Диссертация (1149983), страница 19
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Biswas, E. Vescovo, A. Rybkin,D. Marchenko, O. Rader // Phys. Rev. Lett. – 2008. – Т. 101. – № 15. – С. 157601.22.Varykhalov, A. Effect of noble-metal contacts on doping and band gap of graphene /A. Varykhalov, M.R. Scholz, T.K. Kim, O. Rader // Phys. Rev. B. – 2010. – Т.
82. – № 12. –С. 121101.23.Usachov, D.Y. Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene /D.Y. Usachov, A. V. Fedorov, O.Y. Vilkov, A.E. Petukhov, A.G. Rybkin, A. Ernst,M.M. Otrokov, E. V. Chulkov, I.I. Ogorodnikov, M.V. Kuznetsov, L. V. Yashina, E.Y. Kataev,98A.V.
Erofeevskaya, V.Y. Voroshnin, V.K. Adamchuk, C. Laubschat, D. V. Vyalikh // NanoLett. – 2016. – Т. 16. – № 7. – С. 4535–4543.24.Marchenko, D. Giant Rashba splitting in graphene due to hybridization with gold /D. Marchenko, A. Varykhalov, M.R. Scholz, G. Bihlmayer, E.I. Rashba, A. Rybkin,A.M. Shikin, O.
Rader // Nat. Commun. – 2012. – Т. 3. – № 1. – С. 1232.25.Шикин, А.М. Формирование, электронная структура и свойства низкоразмерныхструктур на основе металлов / А.М. Шикин. – Санкт-Петербург: ВВМ, 2011. – 432 с.26.Wei, P. Strong interfacial exchange field in the graphene/EuS heterostructure / P. Wei, S.
Lee,F. Lemaitre, L. Pinel, D. Cutaia, W. Cha, F. Katmis, Y. Zhu, D. Heiman, J. Hone, J.S. Moodera,C.-T. Chen // Nat. Mater. – 2016. – Т. 15. – № 7. – С. 711–716.27.Dedkov, Y.S. Electronic and magnetic properties of the graphene–ferromagnet interface /Y.S. Dedkov, M. Fonin // New J. Phys. – 2010. – Т.
12. – № 12. – С. 125004.28.Rybkin, A.G. Magneto-Spin–Orbit Graphene: Interplay between Exchange and Spin–OrbitCouplings / A.G. Rybkin, A.A. Rybkina, M.M. Otrokov, O.Y. Vilkov, I.I. Klimovskikh,A.E. Petukhov, M.V. Filianina, V.Y. Voroshnin, I.P. Rusinov, A. Ernst, A. Arnau,E.V. Chulkov, A.M. Shikin // Nano Lett. – 2018. – Т. 18. – № 3. – С. 1564–1574.29.Pudikov, D.A. Electronic structure of graphene on Ni surfaces with different orientation /D.A.
Pudikov, E.V. Zhizhin, A.G. Rybkin, A.A. Rybkina, Y.M. Zhukov, O.Y. Vilkov,A.M. Shikin // Mater. Chem. Phys. – 2016. – Т. 179. – С. 189–193.30.Пудиков, Д.А. Электронная структура графена на поверхностях Ni(111) и Ni(100) /Д.А. Пудиков, Е.В. Жижин, А.Г. Рыбкин, А.А. Рыбкина, Ю.М. Жуков, О.Ю. Вилков,А.М. Шикин // Физика твердого тела. – 2016. – Т. 58. – № 12. – С. 2459–2463.31.Жижин Е.В. Синтез и электронная структура графена на пленке никеля, адсорбированнойна графите / Е.В.
Жижин, Д.А. Пудиков, А.Г. Рыбкин, П.Г. Ульянов, А.М. Шикин //Физика твердого тела. – 2015. – Т. 57. – № 9. – С. 1839–1845.32.Zhizhin, E.V. Growth of graphene monolayer by “internal solid-state carbon source”: Electronicstructure, morphology and Au intercalation / E.V. Zhizhin, D.A. Pudikov, A.G.
Rybkin,A.E. Petukhov, Y.M. Zhukov, A.M. Shikin // Mater. Des. – 2016. – Т. 104. – С. 284–291.33.Pudikov, D.A. Graphene fabrication via carbon segregation through transition metal films /D.A. Pudikov, E.V. Zhizhin, A.G. Rybkin, A.M. Shikin // Thin Solid Films. – 2018. – Т. 648.34.Шевелев В.О.
Синтез графена через фазу карбидизации Gd на пиролитическом графите /В.О. Шевелев, Е.В. Жижин, Д.А. Пудиков, И.И. Климовских, А.Г. Рыбкин,В.Ю. Ворошнин, А.Е. Петухов, Г.Г. Владимиров, А.М. Шикин // Физика твердого тела. –2015. – Т. 57. – № 11. – С. 2272–2277.35.Neto, A.C. Drawing conclusions from graphene / A.C. Neto, F. Guinea, N.M. Peres // Phys.99World. – 2006. – Т. 19.
– № 11. – С. 33–37.36.Trucano, P. Structure of graphite by neutron diffraction / P. Trucano, R. Chen // Nature. – 1975.– Т. 258. – № 5531. – С. 136–137.37.Wallace, P.R. The band theory of graphite / P.R. Wallace // Phys. Rev. – 1947. – Т. 71. – № 9. –С. 622–634.38.Partoens, B. From graphene to graphite: Electronic structure around the K point / B. Partoens,F.M. Peeters // Phys. Rev. B. – 2006.
– Т. 74. – № 7. – С. 75404.39.Güttinger, J. Transport through graphene quantum dots / J. Güttinger, F. Molitor, C. Stampfer,S. Schnez, A. Jacobsen, S. Dröscher, T. Ihn, K. Ensslin // Reports Prog. Phys. – 2012. – Т. 75. –№ 12. – С. 126502.40.Морозов, С.В. Электронный транспорт в графене / С.В. Морозов, К.С. Новоселов,А.К. Гейм // Uspekhi Fiz. Nauk.
– 2008. – Т. 178. – № 7. – С. 776.41.Ohta, T. Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigatedwith Angle-Resolved Photoemission Spectroscopy / T. Ohta, A. Bostwick, J.L. McChesney,T. Seyller, K. Horn, E. Rotenberg // Phys. Rev. Lett. – 2007. – Т. 98. – № 20. – С. 206802.42.Wu, Y. High-frequency, scaled graphene transistors on diamond-like carbon / Y. Wu, Y. Lin,A.A. Bol, K.A.
Jenkins, F. Xia, D.B. Farmer, Y. Zhu, P. Avouris // Nature. – 2011. – Т. 472. –№ 7341. – С. 74–78.43.Das, S. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor /S. Das, R. Gulotty, A. V. Sumant, A. Roelofs // Nano Lett. – 2014. – Т. 14. – № 5. – С. 2861–2866.44.Lee, J.H. Nanometer Thick Elastic Graphene Engine / J.H. Lee, J.Y. Tan, C.-T. Toh,S.P. Koenig, V.E.
Fedorov, A.H. Castro Neto, B. Özyilmaz // Nano Lett. – 2014. – Т. 14. –№ 5. – С. 2677–2680.45.Zhou, S.Y. Departure from the conical dispersion in epitaxial graphene / S.Y. Zhou,D.A. Siegel, A.V. Fedorov, A. Lanzara // Phys. E Low-dimensional Syst. Nanostructures. –2008. – Т.
40. – № 7. – С. 2642–2647.46.Shelton, J.C. Equilibrium segregation of carbon to a nickel (111) surface: A surface phasetransition / J.C. Shelton, H.R. Patil, J.M. Blakely // Surf. Sci. – 1974. – Т. 43. – № 2. – С. 493–520.47.Eizenberg, M. Carbon monolayer phase condensation on Ni(111) / M. Eizenberg, J.M. Blakely// Surf. Sci. – 1979. – Т. 82. – № 1. – С. 228–236.48.Yu, Q. Graphene segregated on Ni surfaces and transferred to insulators / Q.
Yu, J. Lian,S. Siriponglert, H. Li, Y.P. Chen, S.-S. Pei // Appl. Phys. Lett. – 2008. – Т. 93. – № 11. –С. 113103.10049.Reina, A. Growth of large-area single- and Bi-layer graphene by controlled carbon precipitationon polycrystalline Ni surfaces / A. Reina, S. Thiele, X. Jia, S. Bhaviripudi, M.S.
Dresselhaus,J.A. Schaefer, J. Kong // Nano Res. – 2009. – Т. 2. – № 6. – С. 509–516.50.Kim, K.S. Large-scale pattern growth of graphene films for stretchable transparent electrodes /K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, K.S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi,B.H. Hong // Nature. – 2009. – Т. 457. – № 7230.
– С. 706–710.51.Odahara, G. In-situ observation of graphene growth on Ni(111) / G. Odahara, S. Otani,C. Oshima, M. Suzuki, T. Yasue, T. Koshikawa // Surf. Sci. – 2011. – Т. 605. – № 11–12. –С. 1095–1098.52.Patera, L.L. In Situ Observations of the Atomistic Mechanisms of Ni Catalyzed LowTemperature Graphene Growth / L.L. Patera, C. Africh, R.S. Weatherup, R. Blume,S. Bhardwaj, C. Castellarin-Cudia, A. Knop-Gericke, R. Schloegl, G. Comelli, S.
Hofmann,C. Cepek // ACS Nano. – 2013. – Т. 7. – № 9. – С. 7901–7912.53.Lahiri, J. Graphene Growth on Ni(111) by Transformation of a Surface Carbide / J. Lahiri,T. Miller, L. Adamska, I.I. Oleynik, M. Batzill // Nano Lett. – 2011. – Т. 11. – № 2. – С. 518–522.54.Xu, M. Production of Extended Single-Layer Graphene / M. Xu, D. Fujita, K. Sagisaka,E. Watanabe, N.
Hanagata // ACS Nano. – 2011. – Т. 5. – № 2. – С. 1522–1528.55.Аншмидт, И.Д. Адсорбция атомов углерода на поверхности оксида кремния: раб. насоиск. степени магистра физики / Аншмидт Илья Дмитриевич. – Санкт-Петербург :Санкт-Петербургский государственный университет, 2011. – 54 с.56.Zheng, M. Metal-catalyzed crystallization of amorphous carbon to graphene / M.
Zheng,K. Takei, B. Hsia, H. Fang, X. Zhang, N. Ferralis, H. Ko, Y.-L. Chueh, Y. Zhang,R. Maboudian, A. Javey // Appl. Phys. Lett. – 2010. – Т. 96. – № 6. – С. 63110.57.Juang, Z.Y. Synthesis of graphene on silicon carbide substrates at low temperature / Z.Y. Juang,C.Y. Wu, C.W. Lo, W.Y. Chen, C.F.
Huang, J.C. Hwang, F.R. Chen, K.C. Leou, C.H. Tsai //Carbon. – 2009. – Т. 47. – № 8. – С. 2026–2031.58.Yoneda, T. Graphene on SiC(0001) and SiC(0001) surfaces grown via Ni-silicidation reactions /T. Yoneda, M. Shibuya, K. Mitsuhara, A. Visikovskiy, Y. Hoshino, Y. Kido // Surf. Sci. – 2010.– Т. 604. – № 17–18. – С. 1509–1515.59.Hoshino, Y. Structure change of ultra-thin Ni-deposited 6H-SiC(0001)-3×3 surface by postannealing / Y.
Hoshino, O. Kitamura, T. Nakada, Y. Kido // Surf. Sci. – 2003. – Т. 539. – № 1–3. – С. 14–20.60.Hoshino, Y. Interfacial reactions between ultra-thin Ni-layer and clean 6H-SiC(0001) surface /Y. Hoshino, S. Matsumoto, T. Nakada, Y. Kido // Surf. Sci. – 2004. – Т. 556. – № 2–3. – С. 78.10161.Шикин, А.М.
Взаимодействие фотонов и электронов с твердым телом / А.М. Шикин. –Санкт-Петербург: ВВМ, 2008. – 294 с.62.Seah, M.P. Quantitative electron spectroscopy of surfaces: A standard data base for electroninelastic mean free paths in solids / M.P. Seah, W.A. Dench // Surf. Interface Anal. – Heyden &Son Ltd, 1979. – Т. 1. – № 1. – С. 2–11.63.Saiht.
Общий принцип фотоэлектронной спектроскопии [Электронный ресурс] / Saiht. –URL: https://upload.wikimedia.org/wikipedia/ru/3/33/Угловое_разрешение_фотоэлектронной_спектроскопии.png.64.Shirley, D.A. High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold /D.A. Shirley // Phys. Rev. B. – 1972. – Т. 5. – № 12. – С. 4709–4714.65.Tougaard, S.
Quantitative analysis of the inelastic background in surface electron spectroscopy /S. Tougaard // Surf. Interface Anal. – 1988. – Т. 11. – № 9. – С. 453–472.66.Mott, N.F. The Scattering of Fast Electrons by Atomic Nuclei / N.F. Mott // Proc. R. Soc. AMath. Phys. Eng. Sci. – 1929.