Диссертация (1149284), страница 22
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2000. Т. 12. № 49.— C. 10021-10027.26.Blumenau A.T., Jones R., Oberg S., Briddon P.R., Frauenheim T. Dislocation relatedphotoluminescence in silicon // Physical Review Letters. 2001. Т. 87. № 18.27.Kveder V., Kittler M., Schröter W. Recombination activity of contaminated dislocations insilicon:A model describing electron-beam-induced current contrast behavior // PhysicalReview B. 2001. Т. 63.
№ 11.28.Kveder V., Sekiguchi T., Sumino K. Electronic States Associated with Dislocations in PType Silicon Studied by Means of Electric-Dipole Spin-Resonance and Deep-LevelTransient Spectroscopy // Physical Review B. 1995. Т. 51. № 23. — C. 16721-16727.29.Loshachenko A.S., Vyvenko O.F., Shek E.I., Sobolev N.A. The electrically active centers inoxygen-implanted silicon // Semiconductors. 2013.
Т. 47. № 2. — C. 285-288.30.Kimerling L.C., Patel J.R. Defect states associated with dislocations in silicon // APPLIEDPHYSICS LETTERS. 1979. Т. 34. № 1. — C. 73.31.Kveder V.V., Osipyan Y.A., Schroter W., Zoth G. On the Energy-Spectrum of Dislocationsin Silicon // Physica Status Solidi a-Applied Research. 1982. Т. 72. № 2. — C.
701-713.32.Omling P., Weber E.R., Montelius L., Alexander H., Michel J. Electrical-Properties ofDislocations and Point-Defects in Plastically Deformed Silicon // Physical Review B. 1985.Т. 32. № 10. — C. 6571-6581.33.Kisielowski C., Weber E. Inhomogeneities in plastically deformed silicon single crystals. II.Deep-level transient spectroscopy investigations of p- and n-doped silicon // PhysicalReview B. 1991. Т. 44. № 4. — C. 1600-1612.34.Castaldini A., Cavalcoli D., Cavallini A., Binetti S., Pizzini S.
Electronic transitions at defectstates in Cz p-type silicon // APPLIED PHYSICS LETTERS. 2005. Т. 86. № 16. — C.162109.35.McHedlidze T., Wilhelm T., Arguirov T., Trushin M., Reiche M., Kittler M. Correlation ofelectrical and luminescence properties of a dislocation network with its microscopicstructure // physica status solidi (c). 2009. Т. 6. № 8. — C. 1817-1822.36.Kittler M., Seifert W., Knobloch K. Influence of contamination on the electrical activity ofcrystal defects in silicon // Microelectronic Engineering. 2003. Т. 66.
№ 1-4. — C. 281-288.13137.Brown A.R., Claybourn M., Murray R., Nandhra P.S., Newman R.C., Tucker J.H. EnhancedThermal Donor Formation in Silicon Exposed to a Hydrogen Plasma // SemiconductorScience and Technology. 1988. Т. 3. № 6. — C. 591-593.38.Sauer R., Weber J., Stolz J., Weber E.R., Kusters K.H., Alexander H. Dislocation-RelatedPhotoluminescence in Silicon // Applied Physics a-Materials Science & Processing.
1985. Т.36. № 1. — C. 1-13.39.Bastien P., Azou P. Influence De Lecrouissage Sur Le Frottement Interieur Du Fer Et DeLacier, Charges Ou Non En Hydrogene // Comptes Rendus Hebdomadaires Des Seances DeL Academie Des Sciences. 1951. Т. 232. № 20. — C. 1845-1848.40.Miueller W.M., Blackledge J.P., Libowitz G.G. Metallic Hydrides // 1968.41.Louthan M.R., Donovan J.A., Dexter A.H. Effect of Microvoids on Hydrogen Diffusion //Journal of the Iron and Steel Institute. 1972. Т. 210. № Jan.
— C. 57-&.42.Louthan M.R., Rawl D.E., Caskey G.R., Donovan J.A. Hydrogen Embrittlement of Metals //Materials Science and Engineering. 1972. Т. 10. № 6. — C. 357-&.43.Гельд П.П., Рябов Р.А. Водород в металлах. — М. : «Металлургия», 1974.44.Tien J.K., Thompson A.W., Bernstein I.M., Richards R.J. Hydrogen Transport byDislocations // Metallurgical Transactions a-Physical Metallurgy and Materials Science.1976. Т. 7. № 6. — C. 821-829.45.Becker G.E., Gobeli G.W.
Surface Studies by Spectral Analysis of Internally ReflectedInfrared Radiation - Hydrogen on Silicon // Journal of Chemical Physics. 1963. Т. 38. № 12.— C. 2942-&.46.Beckmann K.H. Investigation of Chemical Properties of Stain Films on Silicon by Means ofInfrared Spectroscopy // Surface Science. 1965. Т. 3. № 4. — C. 314-&.47.Ibach H., Rowe J.E. Hydrogen Adsorption and Surface-Structures of Silicon // SurfaceScience. 1974. Т. 43. № 2. — C.
481-492.48.Brodsky M.H. Plasma Preparations of Amorphous Silicon Films // Thin Solid Films. 1978.Т. 50. № May. — C. 57-67.49.Sol N., Kaplan D., Dieumegard D., Dubreuil D. Post-Hydrogenation of Cvd Deposited a-SiFilms // Journal of Non-Crystalline Solids. 1980. Т.
35-6. № Jan-. — C. 291-296.13250.Zellama K., Germain P., Squelard S., Bourdon B., Fontenille J., Danielou R. Possibleconfigurational model for hydrogen in amorphous Si:H. An exodiffusion study // PhysicalReview B. 1981. Т. 23. № 12. — C.
6648-6667.51.Seager C.H., Ginley D.S. Passivation of Grain-Boundaries in Polycrystalline Silicon //APPLIED PHYSICS LETTERS. 1979. Т. 34. № 5. — C. 337-340.52.Johnson N.M., Biegelsen D.K., Moyer M.D. Deuterium Passivation of Grain-BoundaryDangling Bonds in Silicon Thin-Films // APPLIED PHYSICS LETTERS. 1982. Т. 40. №10. — C. 882-884.53.Dubé C., Hanoka J.I. Hydrogen passivation of dislocations in silicon // APPLIED PHYSICSLETTERS. 1984. Т. 45. № 10.
— C. 1135.54.Benton J.L., Doherty C.J., Ferris S.D., Flamm D.L., Kimerling L.C., Leamy H.J. HydrogenPassivation of Point-Defects in Silicon // APPLIED PHYSICS LETTERS. 1980. Т. 36. № 8.— C. 670-671.55.Pohoryles B. Hydrogen Passivation of Defects in Deformed Silicon // Physica Status Solidia-Applied Research. 1981.
Т. 67. № 1. — C. K75-K80.56.Pearton S.J. Hydrogen Passivation of Gamma-Induced Point-Defects in Silicon // PhysicaStatus Solidi a-Applied Research. 1982. Т. 72. № 1. — C. K73-K75.57.Sah C.-T. Deactivation of the boron acceptor in silicon by hydrogen // APPLIED PHYSICSLETTERS. 1983. Т. 43. № 2. — C. 204.58.Pankove J., Carlson D., Berkeyheiser J., Wance R. Neutralization of Shallow AcceptorLevels in Silicon by Atomic Hydrogen // Physical Review Letters. 1983. Т. 51. № 24. — C.2224-2225.59.Johnson N.M., Herring C., Chadi D.J. Interstitial Hydrogen and Neutralization of ShallowDonor Impurities in Single-Crystal Silicon // Physical Review Letters.
1986. Т. 56. № 7. —C. 769-772.60.Pankove J.I., Lampert M.A., Tarng M.L. Hydrogenation and Dehydrogenation ofAmorphous and Crystalline Silicon // APPLIED PHYSICS LETTERS. 1978. Т. 32. № 7. —C. 439-441.61.Kaplan D., Sol N., Velasco G., Thomas P.A. Hydrogenation of Evaporated AmorphousSilicon Films by Plasma Treatment // APPLIED PHYSICS LETTERS. 1978. Т.
33. № 5. —C. 440-442.13362.Kveder V.V., Labusch R., Ossipyan Y.A. The Exodiffusion of Hydrogen in DislocatedCrystalline Silicon // Physica Status Solidi a-Applied Research. 1984. Т. 84. № 1. — C. 149156.63.Johnson N. Mechanism for hydrogen compensation of shallow-acceptor impurities in singlecrystal silicon // Physical Review B. 1985. Т. 31. № 8. — C.
5525-5528.64.Johnson N., Ponce F., Street R., Nemanich R. Defects in single-crystal silicon induced byhydrogenation // Physical Review B. 1987. Т. 35. № 8. — C. 4166-4169.65.van Wieringen A., Warmoltz N. On the Permeation of Hydrogen and Helium in SingleCrystal Silicon and Germanium at Elevated Temperatures // Physica. 1956. Т. 22.
№ 10. —C. 849-865.66.Ichimiya T., Furuichi A. On the Solubility and Diffusion Coefficient of Tritium in SingleCrystals of Silicon // International Journal of Applied Radiation and Isotopes. 1968. Т. 19.— C. 573-578.67.Shi T.S., Bai G.R., Qi M.W., Zhou J. In Studies of the Electron-Irradiated Silicon CrystalGrown in Hydrogen Atmosphere // Materials Science Forum. 1986. Т.
10-12. — C. 597-602.68.Schwartz B., Robbins H. Chemical Etching of Silicon .4. Etching Technology // Journal ofthe Electrochemical Society. 1976. Т. 123. № 12. — C. 1903-1909.69.Tavendale A.J., Williams A.A., Pearton S.J. Hydrogen injection and neutralization of boronacceptors in silicon boiled in water // APPLIED PHYSICS LETTERS. 1986. Т. 48. № 9. —C. 590.70.Yarykin N., Sachse J.U., Lemke H., Weber J. Silver-hydrogen interactions in crystallinesilicon // Physical Review B. 1999. Т. 59. № 8. — C. 5551-5560.71.Weber J., Knack S., Feklisova O.V., Yarykin N.A., Yakimov E.B.
Hydrogen penetrationinto silicon during wet-chemical etching // Microelectronic Engineering. 2003. Т. 66. № 1-4.— C. 320-326.72.Sveinbjornsson E.O., Andersson G.I., Engstrom O. Hydrogen Passivation of Gold in P-TypeSilicon Involving Hydrogen-Gold-Related Deep Levels // Physical Review B. 1994. Т. 49.№ 11. — C. 7801-7804.73.Feklisova O.V., Yakimov E.B., Yarykin N.A., Weber J. Low temperature hydrogenation ofdislocated Si // Materials Science and Engineering B-Solid State Materials for AdvancedTechnology.
1999. Т. 58. № 1-2. — C. 60-63.13474.Mukashev B.N., Fukuoka N., Saito H. Studies of Radiation Defects in Hydrogen ImplantedSilicon by Deep Level Transient Spectroscopy // Radiation Effects and Defects in Solids.1982. Т. 61. № 3-4. — C. 159-163.75.Picraux S., Vook F. Structure of hydrogen center in D-implanted Si // Physical Review B.1978. Т. 18. № 5. — C.
2066-2077.76.Irmscher K., Klose H., Maass K. Hydrogen-Related Deep Levels in Proton-BombardedSilicon // Journal of Physics C-Solid State Physics. 1984. Т. 17. № 35. — C. 6317-6329.77.Maleville C., Mazure C. Smart-Cut (R) technology: from 300 mm ultrathin SOI productionto advanced engineered substrates // Solid-State Electronics. 2004.
Т. 48. № 6. — C. 10551063.78.Srivastava P.C., Singh U.P. Hydrogen in semiconductors // Bulletin of Materials Science.1996. Т. 19. № 1. — C. 51-60.79.Leich D.A., Tombrello T.A. A Technique for Measuring Hydrogen Concentration VersusDepth in Solid Samples // Nuclear instruments & Methods 1973. Т. 108. — C. 67-71.80.Lanford W.A., Trautvetter H.P., Ziegler J.F., Keller J. New precision technique formeasuring the concentration versus depth of hydrogen in solids // APPLIED PHYSICSLETTERS.
1976. Т. 28. № 9. — C. 566.81.Amsel G., Lanford W.A. Nuclear-Reaction Techniques in Materials Analysis // AnnualReview of Nuclear and Particle Science. 1984. Т. 34. — C. 435-460.82.Oguz S., Collins R.W., Paesler M.A., Paul W. Effects of Partial Evolution of H from a-Si-Hon the Infrared Vibrational-Spectra and the Photo-Luminescence // Journal of NonCrystalline Solids.











