Диссертация (1104250), страница 10
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С учетом окисления оболочки нанокристаллов наблюдается ярковыраженная корреляция между приведенными выше зависимостями.7. Установлено, что максимальная фотопроводимость в структурах SnO2-QD привнедрении в матрицу гетероэпитаксиальных нанокристаллов CdSe/CdS достигается притолщине оболочки CdS в 2 монослоя. Указаны основные факторы, влияющие наамплитудусигнала:уменьшениевкладабезызлучательнойрекомбинациивнанокристаллах и дефектообразование как механизм снятия механических напряжений.102Список Литературы1. К. Дроздов, В.
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