Диссертация (1091440), страница 20
Текст из файла (страница 20)
Vol. 80, № 4. P. 625–627.61.Zhuravlev M.Y., Sabirianov R.F., Jaswal S.S., Tsymbal E.Y. GiantElectroresistance in Ferroelectric Tunnel Junctions // Phys. Rev. Lett. 2005.Vol. 94, № 24. P. 246802.62.Zhao T., Scholl A., Zavaliche F., Lee K., Barry M., Doran A., Cruz M.P., ChuY.H., Ederer C., Spaldin N.A., Das R.R., Kim D.M., Baek S.H., Eom C.B.,Ramesh R. Electrical control of antiferromagnetic domains in multiferroicBiFeO3 films at room temperature // Nat. Mater.
2006. Vol. 5, № 10. P. 823–829.63.Eerenstein W., Wiora M., Prieto J.L., Scott J.F., Mathur N.D. Giant sharp andpersistent converse magnetoelectric effects in multiferroic epitaxialheterostructures // Nat. Mater. 2007. Vol. 6, № 5. P. 348–351.64.Hur N., Park S., Sharma P.A., Ahn J.S., Guha S., Cheong S.-W. Electricpolarization reversal and memory in a multiferroic material induced bymagnetic fields // Nature.
2004. Vol. 429, № 6990. P. 392–395.65.Lin Y.-H., Faber H., Labram J.G., Stratakis E., Sygellou L., Kymakis E.,Hastas N.A., Li R., Zhao K., Amassian A., Treat N.D., McLachlan M.,Anthopoulos T.D. High Electron Mobility Thin-Film Transistors Based on148Solution-Processed Semiconducting Metal Oxide Heterojunctions and QuasiSuperlattices // Adv.
Sci. 2015. Vol. 2, № 7. P. 1500058.66.Jepsen P.U., Cooke D.G., Koch M. Terahertz spectroscopy and imaging Modern techniques and applications // Laser Photon. Rev. 2011. Vol. 5, № 1.P. 124–166.67.Pereira M.F. TERA-MIR radiation: materials, generation, detection andapplications // Opt. Quantum Electron. 2014. Vol. 46, № 4. P. 491–493.68.Wharmby A.W. A fractional calculus model of anomalous dispersion ofacoustic waves // J. Acoust. Soc.
Am. 2016. Vol. 140, № 3. P. 2185–2191.69.Cunningham P.D., Valdes N.N., Vallejo F.A., Hayden L.M., Polishak B., ZhouX.-H., Luo J., Jen A.K.-Y., Williams J.C., Twieg R.J. Broadband terahertzcharacterization of the refractive index and absorption of some importantpolymeric and organic electro-optic materials // J. Appl. Phys. 2011. Vol. 109,№ 4. P. 43505-043505–5.70.Parrott E.P.J., Zeitler J.A. Terahertz Time-Domain and Low-FrequencyRaman Spectroscopy of Organic Materials // Appl. Spectrosc.
2015. Vol. 69,№ 1. P. 1–25.71.Niessen K.A., Snell E., Markelz A.G. Measurements and calculations ofprotein intramolecular vibrations in the THz range // 39th Int. Conf. Infrared,Millimeter, Terahertz waves. 2014. Vol. 9. P. 1–2.72.Carlo Corsi F.S. THz and Security Applications // Sizov. 2014. p.292/31773.Bui T.S., Dao T.D., Dang L.H., Vu L.D., Ohi A., Nabatame T., Lee Y., NagaoT., Hoang C.
V. Metamaterial-enhanced vibrational absorption spectroscopyfor the detection of protein molecules // Sci. Rep. 2016. Vol. 6, № 1. P. 32123.74.Shiraga K., Ogawa Y., Suzuki T., Kondo N., Irisawa A., Imamura M.Characterization of Dielectric Responses of Human Cancer Cells in theTerahertz Region // J. Infrared, Millimeter, Terahertz Waves.
2014. Vol. 35,№ 5. P. 493–502.75.Siegel P.H. Terahertz technology in biology and medicine // 2004 IEEE MTTS International Microwave Symposium Digest (IEEE Cat. No.04CH37535).149P. 1575–1578.76.Graf U.U., Honingh C.E., Jacobs K., Stutzki J. Terahertz Heterodyne ArrayReceivers for Astronomy // J. Infrared, Millimeter, Terahertz Waves. 2015.Vol. 36, № 10. P. 896–921.77.Kürner T., Priebe S. Towards THz Communications - Status in Research,Standardization and Regulation // J. Infrared, Millimeter, Terahertz Waves.2014. Vol. 35, № 1. P.
53–62.78.Seeds A.J., Renaud C.C., Shams H., Fice M.J. TeraHertz Photonics forWireless Communications // J. Light. Technol. Vol. 33, Issue 3, pp. 579-587.2015. Vol. 33, № 3. P. 579–587.79.Venkatesh M., Rao K.S., Abhilash T.S., Tewari S.P., Chaudhary A.K.
Opticalcharacterization of GaAs photoconductive antennas for efficient generationand detection of Terahertz radiation // Opt. Mater. (Amst). 2014. Vol. 36, № 3.P. 596–601.80.Г.Б. Галиев, Е.А. Климов, Д.В. Лаврухин А.Э.Я., Р.Р. Галиев, Д.С.Пономарев, Р.А. Хабибуллин, В.Ф. Доров. Разработка и иссëеäованиефотопровоäящих антенн на основе поëупровоäников ãруппы А3В5,выращенных при пониженных температурах эпитаксиального роста. //Нано- и микросистемная техника. 2014. Vol. 6. P. 28.81.Liliental-Weber Z., Swider W., Yu K.M., Kortright J., Smith F.W., CalawaA.R. Breakdown of crystallinity in low-temperature-grown GaAs layers //Appl.
Phys. Lett. 1991. Vol. 58, № 19. P. 2153–2155.82.Lochtefeld a. J., Melloch M.R., Chang J.C.P., Harmon E.S. The role of pointdefects and arsenic precipitates in carrier trapping and recombination in lowtemperature grown GaAs // Appl. Phys. Lett. 1996. Vol. 69, № 10. P. 1465.83.Missous M. Stoichiometric low temperature (SLT) GaAs and AlGaAs grownby molecular beam epitaxy // Microelectronics J. 1996. Vol. 27, № 4–5. P.393–409.84.Grandidier B., Chen H., Feenstra R.M., McInturff D.T., Juodawlkis P.W.,Ralph S.E. Scanning tunneling microscopy and spectroscopy of arsenic150antisites in low temperature grown InGaAs // Appl. Phys.
Lett. 1999. Vol. 74,№ 1999. P. 1439.85.Schoenherr D., Hartnagel H.L., Hargreaves S., Lewis R.A., Henini M. Timedomain THz spectroscopy using acceptor-doped GaAs photoconductiveemitters // Semicond. Sci. Technol. 2008. Vol. 23, № 10. P. 105012.86.Hargreaves S., Lewis R.A. THz emission from Be-doped GaAs // 2007 Joint32nd International Conference on Infrared and Millimeter Waves and the 15thInternational Conference on Terahertz Electronics. 2007.
P. 202–203.87.Galiev G., Kaminskii V., Milovzorov D., Velihovskii L., Mokerov V.Molecular beam epitaxy growth of a planar p n junction on a (111)A GaAssubstrate, using the amphoteric property of silicon dopant // Semicond. Sci.Technol. 2002. Vol. 17, № 2. P.
120–123.88.Schubert E.F., Fischer A., Ploog K. The delta-doped field-effect transistor(δFET) // IEEE Trans. Electron Devices. 1986. Vol. 33, № 5. P. 625–632.89.Nakazato K., Blaikie R.J., Ahmed H. Single‐electron memory // J. Appl. Phys.1994. Vol. 75, № 10. P. 5123–5134.90.Frizzarini M., da Silva E.C.F., Quivy A.A., Cavalheiro A., Leite J.R., MenesesE.A. Effects of thermally activated hole escape mechanism on the optical andelectrical properties inp-type Si δ-doped GaAs( 311 )A layers // Phys. Rev. B.2000. Vol.
61, № 20. P. 13923–13928.91.M. Levin , L. Lu Tie-Cheng , I. Shlimak , V. Ginodman , L. Resnick , V.Sandomirskii , K.-J. Friedland R.H. Low-temperature resistance saturation inSi-doped GaAs structure with -like gate electrode // Phys. E. 2002. Vol. 12. P.634.92.Johnston M.B. Introduction to the Special Issue on “PhotoconductiveEmission and Detection of Terahertz Radiation” // J. Infrared, Millimeter,Terahertz Waves. 2012. Vol. 33, № 4.
P. 391–392.93.Apostolopoulos V., Barnes M.E. THz emitters based on the photo-Dembereffect // J. Phys. D. Appl. Phys. 2014. Vol. 47, № 37. P. 374002.94.Pozina G., Holtz P.O., Sernelius B., Buyanov A. V., Radamson H.H., Madsen151L.D., Monemar B., Thordson J., Andersson T.G.
Characteristics of Si d-LayersEmbedded in GaAs // Phys. Scr. 1999. Vol. T79, № 1. P. 99.95.Adomi K., Strite S., Morkoç H., Nakamura Y., Otsuka N. Characterization ofGaAs grown on Si epitaxial layers on GaAs substrates // J. Appl. Phys. 1991.Vol. 69, № 1. P. 220–225.96.Yildiz A., Lisesivdin S.B., Altuntas H., Kasap M., Ozcelik S. Electricalconduction properties of Si δ-doped GaAs grown by MBE // Phys. B Condens.Matter. 2009. Vol.
404, № 21. P. 4202–4206.97.Kamo Y., Kitazawa S., Ohshima S., Hosoda Y. Highly efficientphotoconductive antennas using optimum low-temperature-grown GaAslayers and Si substrates // Jpn. J. Appl. Phys. 2014. Vol. 53, № 3. P. 32201.98.Johnston M.B., Whittaker D.M., Corchia A., Davies A.G., Linfield E.H.Simulation of terahertz generation at semiconductor surfaces // Phys. Rev. B.2002.
Vol. 65, № 16. P. 165301.99.Ravi K., Huang W.R., Carbajo S., Nanni E.A., Schimpf D.N., Ippen E.P.,Kärtner F.X. Theory of terahertz generation by optical rectification usingtilted-pulse-fronts // Opt. Express. 2015. Vol. 23, № 4. P. 5253.100. Kim K.Y., Taylor A.J., Glownia J.H., Rodriguez G. Coherent control ofterahertz supercontinuum generation in ultrafast laser–gas interactions // Nat.Photonics. 2008.
![](https://s.studizba.com/z.php?f=/templates/si/i/noavatar.png&w=100&h=100&t=1"){kind=avatar}
