Диссертация (1150509), страница 15
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Chung, T. Hogan, J. Schindler, L. Iordanidis, P. Brazis,C. R. Kannewurf, B. Chen, C. Uher, M. G. Kanatizidis, “Complex BismuthChalcogenides as Thermoelectrics”, 16th Int. Conf. Thermoelectr. 459 (1997).[56] R. Venkatasubramanian, E. Siivola, T. Colpitts, B. O’Quinn, “Thin-filmthermoelectric devices with high room-temperature figures of merit”, Nat. 413, 597(2001).[57] A. Saji, S. Ampili, S.-H. Yang, K. J.
Ku, M. J. Elizabeth, “Effects of doping,electron irradiation, H + and He + implantation on the thermoelectric properties ofBi2Se3 single crystals”, Phys.: Condens. Matter 17, 2873 (2005).[58] D. Parker, D. J. Singh, “Potential Thermoelectric Performance fromOptimization of Hole-Doped Bi2Se3”, Phys. Rev. X 1, 021005 (2011).[59] B. A. Volkov, O.
A. Pankratov, “Two-dimensional massless electrons in aninverted contact”, JETP Lett., 42, 145 (1985).115[60] L. G. Gerchikov, A. V. Subashev, “Interface States in Subband Structure ofSemiconductor Quantum Wells”, Phys. Stat. Sol. (b) 160, 443 (1990).[61] J. E. Moore, “The birth of topological insulators”, Nat. 464, 194 (2010).[62] G. Li, W. Hanke, G. Sangiovanni, B.
Trauzettel, “Interacting weaktopological insulators and their transition to Dirac semimetal phases”, Phys. Rev. B 92,235149 (2015).[63] W. Zhang, R. Yu, H.-J. Zhang, X. Dai, Z. Fang, “First-principles studies ofthe three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3”, New J.Phys., 12, 065013, (2010).[64] K. Kobayashi, T. Ohtsuki, K.-I. Imura, “Disordered Weak and StrongTopological Insulators”, Phys. Rev. Lett. 110, 236803 (2013).[65] B. Sbierski, M. Schneider, P. W. Brouwe, “Weak side of strong topologicalinsulators”, Phys. Rev.
B 93, 161105(R) (2016).[66] С. И. Веденеев, “Квантовые осцилляции в трехмерных топологическихизоляторах”, Успехи физических наук 187, 411 (2017).[67] J. C. Y. Teo, L. Fu, C. L. Kane, “Surface states and topological invariants inthree-dimensional topological insulators: Application to Bi 1−xSbx”, Phys. Rev. B 78,045426 (2008).[68] H.-J. Zhang, С.-X. Liu, X.-L. Qi, X.-Y. Deng, X. Dai, S.-C. Zhang, Z.
Fang,“Electronic Stiuctures and Surface States ol Topological Insulator Bi 1-xSbx”, Phys. Rev.В 80, 085307 (2009).[69] H.-J. Zhang, С.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, S.-C. Zhang, “TopologicalInsulators at Room Temperature”, arXiv:0812.1622v1 (2008).[70] A.
Abragam, Principles of Nuclear Magnetism (Oxford University Press,Oxford 1985).[71] R. M. Golding, L. C. Stubbs, “NMR shifts in paramagnetic systems: a116nonmultipole expansion method”, J. Magn. Reson. 33, 627 (1979).[72] W. D. Knight, “NMR Shift in Metals”, Phys. Rev. 76, 1259 (1949).[73] T. P. Das, E. H. Sondheimer, “Diamagnetic shielding of nuclei in metals”,Phil. Mag. 5, 529 (1960).[74] R. E. Watson, L. H. Bennett, G.
C. Carter, I. D. Weisman, “Comments onthe Knight Shift in Bismuth and Other p-Band Diamagnetic Metals”, Phys. Rev. B 3,222 (1971).[75] S. Misra, G. S. Tripathi, P. K. Misra, “Theory of the Knight shift in narrowgap semiconductor”, J. Phys. C: Solid State Phys. 20, 277 (1987).[76] H. M. Vieth, S. Vega, N. Yellin, D. Zamir, “Temperature dependence of theNMR line shifts and T1 relaxation times of tellurium-125 in the semiconductor alloysmercury cadmium telluride”, J. Phys.
Chem. 95, 1420 (1991).[77] D. Freude, J. Haase, Quadrupole Effects in Solid-State Nuclear MagneticResonance (Fachbereich Physik der Universitat Leipzig, 0-7010 Leipzig, FRG 2016).[78] U. Haeberlen, High Resolution NMR in Solids (Selective Averaging,Academic Press, New York, San Francisco, London, 1976).[79] R. K.
Harris, E. D. Becker, S. M. C. De Menezes, P. Granger,R. E. Hoffman, K. W. Zilm, “Further Conventions for NMR Shielding and ChemicalShifts (IUPAC Recommendations 2008)”, Pure Appl. Chem. 80, 59 (2008).[80] P. W. Bridgman, “Certain physical properties of single crystal of tungsten,antimony, bismuth, tellurium, cadmium, zinc and tin”, Proc. Amer. Acad. Arts and Sci.60, 305 (1925).[81] D. C. Stockbarger, “The production of large single crystals of lithiumfluoride”, Rev.
of Sc. Instr. 7, 133 (1936).[82] O. Madelung, U. Rossler, M. Schulz (Eds.,) Semiconductors NonTetrahedrally Bonded Elements and Binary Compounds I (Landolt-Bornstein - Group117III Condensed Matter., vol. 41C 1998).[83] E. L. Hahn, “Spin Echoes”, Phys. Rev. 80, 580 (1950).[84] H. Y. Carr, E. M. Purcell, “Effects of Diffusion on Free Precession inNuclear Magnetic Resonance Experiments”, Phys. Rev.
94, 630 (1954).[85] D. Massiot, I. Farnan, N. Gautier, D. Trumeau, A. Trokiner, J. P. Coutures,“71Ga and 69Ga nuclear magnetic resonance study of beta-Ga2O3: resolution of four- andsix-fold coordinated Ga sites in static conditions”, Solid State Nucl. Magn.Reson. 4, 241 (1995).[86] R. K. Harris, E. D. Becker, S. M.
C. De Menezes, R. Goodfellow,P. Granger, “NMR nomenclature: nuclear spin properties and conventions for chemicalshifts — IUPAC recommendations 2001”, Pure Appl. Chem. 73, 1795 (2001).[87] G. G. McDonald, J. S. Leigh, “A new method for measuring longitudinalrelaxation times”, J. Magn. Reson. 9, 358 (1973).[88] R. L. Vold, J. S. Waugh, M. P. Klein, D. E. Phelps, “Measurement of spinrelaxation in complex systems”, J. Chem. Phys. 48, 3831 (1968).[89] В. М.
Микушев, Е. В. Чарная, Ядерныи магнитныи резонанс в твердомтеле (СПб, 1995).[90] J. Korringa, “Nuclear magnetic relaxation and resonance line shift inmetals”, Physica 16, 601 (1950).[91] M. Mehring, Principles of High Resolution NMR in Solids (Springer Verlag,Berlin 1983).[ 9 2 ] J. Y. Leloup, B. Sapoval, G. Martinez, “Knight Shift in MultivalleySemiconductors. II.
Determination of the Hyperfine Coupling Constants in N-and PType PbSe and PbTe”, Phys. Rev. B 7, 5276 (1973).[93] H. Selbach, O. Kanert, D. Wolf, “NMR investigation of the diffusion andconduction properties of the semiconductor tellurium. I. Electronic properties”, Phys.Rev. B 19, 4435 (1979).118[94] J. P. Yesinowski, “Solid-state NMR of inorganic semiconductors”, Top.Curr.
Chem. 306, 229 (2011).[95] S. Boutin, J. Ramírez-Ruiz, I. Garate, “Tight-binding theory of NMR shiftsin topological insulators Bi2Se3 and Bi2Te3”, Phys. Rev. B 94, 115204 (2016).[96] B. Yu. Yavorsky, N. F. Hinsche, I. Mertig, P. Zahn, “Electronic structureand transport anisotropy of Bi2Te3 and Sb2Te”, Phys. Rev. B 84, 165208 (2011).[97] Z. Wang, Z.-G. Fu, S.-X. Wang, P. Zhang, “Topological insulators for highperformance terahertz to infrared applications”, Phys. Rev. B 82, 085429 (2010).[98] M. M. Vazifeh, M. Franz, “Spin response of electrons on the surface of atopological insulator”, Phys.
Rev. B 86, 045451 (2012).[99] E. M. Levin, B. A. Cook, K. Ahn, M. G. Kanatzidis, K. Schmidt-Rohr,“Electronic inhomogeneity and Ag:Sb imbalance of Ag 1−yPb18Sb1+zTe20 highperformance thermoelectrics elucidated by 125Te and 207Pb NMR”, Phys. Rev. B 80,115211 (2009).[100] P.
C. Canfield, Z. Fisk, “Growth of single crystals from metallic fluxes”,Philos. Mag. B 65, 1117 (1992).[101] P. C. Canfield, T. Kong, U. S. Kaluarachchi, N. H. Jo, “Use of frit-disccrucible for routine and exploratory solution growth of single crystalline samples”,Philos. Mag. 96, 84 (2016).[102] D. X. Qu, Y.
S. Hor, J. Xiong, R. J. Cava, N. P. Ong, “Quantum oscillationsand hall anomaly of surface states in the topological insulator Bi2Te3”, Sci. 329, 821(2010).[103] J. G. Analytis, R. D. McDonald, S. C. Riggs, J.-H. Chu, G. S. Boebinger,I. R. Fisher, “Two-dimensional surface state in the quantum limit of a topologicalinsulator”, Nat. Phys.
6, 960 (2010).[104] K. Eto, Z. Ren, A. A. Taskin, K. Segawa, Y. Ando, “Angular-dependentoscillations of the magnetoresistance in Bi2Se3 due to the three-dimensional bulk Fermisurface”, Phys. Rev. B 81, 195309 (2010).119[105] N. P. Butch, K. Kirshenbaum, P. Syers, A. B. Sushkov, G. S. Jenkins,H. D. Drew, J. Paglione, “Strong surface scattering in ultrahigh-mobility Bi2Se3topological insulator crystals”, Phys. Rev.
B 81, 241301(R) (2010)..
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