Диссертация (1105259), страница 29
Текст из файла (страница 29)
Bonded hydrogen in nanocrystalline silicon photovoltaicmaterials: Impact on structure and defect density// Appl. Phys. Lett. 2011. Vol. 110. P. 064315-1064315-6.[72] Mahan A.H., Yang J., Guha S., Williamson D.L. Structural changes in a−Si:H film crystallinitywith high H dilution // Phys. Rev. B. 2000. Vol. 61 P. 1677-1680.[73] Niikura C., Roca i Cabarrocas P., Bouree J.-E. Structural properties of microcrystalline Si filmsprepared by hot-wire/catalytic chemical vapor deposition under conditions close to the transitionfrom amorphous to microcrystalline growth // Thin Solid Films. 2011. Vol.
519. P. 4502-4505.[74] Vavrunkova V., van Elzakker G., Zeman M., Sutta P. Medium-range order in a-Si:H fi lmsprepared from hydrogen diluted silane // Phys. Status Solidi A. 2010. Vol. 207 (3). P. 548–551.149[75] Guha S., Yang J., Williamson D. L., Lubianiker Y., Cohen J. D., Mahan A. H. Structural,defect, and device behavior of hydrogenated amorphous Si near and above the onset ofmicrocrystallinity // Appl.
Phys. Lett. 1999. Vol. 74. P. 1860-1862.[76] Kamei T., Stradins P., Matsuda A. Effects of embedded crystallites in amorphous silicon onlight-induced defect creation // Appl. Phys. Lett. 1999. Vol. 74 (12). P. 1707-1709.[77] Wronski C.R., Pearce J.M., Deng J., Vlahos V., Collins R.W. Intrinsic and light induced gapstates in a-Si:H materials and solar cells—effects of microstructure // Thin Solid Films. 2004. Vol.451 – 452. P. 470–475.[78] Zeman M., van Elzakker G., Tichelaar F.D., Sutta P. Structural properties of amorphous siliconprepared from hydrogen-diluted silane // Phil. Mag.
2009. Vol. 89 (28-30). P. 2435-2448.[79] Mahan A.H., Carapella J., Nelson B.P., Crandall R.S., Balberg I. Deposition of device quality,low H content amorphous silicon // J. Appl. Phys. 1991. Vol. 69. P. 6728-6730.[80] Wei Y., HaiRong Z., Yi Z., YuKai S., HaiJiang L., GuangSheng F. Photoresponse and carriertransport of protocrystalline silicon multilayer films // Chin. Sci. Bull. 2012. Vol. 57 (20). P. 26242630.[81] Astakhov O., Carius R., Finger F., Petrusenko Y., Borysenko V., Barankov D.
Relationshipbetween defect density and charge carrier transport in amorphous and microcrystalline silicon //Phys. Rev. B. 2009. Vol. 79. P. 104205-1-104205-14.[82] Kazanskii A.G., Terukov E.I., Forsh P.A., Kleider J.P. Photoconductivity of TwoPhaseHydrogenated Silicon Films // Semiconductors. 2010.
Vol. 44 (4). P. 494-497.[83] Reynolds S., Carius R., Finger F., Smirnov V. Correlation of structural and optoelectronicproperties of thin film silicon prepared at the transition from microcrystalline to amorphous growth// Thin Solid Films. 2009. Vol. 517. P. 6392-6395.[84] Roca i Cabarrocas P. Plasma enhanced chemical vapor deposition of amorphous, polymorphousand microcrystalline silicon films // J. Non-Cryst. Solids.
2000. Vol. 266-269. P. 31-37.[85] Roca i Cabarrocas P., Nguyen-Tran Th., Djeridane Y., Abramov A., Jonson E., Patriarche G.Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronicdevices // J. Appl. Phys. D. 2007. Vol. 40. P. 2258-2266.[86] Roca i Cabarrocas P., Hamma S., Sharma S.N., Viera G., Bertran E., Costa J. Nanoparticleformation in low-pressure silane plasmas: bridging the gap between a-Si:H and μc-Si films // J. NonCryst. Solids.
1998. 227-230. P. 871-875.150[87] Butte R., Vignoli S., Meaudre M., Marty O., Saviot L., Roca i Cabarrocas P. Structural, opticaland electronic properties of hydrogenated polymorphous silicon films deposited at 150°C // J. NonCryst. Solids. 2000. Vol. 266-269. P. 263-268.[88] Roca i Cabarrocas P., Fontcuberta i Morral A., Possant Y. Growth and optoelectronic propertiesof polymorphous silicon thin films // Thin Solid Films. 2002. Vol. 403-404. P. 39-46.[89] Kleider J.P., Longeaud C., Gauthier M., Meaudre M., Butte R., Vignoli S., Roca i CabarrocasP.
Very low densities of localized states at the Fermi level in hydrogenated polymorphous siliconfrom capacitance and space-charge-limited current measurements // Appl. Phys. Lett. 1999. Vol. 75(21). P. 3351-3353.[90] Butte R., Meaudre R., Meaudre M., Vignoli S., Longeaud C., Kleider J.P., Roca i CabarrocasP. Some electronic and metastability properties of a new nanostructured material: Hydrogenatedpolymorphous silicon // Phil.
Mag. B. 1999. Vol. 79. P. 1079-1095.[91] Takeda K., Morigaki K., Hikita H., Roca i Cabarrocas P. Thermal annealing effects of danglingbonds in hydrogenated polymorphous silicon// J. Appl. Phys. 2008. Vol. 104, 053715-1-053715-6.[92] Khait Y. L., Beserman R., Chack A., Weil R. Kinetics of laser-induced low-temperaturecrystallization of amorphous silicon // Appl. Phys. Lett. 2002.
Vol. 81, 18, P. 3347-3349.[93] Momma C., Chichkov B.N., Nolte S., von Alvensleben F., Tünnermann A., Welling H.,Wellegehausen B. Short-pulse laser ablation of solid targets // Optics Commun. 1996. Vol. 129. P.134–142.[94] Theodorakos I., Zergioti I., Vamvakas V., Tsoukalas D., Raptis Y.S. Picosecond andnanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications// J. Appl. Phys. 2014. Vol.
115. P. 043108-1-043108-9.[95] Wagner M., Geiler H.-D., Gotz G. Time-resolved investigation of large-area explosivecrystallization of amorphous silicon layers // Phys. Stat. Sol. A. 1985. Vol. 92. P. 413-420.[96] Adikaari A.A., Silva S.R. Thickness dependence of properties of excimer laser crystallizednano-polycrystalline silicon // J. Appl. Phys. 2005. Vol. 97. P.
114305-1 – 114305-7.[97] Auvert G., Bensahel D., Perio A., Nguyen V.T., Rozgonyi G.A. Explosive crystallization of aSi films in both the solid and liquid phases // Appl. Phys. Lett. 1981. Vol. 39. P. 724-726.[98] Lowndes D.H., Jellison G.E., Pennycook S.J., Withrow S.P., Mushburn D.N. Directmeasurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers inamorphous silicon// Appl.
Phys. Lett. 1986. Vol. 48. P. 1389-1391.151[99] Bruines J.J.P., van Hal R.P.M., Boots H.M.J., Polman A., Saris F.W. Time-resolved reflectivitymeasurements during explosive crystallization of amorphous silicon// Appl. Phys. Lett. 1986. Vol.49. P. 1160-1162.[100] Thompson M.O., Galvin G.J., Mayer J.W., Peercy P.S., Poate J.M., Chew N.G. Meltingtemperature and explosive crystallization of amorphous silicon during pulsed laser irradiation //Phys. Rev. Lett. 1984.
Vol. 52. P. 2360-2364.[101] Bostanjoglo O. Time-resolved TEM of pulsed crystallization of amorphous Si and Ge films //Phys. Stat. Sol. A. 1982. Vol. 70, P. 473-481.[102] Im, J., Kim, H., Thompson, M., Phase Transformation Mechanisms Involved in ExcimerLaser Crystallization of Amorphous Silicon Films // Appl. Phys. Lett. 1993. Vol. 63(14). P. 19691971.[103] Mathe, E., Naudon, A., Elliq, M., Fogarassy, E., Unamuno, S. Influence of Hydrogen on theStructure and Surface Morphology of Pulsed ArF Excimer Laser Crystallized Amorphous SiliconThin Films // Appl.
Surf. Science. 1992. Vol. 54. P. 392-400.[104] Callan, J. P., 2000, Ultrafast Dynamics And Phase Changes In Solids Excited ByFemtosecond Laser Pulses 59–104 Thesis, Harvard Univ., Cambridge.[105] Sundaram S.K., Mazur E. Inducing and probing non-thermal transitions in semiconductorsusing femtosecond laser pulses // Nature Materials. 2006. Vol. 1. P. 217-224.[106] Saeta P., Wang J.-K., Siegal Y., Bloemberger N., Mazur E. Ultrafast electronic disorderingduring femtosecond laser melting of GaAs // Phys. Rev. Lett. 1991.
Vol. 67. P. 1023-1026.[107] Choi T.Y., Hwang D.J., Griporopoulos C.P. Ultrafast laser-induced crystallization ofamorphous silicon films // Optical Engineering. 2003. Vol. 42. P. 3383-3388.[108] Glezer, E. N., Siegel,Y., Huang, L. & Mazur, E. The behavior of chi during laser inducedphase transitions in GaAs // Phys. Rev. B.
1995. Vol. 51. P. 9589–9596.[109] Solis, J., Afonso, C. N., Trull, J. F., Morilla, M. C. Fast crystallizing GeSb alloys for opticaldata storage // J. Appl. Phys. 1994. Vol. 75. P. 7788–7794.[110] Bruines J.J.P., van Hal R.P.M., Koek B.H., Viegers M.P.A., Boots H.M.J. Between explosivecrystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed-laser annealingof amorphous silicon // Appl. Phys. Lett. 1987. Vol. 50.
P. 507-509.[111] Carluccio R., Stoemenos J., Fortunato G., Meakin D. B., Bianconi M. Microstructure ofpolycrystalline silicon films obtained by combined furnace and laser annealing // Appl. Phys. Lett.1995. Vol. 66. P. 1394-1396.152[112] Brotherton S. D., McCulloch D. J., Gowers J. P., Ayres J. R., Trainor M. J. Influence of meltdepth in laser crystallized poly-Si thin film transistors // J. Appl. Phys. 1997. Vol. 82. P. 4086 –4094.[113] Palani I.A., Vasa N.J., Singaperumal M., Okada T. Investigation on Laser-annealing andSubsequent Laser-nanotexturing of Amorphous Silicon (a-Si) Films for Photovoltaic Application //JLMN. 2010.