Диссертация (1097807), страница 53
Текст из файла (страница 53)
11-22.260 Зимин, С.П. Классификация электрических свойств пористого кремния // ФТП. –2000. – Т. 34. – Вып. 3. – С. 359-362.261 Zhu, D., Chen, Q., Zhang, Y. Transport properties in iron-passivated porous silicon //Appl. Surf. Sci. – 2002. – V. 191. – P. 218-222.262 Diligenti, A., Nannini, A., Pennelli, G., Pieri, F.
Current transport in free-standingporous silicon // Appl. Phys. Lett. – 1996. – V. 68. - №5. – P. 687-689.263 Лаптев, А.Н. , Проказников, А.В. , Рудь, Н.А. Гистерезис вольт-амперныххарактеристик светоизлучающих структур на пористом кремнии // Письма вЖТФ. -1997. – Т. 23. – С. 59-66.264 Балагуров, Л.А. Пористый кремний: получение, свойства, возможные применения// Материаловедение. -1998. Вып. 1. – С. 50–56; Вып.
3. – С. 23–45.265 Remaki, B., Populaire, C., Lysenko, V., Barbier, D. Electrical barrier properties ofmeso-porous silicon // Mat. Sci. Eng. – 2003. - V. 101. – P. 313-317.266 Ben-Chorin, M., Möller, F., Koch, F. Nonlinear electrical transport in porous silicon //Phys. Rev. B. – 1994. – V. 49. - №4. – P. 2981-2984.267 Frenkel, J. On pre-breakdown phenomena in insulators and electronic semi-conductors// Phys. Rev. – 1938. – V.
54. – P. 647-648.268 Lee, W.H., Lee, C., Jang, J. Quantum size effects on the conductivity in porous silicon// Non.-Cryst. Sol. – 1996. – V. 198-200. – P. 911-914.298269 Beale, M.I.J., Benjamin, J.D., Uren, M.J., Chew, N.G., Cullis, A.G. An experimentaland theoretical study of the formation and microstructure of porous silicon // J. Cryst.Growth. – 1985. – V. 73. – P. 622-636.270 Anderson, R.C., Muller, R.S., Tobias, C.W.
Investigation of the electrical properties ofporous silicon // J. Electrochem. Soc. – 1991. – V. 138. – P. 3406-3411.271 Raminder, G. M., Vivechana, Mehra, R.M., Mathur, P.C., Jain, V.K. Electron transportin porous silicon // Thin Solid Films. – 1998. – V. 312. – P. 254-258.272 Ben-Chorin, M. Möller, F., Koch, F., Schirmacher, W., Elerhard, M. Hopping transporton a fractal: ac conductivity of porous silicon // Phys. Rev. B. – 1995. – V.
51. - №4. –P. 2199-2213.273 Lampin, E., Delerue, C., Lannoo, M., Allan, G. Frequency-dependent hoppingconductivity between silicon nanocrystallites: Application to porous silicon // Phys.Rev. B – 1998. – V. 58. - №18. – P. 12044-12048.274 Lubianiker, Y., Balberg, I. Two Meyer-Neldel rules in porous silicon // Phys. Rev.
Lett.– 1997. – V. 78. - №12. – P. 2433-2436.275 Künzner, N., Kovalev, D., Diener, J., Gross, E., Timoshenko, V.Yu., Polisski, G., Koch,F. Giant birefringence in anisotropically nanostructured silicon // Opt. Lett. – 2001. - V.26. - №16. – P. 1265-1267.276 Künzner, N., Diener, J., Gross, E., Kovalev, D., Timoshenko, V.Yu., Fujii, M. Formbirefringence of anisotropically nanostructured silicon // Phys. Rev. B. – 2005.
– V. 71. –P. 195304-1-8.277 Stroud, D. Generalized effective-medium approach to the conductivity of aninhomogeneous material // Phys. Rev. B. – 1975. – V. 12. – P. 3368-3373.278 Uhlir, A. Electropolishing of silicon // Bell Syst. Tech. J. – 1956. - V. 35. - P. 333–338.279 Turner, D. Electropolishing silicon in hydrofluoric acid solutions // J. Electochem. Soc.– 1958. - V. 5. – P. 402–405.280 Canham, L.T. Silicon quantum wire array fabrication by electrochemical and chemicaldissolution of wafers // Appl.
Phys. Lett. – 1990. – V.57. - №10. – P. 1046-1048.281 Лабунов, В.А., Бондаренко, В.П., Борисенко, В.Е. Получение, свойства иприменение пористого кремния // Зарубежная электронная техника. – 1978 .- №15.– C.3-27.282 Koshida, N., Коуoda, М. Visible electroluminescence from porous silicon // Appl.299Phys. Lett. – 1992. – V.60.
- № 3. – P. 347-349.283 Theis, W. Optical properties of porous silicon // Surf. Science Rep. – 1997. – V. 29. – P.191-192.284 Pickering, C., Beale, M.I.J., Robbins, D.J., Pearson, P.J., Greet, R. Optical studies of thestructure of porous silicon films formed in p-type degenerate and non-degeneratesilicon// J. Phys.
C: Sol. St. Phys. – 1984. – V. 17. - №10. – P. 6535-6552.285 Beale, M.I.J., Chew, N.G., Uren, M.J., Cullis, A.G., Benjamin, J.D. Microstructure andFormation Mechanism of Porous Silicon // Appl. Phys. Lett. – 1985. – V.46. - №l. – P.86-88.286 Lehmann, V., Gosele, U.
Porous Silicon Formation: A quantum Wire Effect // Appl.Phys. Lett. – 1991. – V.58. - № 8. – P. 856-858.287 Smith, R.L., Collins, S.D. Porous silicon formation mechanisms // J. Appl. Phys. –1992. – V. 71. - №8. – P. R1-R22.288 Jung, K.H., Shin, S., Kwon, D.L. Developments in luminescent porous Si // J.Electrochem. Soc. – 1993. – V.140. - №10. – P .3016-3064.289 Herino, R., Bomchil, G., Baria, K., Bertrand, C., Ginoux, J.
L. Porosity and pore sizedistribution of porous silicon layers // J. Electrochem. Soc. – 1987. – V. 134. – P. 19942000.290 Свечников, С.В., Савченко, А.В., Сукач, Г.А., Евстигнеев, А.М., Каганович, Э.Б.Светоизлучающие слои пористого: получение, свойства и применение // Оптоэл.и п/п техника. – 1994. –Т. 27. – С. 3-29.291 Rouquerol, J., Avnir, D., Fairbridge, C.W., Everett, D.H., Haynes, J.H., Pernicone, N.,Ramsay, J.D.F., Sing, K.S.W., Unger, K.K. Recommendations for the characterizationof porous solids // Pure Appl.
Chem. - 1994. – V. 66. – P. 1739-1758.292 Gullis, A.G., Canham, L.Т., Calcott, P.D.J. The structural and luminescence propertiesof porous silicon // Appl. Phys. Lett. – 1997. – V. 82. – P. 909-965.293 Canham, L.Т., Cullis, A.G., Pickering, C., Dosser, O.D., Cox, D.I., Lynch, T.P.Luminescent anodized silicon aerocrystal networks prepared by supercritical drying//Nature.
– 1994. – V. 368. – P. 133-134.294 Gullis, A.G., Canham, L.Т. Visible light emission due to quantum size effects in highlyporous crystalline silicon // Nature. – 1991. – V. 353. – P. 335-337.300295 Seto, J.Y.W. The electrical properties of polycrystalline silicon films // J. Appl. Phys. –1975. – V. 46. – P. 5247-5254.296 Ландау, Л.Д., Лифшиц, Е.М. Электродинамика сплошных сред // М.: Наука, 1982.297 Shi, H., Zheng, Y., Wang, Y., Yuan, R. Electrically induced light emission and novelphotocurrent response of a porous silicon device // Appl. Phys. Lett.- 1993.
– V.63. №6 – P. 770-772.298 Kaifeng, L., Yumin, W., Lei, Zh. Shenyi W. Xiangfu Z. Photoconductivitycharacteristics of porous silicon // Chin. Phys. Lett. – 1994. – V. 11. - №5. – P. 289292.299 Каганович, Э.Б., Манойлов, Э.Г., Свечников, С.В. Фоточувствительные структурына пористом кремнии // ФТП.
– 1999. – Т. 33. – Вып. 3. – С. 327-331.300 Canham, L.T., Groszek, A.J. Characterization of microporous Si by flow calorimetry:Comparison with a hydrophobic SiO2 molecular sieve // J. Appl. Phys. – 1992. – V. 72.– P. 1558-1565.301 Накамото, К. Инфракрасные спектры неорганических и координационныхсоединений // М.: Мир, Пер.
с англ., 1966. – C. 536.302 Bai, G.R.,. Qi, M.W, Xie, L.M., Shi, T.S. The isotope study of the Si---H absorptionpeaks in the FZ---Si grown in hydrogen atmosphere // Sol. Stat. Comm. – 1985. – V. 56.- №3. – P. 277-281.303 Borghei, A., Sassella, A., Pivac, B., Pavesi, L. Characterization of porous siliconinhomogeneties by high spatial resolution infrared spectroscopy // Sol. St. Comm. –1993.
– V. 87. - №1. – P. 1-4.304 Литтл, Л. Инфракрасные спектры адсорбированных молекул // М.: Мир, Пер. сангл., 1969. – C. 514.305 Xie, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, Macaulay, J.M., Harris,T.D. Luminescence and structural study of porous silicon films // J. Appl. Phys. – 1992.– V. 71. - №5. – P. 2403-2407.306 Tsai, C., Li, K.H., Campbell, J.C., Hance, B.V., White, J.M. Laser-induced degradationof the photoluminescence intensity of porous silicon // J. Electr.
Mater. – 1992. – V. 21.- №10. – P. 589-591.307 Anderson, R.C., Muller, R.S., Tobias, C.W. Chemical surface modification of poroussilicon // J. Electrochem. Soc. – 1993. – V. 140. - №5. – P. 1393-1396.301308 Bisi, O., Ossicini, S., Pavesi, L. Porous silicon: a quantum stronge structure for siliconbased optoelectronics // Surface Science Report. – 2000.
– V. 38. – P. 1-126.309 Salonen, J., Lehto, V-P., Laine, E. Thermal oxidation of free-standing porous siliconfilms // Appl Phys. Lett. – 1997. – V. 70. – P. 637.310 Yon, J.J., Barla, K., Herino, R., Bomchil, G. The kinetics and mechanism of oxide layerformation from porous silicon formed on p-Si substrates // J. Appl. Phys. – 1987. - V.62. - №3. – P. 1042-1048.311 Mawhinney, D.B., Glass, J.A., Yates, J.T. FTIR study of the oxidation of porous silicon// J. Phys. Chem. B. – 1997. - V. 101. - №7. – P. 1202-1206.312 Robinson, M.B., Dillon, A.C., Haynes, D.R., George, S.M. Effect of thermal annealingand surface coverage on porous silicon photoluminescence // Appl. Phys.