US8558330 (1060168), страница 5
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The MEMs pressure sensor of claim 11, the gradientprocessing, comprising:forming a deep Well Within a ?rst side of a semiconductordepth, Wherein the deep Well has a second doping typehaving a gradient doping pro?le; andappreciated that features, layers and/or elements depicted65one or more shalloW Wells enable the deep Well to operate as a pieZoresistor that is con?gured to change itsresistance as a function of pressure Within the cavity.14. The MEMs pressure sensor of claim 11, Wherein theMEMs pressure sensor comprises a monolithic MEMs pressure sensor having CMOS components Within a ?rst region ofn-type material and Within an adjacent second region ofp-type material.US 8,558,330 B2111217.
The MEMs pressure sensor of claim 16, Wherein the15. The MEMs pressure sensor of claim 11, Wherein the?rst doping type comprises a p-doping to result in a p-typesemiconductor substrate and Wherein the second doping typecomprises an n-type doping to result in a deep n-Well.16. A MEMs pressure sensor, comprising:a p-type non-epitaxial silicon substrate;one or more p-type shalloW Wells have a doping concentrationhigher than that of the n-type deep Well.18.
The MEMs pressure sensor of claim 16, Wherein thegradient doping pro?le comprises a dopant concentration thatis inversely proportional to the distance from the top surfaceof the p-type non-epitaxial silicon substrate.a diaphragm located Within a ?rst side of the p-type nonepitaxial silicon substrate;an n-type deep Well having a gradient doping pro?le andlocated Within the diaphragm;one or more p-type shalloW Wells located Within the n-typedeep Well that operates as pieZoelectric resistors; anda cavity located Within a second side of the p-type nonepitaxial silicon substrate and abutting the diaphragm;Wherein a pressure Within the cavity is con?gured to generate a force that acts upon the diaphragm to change thepieZoelectric resistors’ resistance as a function of pressure difference applied on the diaphragm.1019.
The MEMs pressure sensor of claim 16, Wherein theMEMs pressure sensor comprises a monolithic MEMs pressure sensor having CMOS components Within a ?rst region ofn-type material and Within an adjacent second region ofp-type material.20. The MEMs pressure sensor of claim 16, Wherein thecavity is formed to have steep sideWall angle that stops at a PNjunction formed betWeen the p-type non-epitaxial silicon substrate and the n-type deep Well.*****.
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