Диссертация (1105259), страница 30
Текст из файла (страница 30)
Vol 5 No. 2. P. 150-155.[114] Ефремов М.Д., Болотов В.В., Володин В.А., Кочубей С.А., Кретинин А.В. Образованиенанокристаллов кремния с выделенной ориентацией (110) в аморфных пленках Si:H настеклянных подложках при наносекундных воздействиях ультрафиолетового излучения //ФТП. 2002. T. 36(1). C. 109-116.[115] Voutsas A. T., Hatalis M. K., Boyce J., Chiang A.
Raman spectroscopy of amorphous andmicrocrystalline silicon films deposited by low-pressure chemical vapor deposition // J. Appl. Phys.1995. Vol. 78. P. 6999-7006.[116] Smit C., van Swaaij R.A.C.M.M., Donker H., Petit A.M.H.N., Kessels W.M.M., van deSanden M.C.M. Determining the material structure of microcrystalline silicon from Raman spectra //J. Appl. Phys. 2003.
Vol. 94. P. 3582-3588.[117] Cheng-Zhao Chen, Sheng-Hua Qiu, Cui-Qing Liu Low temperature fast growth ofnanocrystalline silicon films by rf-PECVD from SiH4/H2 gases: microstructural characterization //J. Phys. D: Appl. Phys. 2008. Vol. 41. P. 195413-195418.[118] McCulloch D.J., Brotherton S.D.
Surface roughness effects in laser crystallizedpolycrystalline silicon // Appl. Phys. Lett. 1995. Vol. 66. P. 2060-2062.[119] Properties of amorphous silicon and its alloys. Pедактор Tim Searle, INSPEC, London. 1998.[120] Gontad F., Conde J.C., Filonovich S., Cerqueira M.F., Alpuim P., Chiussi S. Study on excimerlaser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenatedamorphous/nanocrystalline silicon multilayers // Thin Solid Films. 2013. Vol. 536.
P. 147-151.[121] Carey, J.E., 2004, Femtosecond-Laser Microstructuring of Silicon for Novel OptoelectronicDevices, Ph.D. dissertation, Harvard University, Cambridge, MA.[122] Tull, B.R., Carey, J.E., Mazur, E., McDonald, J.P., Yalisove, S.M., 2006, “Silicon SurfaceMorphologies after Femtosecond Laser Irradiation”, MRS Bulletin, 31(8), pp.
626-633.[123] Fork D. K., Anderson G. B., Boyce J. B., Johnson R. I., Mei P. Capillary waves in pulsedexcimer laser crystallized amorphous silicon // Appl. Phys. Lett. 1996. Vol. 68. P. 2138-2140.153[124] McCulloch D.J., Brotherton S.D. Surface roughness effects in laser crystallizedpolycrystalline silicon // Appl.
Phys. Lett. 1995. Vol. 66. P. 2060-2062.[125] Lowndes. D.H., Fowlkes, J.D., Pedraza, A.J. Early stage of pulsed-laser growth of siliconmicrocolumns and microcones in air and SF6 // Appl. Surf. Science. 2000. Vol. 154-155. P. 647658.[126] Mathe, E., Naudon, A., Elliq, M., Fogarassy, E., Unamuno, S. Influence of Hydrogen on theStructure and Surface Morphology of Pulsed ArF Excimer Laser Crystallized Amorphous SiliconThin Films // Appl. Surf. Science. 1992. Vol.
54, pp. 392-400.[127] Lemons R. A., Bösch M. A. Periodic motion of the crystallization front during beamannealing of Si films // Appl. Phys. Lett. 1981. Vol. 39. P. 343-345.[128] Bachrach R. Z., Winer K., Boyce J. B., Ready S. E., Johnson R. I., Anderson G. B. Lowtemperature crystallization of amorphous silicon using an excimer laser // J. Electron.
Mater. 1990.Vol. 19. P. 241-248.[129] Marmorstein A., Voutsas A.T., Solanki R. A systematic study and optimization of parametersaffecting grain size and surface roughness in excimer laser annealed polysilicon thin films // J. Appl.Phys. 1997. Vol. 82.
P. 4303-4309.[130] Wang H., Kongsuwan P., Satoh G., Lawrence Yao Y. Femtosecond laser-induced surfacetexturing and crystallization of a-Si:H thin film // Proceedings of the 2010 InternationalManufacturing Science and Engineering Conference, MSEC2010-34271. Erie, Pennsylvania, USA.2010. P. 1-10.[131] Daminelli G., Kruger J., Kautek W.
Femtosecond Laser Interaction with Silicon Under WaterConfinement // Thin Solid Films. 2004. Vol. 467. 334-341.[132] Rotaru C., Nastase S., Tomozieu N. Amorphous Phase Influence on the Optical Bandgap ofPolysilicon // Phys. Stat. Solidi A. 1999. Vol. 171. P. 365-370.[133] Palani I.A., Vasa N.J., Singaperumal M. Crystallization and ablation in annealing ofamorphous-Si thin film on glass and crystalline-Si substrates irradiated by third harmonics ofNd3+:YAG laser // Material Science in Semiconductor Processing. 2008. Vol. 11. P.
107-114.[134] Winer K., Anderson G. B., Ready S. E., Bachrach R. Z., Johnson R. I., Ponce F. A., Boyce J.B. Excimer-laser-induced crystallization of hydrogenated amorphous silicon // Appl. Phys. Lett.1990. Vol. 57. P. 2222-2224.154[135] Ivlev G., Gatskevich E., Chab V., Stuchlik J., Vorlicek V., Kocka J. Dynamics of the excimerlaser annealing of hydrogenated amorphous silicon thin films // Appl. Phys. Lett.. 1999. Vol. 75.
P.498-500.[136] Sridhar N., Chung D.D.L., Anderson W.A., Coleman J. Effect of deposition temperature onthe structural and electrical properties of laser-crystallized hydrogenated amorphous silicon films //J. Appl. Phys. 1996. Vol. 79. P. 1569-1577.[137] Vaněček M., Kočka J., Stuchlik J., Kožišek Z., Štika O., Třiska A. Density of the gap states inundoped and doped glow discharge a-Si:H // Sol. Energy Mater. 1983. Vol. 8(4). P.
411-423.[138] Liao N.M., Li W., Jiang Y.D., Kuang Y.J., Qi K.C., Wu Z.M., and Li S.B. Raman study of aSi:H films deposited by PECVD at various silane temperatures before glow-discharge // Appl. Phys.A. 2008. Vol. 91. P. 349-352.[139] Гайслер С.В., Семенова О.И., Шарафутдинов Р.Г., Колесов Б.А. Анализ рамановскихспектров аморфно-нанокристаллических пленок кремния // ФТТ. 2004. Т. 46.
С. 1484-1488.[140] Campbell I.H., Fauchet P.M. The effects of microcrystal size and shape on the one phononRaman spectra of crystalline semiconductors // Solid State Commun. 1986. Vol. 58(10). P. 739-741.[141] Голубев В.Г., Давыдов В.Ю., Медведев А.В., Певцов А.Б., Феоктистов Н.А.
Спектрырамановского рассеяния и электропроводность тонких пленок кремния со смешаннымаморфно-нанокристаллическимфазовымсоставом:определениеобъемнойдолинанокристаллической фазы // ФТТ. 1997. Т. 39. С. 1348.[142] Zi J., Buscher H., Falter C., Ludwig W., Zhang K., Xie X. Raman shifts in Si nanocrystals //Appl. Phys. Lett. 1996. Vol. 69.
P. 200-202.[143] Viera G., Huet S., Boufendi L. Crystal size and temperature measurements in nanostructuredsilicon using Raman spectroscopy // J. Appl. Phys. 2001. Vol. 90. P. 4175-4183.[144] Gupta S., Kaijar R.S., Morell G., Weisz S.Z., I. Balberg The effect of hydrogen on thenetwork disorder in hydrogenated amorphous silicon // Appl. Phys. Lett. 1999. Vol. 75, P. 28032805.[145] Fuhs W., Welsch H.W., Booth D.C. Optical Quenching of Photoconductivity in a-Si: H Films// Phys. Status Solidi B. 1983. Vol.
120. P. 197-205.[146] Shmidt M., Korte L., Laades A., Stangl R., Schubert Ch., Angermann H., Conrad E., MaidelK.V. Physical aspects of a-Si:H/c-Si hetero-junction solar cells // Thin Solid Films. 2007. Vol. 515.P. 7475-7480.155[147] Main C., Reinolds S., Zrinscak I., Merazga A. Comparison of AC and DC constantphotocurrent methods for determination of defect densities // J. Non-Cryst. Solids.
2004. Vol. 338340. P. 228-231.[148] Platz R., Bruggemann R., Bauer G.H. More insights from simulation for the interpretation ofthe constant photocurrent method // J. Non-Cryst. Solids. 1993. Vol. 164-16. P. 355-358.[149] Murayama K., Monji K., Deki H. Luminescence from hydrogen-free silicon nanostructures inamorphous hydrogenated silicon// Phys. Status. Solidi C. 2010. Vol. 7. P. 674-678.[150] Tanielian M., Chatani M., Fritzsche H., Šmíd V., Persans P.D.
Effect of adsorbates andinsulating layers on the conductance of plasma deposited a-Si:H // J. of Non-Cryst. Solids. 1980.Vol. 35-36. P. 575-580.[151] Smirnov V., Reynolds S., Main C., Finger F., Carius R. Aging effects in microcrystallinesilicon films studied by transient photoconductivity // J. of Non-Cryst. Solids. 2004. Vol. 338-340.P. 421-424.[152] Smirnov V., Reynolds S., Finger F., Main C., Carius R. Metastable effects in silicon thinfilms: Atmospheric adsorption and light-induced degradation //J. of Non-Cryst.
Solids. 2006. Vol.352. P. 1075-1078.[153] Tsang C., Street R.A. Recombination in plasma-deposited amorphous Si:H. Luminescencedecay // Phys. Rev. B. 1979. Vol. 19. P. 3027-3040.[154] Belolipetskiy A.V., Gusev O.B., Dmitriev A.P., Terukov E.I., Yassievich I.N. Trions insilicon nanocrystals in an amorphous hydrogenated silicon matrix // Semiconductors. 2014. Vol.48(2). P.
235-238.[155] Finger F., Muller J., Malten C., Carrius R., Wagner H., Electronic properties ofmicrocrystalline silicon investigated by electron spin resonance and transport measurements // J.Non-Cryst. Solids. 2000. Vol. 266-269. P. 511-518.[156] А. Роуз, Основы теории фотопроводимости, М. «Мир», с. 192 (1966).156[157] Kochka J., Mates T., Ledinsky M., Stuchlikova H., Stuchlic J., Fejfar A. Transport propertiesof microcrystalline silicon, prepared at high growth rate // J. Non-Cryst. Solids. 2006. Vol. 352.
P.1097-1100.[158] Spear W.E., Loveland R.J., Al-Sharbaty A. The temperature dependence f photoconductivityin a-Si // J. Non-Cryst. Solids. 1974. Vol. 15. P. 410-422.[159] Sakata I., Kamei T., Yamanaka M. Effects of oxygen impurity on the energy distribution ofgap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy //Phys. Rev. B. 2007. Vol. 76, P.
075206-1- 075206-8.[160] Bruno G., Capezzuto P., Giangregorio M.M., Bianco G.V., Losurdo M. From amorphous tomicrocrystalline silicon: Moving from one to the other by halogenated silicon plasma chemistry //Phil. Mag. 2009. Vol. 89 (28-30). P. 2469-2489.[161] Shibata N., Oda S., Shimizu I. Hole Transport in Silicon Thin Films with Variable HydrogenContent // Jpn.
J. Appl. Phys. 1987. Vol. 26. P. L276.[162] Bovatsek J., Tamhankar A., Patel R.S., Bulgakova N.M., Bonse J. Thin film removalmechanisms in ns-laser processing of photovoltaic materials // Thin Solid Films. 2010. Vol. 518. P.2897–2904.[163] Her T.-H., Finlay R. J., Wu C., Mazur E. Femtosecond laser-induced formation of spikes onsilicon // Appl. Phys. A. 2000. Vol. 70. P. 383-385.[164] Bonse J., Rosenfeld A., Krüger J. On the role of surface plasmon polaritons in the formationof laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses //J. Appl. Phys. 2009. Vol. 106. P.