Принципы нанометрологии (1027506), страница 47
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A typical SEM meets allof these requirements, but other particles can be used as well. Recently,a focused ion beam (FIB) [63] has become more and more popular. Theconcept of FIB is similar to that of SEM; however, the electrons arereplaced by ions of much larger masses. As a consequence they can in205206C H A P T ER 7 : Scanning probe and particle beam microscopyFIGURE 7.9 TEM image of 150-nm-diameter latex particles. This image highlights thedrawback to TEM size measurement using TEM or SEM.
The first is that a white ‘halo’surrounds the particle. Should the halo area be included in the size measurement? If sothere will be a difficulty in determining the threshold level. The second is the particles areaggregated, again making sizing difficult.general induce damage to a specimen by sputtering. However, for eachincoming ion two to eight secondary electrons are generated. Thisabundance of secondary electrons allows for very-high-contrast imaging.In addition to secondary electrons, backscattered ions are also availablefor imaging. These ions are not as abundant as secondary electrons, butdo provide unique contrast mechanisms that allow quantitativediscrimination between materials with sub-micrometre spatial resolution.An electron beam has a relatively large excitation volume in the substrate.This limits the resolution of an SEM regardless of the probe size.
A heliumion beam does not suffer from this effect, as the excitation volume is muchsmaller than that of the SEM. SEMs are typically run at or near theirsecondary electron unity crossover point to minimize charging of the sample.This implies that for each incoming electron, one secondary electron is madeavailable for imaging. The situation with the helium ion beam is much morefavourable.The helium ion microscope [64] has several unique properties that, whencombined, allow for higher-resolution imaging than that available today withconventional SEMs. In addition to better resolution, the helium ion microscope and the FIB also provide unique contrast mechanisms in bothsecondary electron mode and backscattered modes that enable materialdiscrimination and identification.References7.7 References[1] Binnig G, Rohrer H, Gerber Ch, Weibel E 1982 Surface studies by scanningtunneling microscopy Phys.
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