conre. A,. I82 (5.17)Cook, L. M.. 240 (7.18)Cormia. R . L.. 101 (4.14)Cote.W.J..21216.1).351 (9.45)Coufai. H., 49 (2.22)Cox. I. Neal. 240 (7.15)Cronin. 1. E.. 351 (9.45)Crowley. G.. 283 (8.19)Cunningham. J. A..
183 (5.40)Cuomo, J . J.,49 (2.23).212 (6.3. 6.9). 2H3 18.1).35 1 (9.49). 399 1 I I .5)DDalvie. M..373 (10. 18)Dass, A.. 35 1 (9.44)Daviet. 1.-F.. 182 (5.36)Dax. M. 349 (9.5)Delfino. J. A,. 39 (9.8)Demaray. R . E.. 100 (4.8)Dernchishin. A. V.. 349 (9.10)Derneray, E., 212 (6.20)Deshpandey, C.. 48 (2.11Dew,S.K.,212(6.10,6.13,6.14),239(7.1),2~(7.171, 349 (9.19. 9.20), 350 (9.31, 9.36,9.37)- 373 (-10.14, 10.15, 10.16, 10.25)Dhudshia, V. H., 183 (5.54)Dickson, M., 86 (3.20), 283 (8.14)Dixit. G .
A., 240 (7.20). 351 (9.58)Doan, T., 21 2 (6.15)Dobson. C. D.. 240 (7.20)Doughty. C.. 48 (2.17). 283 (8.9)Drew, M. A.. 183 (5.47)Drewery. J.. 283 (8.8)Durhman, S.. 18 1 (5.1 1)Eckstein. W.. 48 (2.6.2.7). 182 (5.28). 372 (10.3.10.4)Eddy, R . . 182 (5.37)Egenneier. J..
283 (8.17)Eienberg. M.. 35 1 (9.58)Einspruch. Norman G.. ed.. 20 ( 1.14)Ellwanger. R. C.. 350 (9.38)Esprrsito. J.. 400 ( 1 I . I 1 )Estc. G . , 101 (4.17). 212 ( 6 . 5 )Evans. D. C.. l H2 (5.30)FFair, J. A.. 349 (9.8). 350 (9.27). 351 (9.44)Falconer, I. S.. 49 (1.25, 2.26). 373 (10.10,10.1I )Fan. J . S..
4(M) I 11 -9)Fang, C. C.. 212 16.221. 373 (10.24)Fang, S.. 240 (7. 15)Fnrouki, R.T., 373 ( 10, 18)Federlin. P. 182 (5.35)Feldrnan. L. C.. 349 (9.2)Fiordalice, R . , 284 (8.24)Forbes. K.. 182 (5.35)Forster, J. C.. 283 (8.4, 8.16)Fosnight. W.. 183 (5.46)Fraser. David B.. 20 ( I .9). 100 (4.3), 240 17.19).35 1 (9.44)Freeman.
John L.. ed.. 2 1 ( 1 .15)Friedrich. L. J.. 240 (7.17)F ~ t i g e r .B., 182 (5.37)AUTHOR INDEXGGabriel. C. T., 182 (5.23)Garnbino, R. J.. 49 (2.23). 283 (8.1)Garcia, S.. 284 (8.24)Gardner. D. S., 240(7.15. 7.17. 7.19)Ghezzo. M..2 0 (1.4)Ghosh, S. K., 349 (9.9)Giannantonio. R . , 182 (5.18)Gilrnan. P. S., 400 ( 11.7)Glang, R.. 48 (2.2)Glocker. David A.. ed.. 20 (1.13)Coeckner. M. J., 8 6 (3.19)Goedicke, K., 8 6 (3.15), 101 (4.15, 4.16)Gogol, C.
A,, 4 9 (2.30). 86 (3.24)Gondran. C.. 349 (9.2 1)Gonin. J.. 212 (6.1)Gopalraja, P.. 283 (8.16)Gorbatkin, S. M., 48 (2.17), 283 (8.9)Goree. J.. 86 (3.19)G r a b a r ~ H.. 1.. 283 (8.3)Granneman. E. H. A.. 18 1 (5.15)Gras-Marti, A , . 373 ( 10.8. 10.9)Greene. J. E.. 284 (8.26). 350(9.22. 9.24. 9.38)Grove. W. R.. 20 ( I . 1 )Grunt.;. H.. 181 (5.8)Guise. P E., 181 (5.1)Gyulai. I., 349 (9.15)Haggmark, L. G.. 372 ( 10.2)Hamaguchi. S . . 49 (2.211, 212 (6.4. 6.7).
283(8.20). 284 (8.21. 8.221, 351 (9.56). 373(10.18, 10.19. 10.20. 10.21, 10.22)Hamamoro. K. H.. 240 (7.20)Hanipden-Smith, M.. 20 ( 1.7)Hanawa. H., 182 (5.21)Hankins. 0. E.. 35 1 (9.49)Hansen. K. I., 1 ( K ) ( 1 1.12)Hanssmann. M. G., 183 (5.47)Hara.T.. 212 (6.16)Harashima. K . . 230 (7.13)Harper.
I. h.1. E.. 1 9 (2.23). 283 (8.1)Harrus. A,. 349 (9. I jHartman, D. C.. 182 t5.29)Hartsough. L. D.. 182 (5.341Hashim, l., 181 (5.9)Hashizume. K..239 (7.4)Havemann. R. H.. 240 (7.20), 351 (9.58)Hayashi, Y., 240 (7.13)Heesters, W. C. J., 182 (5.22)Heisig, U.. 8 6 (3.14)Helmer, J. C., 100 (4.8)Helneder. H., 283 (8.19)Hems. J., 240 (7.20)Heyder, R., 182 (5.17)Hieronymi, R., 182 (5.25)Hill, N. C.,400(11.8, 11.13)Hill.
R . J.. ed.. 20 (1.8)Hill. W. R.. 212 (6.1), 351 (9.45)Hirschwald, W..239 (7.3)Hockett. R. S.. 349 (9.4)Hodul. D.. 2 12 (6.10). 249 (9.8), 349 (9.8).(9.27, 9.31. 9.37)Hofer, Wolfgang. 48 (2.9). 49 (2.3I )Hoffman. D. W., 49 (2.20. 2.281, 8 6 (3. I 1)Hoffman. V., 100 (4.8).
239 (7.6. 7.10).(9.16)Holber, W. M..283 (8.3)Holverwn. P. J . , 240 (7.20)Honda. M.. 2 12 (6.17 jHong. Q.-Z.. 35 1 (9.58)Hong. T. P.. 284 (8.24)Hopwrwd, J . , 86 (3.20). 283 (8.5. 8.6. 8.11. RHorie. H.. 35 1 (9.59)HOWOIL.C. M . . 8 6 (3.17)Hosokowa. N.. I O I (4.19). 351 (9.48)Hotate. K.. 1 0 1 (4.18. 4.19)Hcieh, J . J., 373 ( 10.24)Hsu. W. Y., 240 (7.20)Huang. C.. 183 (5.42)Hulseweh. T.. 349 (9.17)IImni. M . .
351 (9.59)Inoue. M.. '39 (7.4)loffe, I. v., 350 (9.26)Ishibahi. K.. 101 (4.19)1slam;lraja. M. M..21 3 (6.23)Itoh. A.. 35 1 (9.59)Itoh. N.. 239 (7.9)Jackson. R. L. 182 (5.17). 349 (9.1)Jackson. S., 350 (9.30). 351 (9.55)404AUTHORINDEXJain, M. K., 240 (7.20)James, B. W., 49 (2.26), 373 (10.10)Janacek, T., 212 (6.12, 6.13, 6.14), 349 (9.20),373 (10.14)Jasinski, T., 182 (5.29)Jeffreys, A.
I., 240 (7.20)Johansson, B. O., 350 (9.22)Jones, F., 373 (10.24)Joshi, R. V., 212 (6.11, 6.22), 373 (10.24)KKaanta, C. W., 212 (6.1), 351 (9.45)Kang, S., 182 (5.29)Katata, T., 212 (6.17)Kaufman, H. R., 48 (2.10), 85 (3.1), 86 (3.18)Keller, J. H., 283 (8.4)Kerszykowski, G., 351 (9.45)Kidd, P., 283 (8.2)Kieu, H., 283 (8.19)Kikkawa, T., 239 (7.9, 7.11), 240 (7.13), 400(11.6)Kikuta, K., 239 (7.11), 240 (7.13, 7.14), 400(11.6)Kim, K.-B., 181 (5.9), 351 (9.52)Kim, K.-M., 183 (5.45)Kim, S., 212 (6.15)Kim, Y.-W., 284 (8.26)Kinoshita, H., 212 (6.9)Kirchhoff, V., 86 (3.15), 101 (4.15)Kitahara, H., 351 (9.48)Klawuhn, E., 351 (9.55)Klein, J., 284 (8.24)Kodas, T., 20 (1.7)Konuma, Mitshuhara, 21 (i.17)Korczynski, E., 20 (1.2), 183 (5.43)Korndoffer, C., 86 (3.14)Korszykowski, G., 212 (6.1)Koss, V.
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