Диссертация (1104202), страница 20
Текст из файла (страница 20)
556–560, 1996.[17]Y. A. Pashkin, Y. Nakamura, and J. Tsai, “Room-temperature al singleelectron transistor made by electron-beam lithography”, Applied PhysicsLetters, vol. 76, no. 16, p. 2256–2258, 2000.[18]Я. Герасимов, “Теоретическое исследование электронного транспорта вмолекулярном одноэлектронном транзисторе”, дис. . . . док., НИЦ "Курчатовский институт", 2014.[19]A. Aviram and M.
A. Ratner, “Molecular rectifiers”, Chemical PhysicsLetters, vol. 29, no. 2, p. 277–283, 1974.[20]H. Nejoh, “Incremental charging of a molecule at room temperature usingthe scanning tunnelling microscope”, Nature, vol. 353, no. 6345, p. 640–642, 1991.[21]C. Schönenberger, H. Van Houten, and H. Donkersloot, “Single-electrontunnelling observed at room temperature by scanning-tunnelling microscopy”, EPL (Europhysics Letters), vol. 20, no. 3, p.
249, 1992.[22]L. A. Oro, P. Braunstein и P. R. Raithby, Metal clusters in chemistry. Wileyvch Weinheim, Germany, 1999, т. 3.107[23]X. Xiao, B. Xu, and N. Tao, “Conductance titration of single-peptidemolecules”, Journal of the American Chemical Society, vol. 126, no. 17,p. 5370–5371, 2004.[24]R. Yamada, H. Kumazawa, T. Noutoshi, et al., “Electrical conductance ofoligothiophene molecular wires”, Nano letters, vol. 8, no. 4, p.
1237–1240,2008.[25]R. Yamada, H. Kumazawa, S. Tanaka, and H. Tada, “Electrical resistanceof long oligothiophene molecules”, Applied physics express, vol. 2, no. 2,p. 025 002, 2009.[26]J. Ulrich, D. Esrail, W. Pontius, et al., “Variability of conductance inmolecular junctions”, The Journal of Physical Chemistry B, vol. 110, no.
6,p. 2462–2466, 2006.[27]T. Nakamura, T. Miyamae, D. Yoshimura, et al., “Alkyl chain conformation and the electronic structure of octyl heavy chalcogenolate monolayersadsorbed on au (111)”, Langmuir, vol. 21, no. 11, p. 5026–5033, 2005.[28]M. Tsutsui and M. Taniguchi, “Single molecule electronics and devices”,Sensors, vol. 12, no. 6, p. 7259–7298, 2012.[29]T. Hines, I. Diez-Perez, J. Hihath, et al., “Transition from tunneling tohopping in single molecular junctions by measuring length and temperaturedependence”, Journal of the American Chemical Society, vol.
132, no. 33,p. 11 658–11 664, 2010.[30]K. Yokota, M. Taniguchi, H. Tanaka, and T. Kawai, “Metallic natureof metal-molecule interface formed by au-se bonds”, Physical Review B,vol. 77, no. 16, p. 165 416, 2008.[31]M. Dell’Angela, G. Kladnik, A. Cossaro, et al., “Relating energy levelalignment and amine-linked single molecule junction conductance”, Nanoletters, vol. 10, no. 7, p. 2470–2474, 2010.[32]M. Kiguchi, S. Miura, K. Hara, et al., “Conductance of a single moleculeanchored by an isocyanide substituent to gold electrodes”, Applied physicsletters, vol.
89, no. 21, p. 213 104, 2006.[33]J. Van Ruitenbeek, A. Alvarez, I. Pineyro, et al., “Adjustable nanofabricated atomic size contacts”, Review of Scientific Instruments, vol. 67, no. 1,p. 108–111, 1996.108[34]C. Muller, J. Van Ruitenbeek, and L. De Jongh, “Experimental observation of the transition from weak link to tunnel junction”, Physica C:Superconductivity, vol. 191, no.
3-4, p. 485–504, 1992.[35]J. Moreland and J. Ekin, “Electron tunneling experiments using nb-sn“break”junctions”, Journal of applied physics, vol. 58, no. 10, p. 3888–3895, 1985.[36]M. A. Reed, C. Zhou, C. Muller, et al., “Conductance of a molecularjunction”, Science, vol. 278, no. 5336, p. 252–254, 1997.[37]S. J. van der Molen and P. Liljeroth, “Charge transport through molecular switches”, Journal of Physics: Condensed Matter, vol. 22, no. 13,p.
133 001, 2010.[38]C. R. Arroyo, S. Tarkuc, R. Frisenda, et al., “Signatures of quantum interference effects on charge transport through a single benzene ring”, Angewandte Chemie International Edition, vol. 52, no. 11, p. 3152–3155, 2013.[39]Y. Dubi and M. Di Ventra, “Colloquium: Heat flow and thermoelectricityin atomic and molecular junctions”, Reviews of Modern Physics, vol. 83,no. 1, p. 131, 2011.[40]J. K. Yang, B.
Cord, H. Duan, et al., “Understanding of hydrogensilsesquioxane electron resist for sub-5-nm-half-pitch lithography”, 2009.[41]K. Liu, P. Avouris, J. Bucchignano и др., “Simple fabrication scheme forsub-10 nm electrode gaps using electron-beam lithography”, Applied PhysicsLetters, т. 80, № 5, с. 865—867, 2002.[42]Y.-K. Choi, T.-J. King, and C. Hu, “A spacer patterning technology fornanoscale cmos”, IEEE Transactions on Electron Devices, vol.
49, no. 3,p. 436–441, 2002.[43]G. Dolan, “Offset masks for lift-off photoprocessing”, Applied Physics Letters, vol. 31, no. 5, p. 337–339, 1977.[44]L. Sun, S. Chin, E. Marx и др., “Shadow-evaporated nanometre-sized gapsand their use in electrical studies of nanocrystals”, Nanotechnology, т. 16,№ 6, с. 631, 2005.109[45]S. Kubatkin, A. Danilov, M. Hjort и др., “Single-electron transistor of asingle organic molecule with access to several redox states”, Nature, т. 425,№ 6959, с. 698—701, 2003.[46]A.
A. Tseng, “Recent developments in micromilling using focused ion beamtechnology”, Journal of Micromechanics and Microengineering, т. 14, № 4,R15, 2004.[47]S. Boden, Z. Moktadir, D. Bagnall и др., “Focused helium ion beam millingand deposition”, Microelectronic Engineering, т. 88, № 8, с.
2452—2455, 2011.[48]M. Principe, M. Consales, A. MIcco и др., “Optical fiber meta-tips”, вAsia-Pacific Optical Sensors Conference, Optical Society of America, 2016,Th4A—58.[49]O. Scholder, K. Jefimovs, I. Shorubalko и др., “Helium focused ion beamfabricated plasmonic antennas with sub-5 nm gaps”, Nanotechnology, т. 24,№ 39, с. 395 301, 2013.[50]V. Ray, R. Subramanian, P. Bhadrachalam и др., “CMOS-compatiblefabricationofroom-temperaturesingle-electrondevices”,Naturenanotechnology, т. 3, № 10, с. 603—608, 2008.[51]S. Boussaad и N.
Tao, “Atom-size gaps and contacts between electrodesfabricated with a self-terminated electrochemical method”, Applied physicsletters, т. 80, № 13, с. 2398—2400, 2002.[52]A. Umeno и K. Hirakawa, “Fabrication of atomic-scale gold junctions byelectrochemical plating using a common medical liquid”, Applied PhysicsLetters, т.
86, № 14, с. 143 103, 2005.[53]Y. Yasutake, K. Kono, M. Kanehara и др., “Simultaneous fabrication ofnanogap gold electrodes by electroless gold plating using a common medicalliquid”, Applied Physics Letters, т. 91, № 20, с. 203 107, 2007.[54]J. Xiang, B. Liu, S.-T. Wu и др., “A Controllable Electrochemical Fabricationof Metallic Electrodes with a Nanometer/Angstrom-Sized Gap Using anElectric Double Layer as Feedback”, Angewandte Chemie InternationalEdition, т.
44, № 8, с. 1265—1268, 2005.[55]N. Okabayashi, K. Maeda, T. Muraki и др., “Uniform charging energy ofsingle-electron transistors by using size-controlled Au nanoparticles”, AppliedPhysics Letters, т. 100, № 3, с. 033 101, 2012.110[56]P. Steinmann и J. Weaver, “Fabrication of sub-5 nm gaps between metallicelectrodes using conventional lithographic techniques”, Journal of VacuumScience & Technology B: Microelectronics and Nanometer StructuresProcessing, Measurement, and Phenomena, т.
22, № 6, с. 3178—3181,2004.[57]I. Sapkov и E. Soldatov, “Narrowing of nanogap for purpose of molecularsingle-electronics”,вInternational Conference on Micro-and NanoElectronics 2012, International Society for Optics и Photonics, 2013,87000O—87000O.[58]F. M. d’Heurle, “Electromigration and failure in electronics: An introduction”,Proceedings of the IEEE, т.
59, № 10, с. 1409—1418, 1971.[59]I. A. Blech и H. Sello, “The failure of thin alluminum current-carrying stripson oxidized silicon”, в Physics of Failure in Electronics, 1966. Fifth AnnualSymposium on the, IEEE, 1966, с. 496—505.[60]H. Park, A. K.
Lim, A. P. Alivisatos и др., “Fabrication of metallic electrodeswith nanometer separation by electromigration”, Applied Physics Letters,т. 75, № 2, с. 301—303, 1999.[61]H. Heersche, Z. De Groot, J. Folk и др., “Electron transport through singleMn 12 molecular magnets”, Physical review letters, т. 96, № 20, с. 206 801,2006.[62]N. Roch, S. Florens, V. Bouchiat и др., “Quantum phase transition in asingle-molecule quantum dot”, Nature, т. 453, № 7195, с. 633—637, 2008.[63]A. S. Zyazin, J. W.















