Диссертация (1102573), страница 23
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299-302.39. Matino, F., Persano, L., Arima, V. et al.. Electronic structure of indium-tin-oxide filmsfabricated by reactive electron-beam deposition // Phys. Rev. B. – 2005. – v.72. – p. 085437-1- 6.40. Walsh ,A., Da Silva, J.L.F., Wei, S.H. Nature of the Band Gap of In2O3 Revealed by FirstPrinciples Calculationsand X-Ray Spectroscopy // Phys.
Rev. Lett. – 2008. – v.100. – p.167402- 1- 4.41. King, P.D.C., Veal, T.D. et al. Band gap, electronic structure, and surface electronaccumulation of cubicand rhombohedral In2O3 // Phys. Rev. B. -2009. – v.79. –p. 205211-1-10.42. Nunes, P., Fortunato, E., Tonello, P.
et al. Effect of different dopant elements on theproperties of ZnO thin films // Vacuum. -2002. - v.64. – p.281-285.43. Kumar, R. , Khare, N. Temperature dependence of conduction mechanism of ZnO and Codoped ZnO thin films // Thin Solid Films. – 2008. – v.516. – p. 1302-1307.44. Andrearczyk, T., Jaroszyński, J., Grabecki, G. et al. Spin-related magnetoresistance of ntype ZnO:Al and Zn1−xMnxO:Al thin films // Phys.
Rev. B. – 2005. – v.72. – p. 121309-1-4.45. Frank, G., Kostlin, H. Electrical Properties and Defect Model of Tin-Doped Indium OxideLayers // Appl. Phys. A. - 1982. – v.27 – p. 197-206.46. Mizuhashi, M. Electrical properties of vacuum-deposited indium oxide and indium tinoxide films // Thin Solid Films. – 1980. – v.70 – p. 91-100.47. Ryabova, L.A., Salun, V.S., Serbinov, I.A. Transparent conductive films of In2O3:Snprepared by the pyrolysis method // Thin Solid Films. – 1982. – v.92. - p. 327-332.48. Аскеров, Б.М. Электронные явления переноса в полупроводниках.
- М.: Наука Гл.ред. физ.-мат. лит., 1985. -320 с.12549. Seto, J.Y.W. The electrical properties of polycrystalline silicon films // J. Appl. Phys. –v.46. – 1975. – p. 5247-5254.50. Ellmer, K., Mientus, R. Carrier Transport in Polycrystalline Transparent ConductiveOxides: A Comparative Study of Zinc Oxide and Indium Oxide // Thin Solid Films.
– 2008. – v.516. –pp.4620-4627.51. Makino, T., Segawa, Y., Tsukazaki. A. et. al. Electron transport in ZnO thin films // Appl.Phys. Lett. – 2005. – v.87. – p.022101-1-3.52. Makino, T., Segawa, Y., Tsukazak, A. et al. Majority-carrier mobilities in undoped and ntype doped ZnO epitaxial layers // Phys. stat. sol. (c). – 2006. – v.3. – No. 4.
– p. 956- 959.53. Minami, T., Sato, H., Ohashi, K. et al. Conduction mechanism of highly conductive andtransparent zinc oxide thin films prepared by magnetron sputtering // J. Cryst.Growth. – 1992. –v.117.– p.370-374.54. Brehme, S., Fenske, F., Fuhs, W. et al. Free-carrier plasma resonance effects and electrontransport in reactively sputtered degenerate ZnO:Al films // Thin Solid Films. – 1999. – v.342. –p.167-173.55.
Kon, M., Song, P.K., Shigesato, Y. et al. Impedance Control of Reactive Sputtering Processin Mid-Frequency Mode with Dual Cathodes to Deposit Al-Doped ZnO Films // Jpn. J. Appl. Phys. –2003. – v.42. – p. 263 – 269.56. Tahar, R.B.H., Ban, T., Ohya, Y., Takahashi Y. Tin doped indium oxide thin films:Electrical properties // J. Appl. Phys. – 1998. – v.83. – No.5. - p.
2631- 2645.57. Na, J.G. , Cho, Y.R., Kim, Y.H. et al. Effects of Annealing Temperature on Microstructureand Electrical and Optical Properties of Radio-Frequency-Sputtered Tin-Doped Indium Oxide Films //J. Am. Ceram Soc. – 1989. – v.72. – No.4. – p. 698-701.58. Shigesato, Y., Paine, D.C. Study of the effect of ion implantation on the electrical andmicrostructural properties of tin-doped indium oxide thin films // J. Appl.
Phys.- 1993. – v.73 –p. 3805- 3811.59. Gerlach, E., Rautenberg, M. Ionized impurity scattering in semiconductors // Phys. Stat. SolB. – 1978. – v.86 – p.479-482.60. Шкловский, Б.И., Эфрос, А.Л. Физика неупорядоченных полупроводников – М.:Наука, 1979. – 416 c.61. Lien, C.C., Wu, C.Y., Li, Z.Q. et al. Electrical conduction processes in ZnO in a widetemperature range 20–500K // J. Appl. Phys. – 2011. – v.110. – p. 063706-1-7.62. Huang, Y.L., Chiu, S.P., Zhu, Z.X., Li, Z.Q. Variable-range-hopping conduction processesin oxygen deficient polycrystalline ZnO films // J. Appl.
Phys. – 2010. – v.107. – p.063715-1-6.63. Rosenbaum, R. Crossover from Mott to Efros-Shklovskii variable-range-hopping126conductivity in InxOy films // Phys. Rev. B. – 1991. – v.44. – No.8. – p.3599- 3603.64. Graham, M.R., Bellingham, J.R., Adkins, C.J. Hopping conduction near the metal-insulatortransition in amorphous indium oxide // Philos. mag. B. – 1992. –v.65. – No.4. – p. 669-673.65.
Alia, H.M., Mohameda, H.A., Mohameda, S.H. Enhancement of the optical and electricalproperties of ITO thin films deposited by electron beam evaporation technique // Eur. Phys. J. Appl.Phys. – 2005. – v.31. – p. 87-93.66. Meir, Y. Universal spin-induced magnetoresistance in the variable-range hopping regime //Europhys. Lett. – 1996. – v.33(6). – p.471 - 476.67. Medina, E., Kardar, M. Spin-Orbit Scattering and Magnetoconductance of StronglyLocalized Electrons // Phys. Rev. Lett. – 1991. – v.66. – No. 24.
– p.3187-3190.68. Matveev, K.A., Glazman, L.I., Clarke, P. et al. Theory of hopping magnetoresistanceinduced by Zeeman splitting // Phys. Rev. B. – 1995. – v.52. – No.7. - p. 5289 - 5297.69. Nenashev, A.V., Jansson, F., Wiemer, M. et al. Scaling approach to hoppingmagnetoresistivity in dilute magnetic semiconductors // Phys. Rev. B. – 2013.
– v.88. – p.115210 –16.70. Yan, S.S., Liu, J. P., Mei, L. et al. Spin-dependent variable range hopping andmagnetoresistance in Ti1−xCoxO2 and Zn1−xCoxO magnetic semiconductor films // J. Phys. Condens.Matter. – 2006. – v.18. – p.10469-10480.71. Petukhov, A. G., Foygel, M. Bound magnetic polaron hopping and giant magnetoresistancein magnetic semiconductors and nanostructures // Phys. Rev. B.
– 2000. – v.62. – No.1. – p. 520- 531.72. Tian, Y.F., Antony, J., Souza, R. et al. Giant positive magnetoresistance in Co-doped ZnOnanocluster films // J.Appl. Phys. Lett. – 2008. – v.92. – p.192109-1-3.73. Xu, Q., Hartmann, L., Schmidt, H. and et al. Magnetoresistance and anomalous Hall effectin magnetic ZnO films // J. Appl.
Phys. – 2007. – v.101. – p. 063918-1-5.74. Tian, Y.F., Li, Y.F., Wu, T. Tuning magnetoresistance and exchange coupling in ZnO bydoping transition metals // J. Appl. Phys. – 2011. – v. 99. – p.222503-1-3.75. Norton, D.P., Ivill, M.P., Hebard, A.F. et al. ZnO doped with Transition metal ions // IEEETrans. Electron Devices – 2007.
– v.54. – No.5 – p.1040-1048.76. Xu, Q., Hartmann, L., Schmidt, H. et al. Metal-insulator transition in Co-doped ZnO:Magnetotransport properties // Phys. Rev. B. – 2006. – v.73. – p.205342-1-5.77. Lee, P.A., Fisher, D.S. Anderson Localization in Two Dimensions // Phys. Rev. Lett. –1981. –v.47 – No.12. - p.882-885.78. Nguen, V.L., Spivak, B.Z., Shklovskii, B.I. Tunnel hopping in disordered systems // Sov.Phys. JETP. – 1985. – v.62. – No.5. – p. 1021-1029.79.
Faran, O., Ovadyahu, Z. Magnetoconductance in the variable-range-hopping regime due to127a quantum-interference mechanism // Phys. Rev. B. – 1988. – v.38. – No.8. – p.5457-5465.80. Sivan, U. , Entin-Wohlman, O., Imry, Y. Orbital magnetoconductance in the variable rangehopping regime // Phys. Rev. Lett. – 1988. – v.60. – p.1566-1569.81.
Entin-Wohlman, O., Imry, Y., Sivan, U. Orbital magnetoconductance in the variable-rangehopping regime // Phys. Rev. B. - 1989. – v.40. – No.12. – p. 8342-8348.82. Su, T.I., Wang, C.R., Lin, S.T., Rosenbaum, R.. Magnetoresistance of Al70Pd22.5Re7.5quasicrystals in the variable-range hopping regime // Phys. Rev. B. – 2002. – v.66. – p. 054438-1-6.83. Milner, A, Hannahs, S., Murphy, T. et al. Magnetoresistance of an insulating amorphousnickel-silicon film in large magnetic fields // Physica B – 2001. – v.294-295.
– p. 340 -342.84. Fujimoto, A., Yoshida, K., Higaki, T. et al. Negative Magnetoresistance of Indium TinOxide Nanoparticle Thin Films Grown by Chemical Thermolysis // J. Phys. Soc. Jpn. – 2013. – v.82. –p. 024710-1-7.85. Kawabata, A. Theory of negative magnetoresistance I. Application to heavily dopedsemiconductors // J. Phys. Soc. Jpn. – 1980. – v.49. – No. 2.
– p. 628-637.86. Altshuler, B. L., Khmel'nitzkii, D. E., Larkin, A. I., Lee, P.A. Magnetoresistance and Halleffect in disordered two-dimensional electron gas // Phys. Rev. B. – 1980. – v.22. – p. 5142-5153.87. Altshuler, B.L., Aronov, A.G. Electron- electron Interactions in Disordered Systems //Modern Problems in Condensed Matter Sciences. – 1985. – v.10. – p.
1-154.88. Lee, P.A., Ramakrishnan, T.V. Disordered electronic systems // Rev.Mod. Phys. – 1985. –v.57. – No.2. - p.287 - 337.89. Полянская, Т.А., Шмарцев, Ю.В. Квантовые поправки к проводимости вполупроводниках с двумерным и трехмерным электронным газом // ФТП. – 1989. - т.23. – в.1. –c.3-32.90. Wang, D.F., Kim, J.M., Seo, M.S. et al. Magnetoresistance in ZnO induced by spinsplitting and weak localization // Mater. Chem. Phys. – 2012. – v.134.
– p. 74 – 79.91. Millis, A.J., Lee, P.A. Spin-orbit and paramagnon effects on magnetoconductance andtunneling // Phys. Rev. B. – 1984. – v.30. – No.10. – p. 6170-6173.92. Bhosle, V., Tiwari, A., Narayan, J. Electrical properties of transparent and conducting Gadoped ZnO // J. Appl.Phys. – 2006. – v.100.
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