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v.6. p.1051-1056.A7. Mankelevich Yu.A., Rakhimov A.T., Suetin N.V. Three-dimensional reactive flow simulations offilament-assisted diamond deposition // Proc. of the Fifth Internat. Sympos. On Diamond Materials,Editors: J.L. Davidson, W.D. Brown, A. Gicquel, B.V. Spitsyn, J.C. Angus. The ElectrochemicalSociety, Paris, France.

1997. v. 97-32. p.161-170.A8. Kostiuk S.V., Mankelevich Yu.A., Rakhimov A.T., Suetin N.V. Two-dimensional simulation ofdiamond deposition processes in microwave discharge reactors // Proc. 5th Int. Symp. on DiamondMaterials, Eds. J.L. Davidson, W.D. Brown, A. Gicquel, B.V. Spitsyn, J.C. Angus. The Electrochem.Soc., Paris, France. 1997. v.

97-32. p.152-160.A9. Mankelevich Y.A., Rakhimov A.T., Suetin N.V., Коstyuk S.V. Diamond deposition in plasmaactivated CVD reactors. Two-dimensional modeling. // in book “Diamond&Diamond-Like FilmApplications” Proceedings of Third Internat. Symp. On Diamond Films, S.-Petersburg, 1996, edit. P.J. Gielisse, V.I.

Ivanov-Omskii, G. Popovichi, M. Prelas, Technomic Publishing Corp. 1998. p.210218.A10. Mankelevich Yu.A., Suetin N.V. Three-dimensional distributions of methyl density in a hotfilament CVD reactor. Comparison with cavity ring-down spectroscopy measurements // Proceedingsof SPIE, Lasers in Synthesis, Characterization, and Processing of Diamond, Editor(s): Konov V.I.,Ralchenko V.G. 1998. v.3484. p.43-49.A11.

Mankelevich Yu.A., Rakhimov A.T., Suetin N.V. Three-dimensional simulation of a HFCVDreactor // Diamond Relat. Mater. 1998. v.7. p.1133-1137.A12. Mankelevich Yu.A., Rakhimov A.T., Suetin N.V., Aparin Y.J. 2D model DC discharge reactorfor diamond deposition // Ceramics International. 1998. v.24. p.255-257.313A13. Коstiuk S.V., Mankelevich Y.A., Rakhimov A.T., Suetin N.V. Reactive mixture activation by dcand mw discharges.

Two-dimensional simulation // Proc. of Physics and Technology Institute. 2000.v.16. p.38-47.A14. Манкелевич Ю.А., Суетин Н.В. Получение углеродных пленок // Энциклопедиянизкотемпературной плазмы, под ред. В.Е. Фортова, М: Наука. 2000. т. IV, с.404- 414.A15. Ashfold M.N.R., May P.W., Petherbridge J.R., Rosser K.N., Smith J.A., Mankelevich Yu.A.,Suetin N.V.

Unraveling aspects of the gas phase chemistry involved in diamond chemical vapourdeposition // Phys. Chem. Chem. Phys. 2001. v.3. p.3471-3485.A16. Mankelevich Yu.A., Suetin N.V., Ashfold M.N.R., Smith J.A., Cameron E. Experimental dataversus 3-D model calculations of HFCVD processes: correlations and discrepancies // Diamond andRelated Materials. 2001. v.10.

p.364-369.A17. Smith J.A., Cameron E., Ashfold M.N.R., Mankelevich Yu.A., Suetin N.V. On the mechanism ofCH3 radical formation in hot filament activated CH4/H2 and C2H2/H2 gas mixtures // Diamond andRelated Materials. 2001. v.10. p.358-363.A18. Mankelevich Yu.A., Suetin N.V., Smith J.A., Ashfold M.N.R.

Investigations of the gas phasechemistry in a hot filament CVD reactor operating with CH4/N2/H2 and CH4/NH3/H2 gas mixtures //Diamond and Related Materials. 2002. v.11. p.567-572.A19. Smith J.A., Wills J.B., Moores H.S., Orr-Ewing A.J., Ashfold M.N.R., Mankelevich Yu.A.,Suetin N.V. Effects of NH3 and N2 additions to hot filament activated CH4/H2 gas mixtures // J. Appl.Phys. 2002. v.92.

p.672-681.A20. Filippov A.V., Mankelevich Yu.A., Pal A.F., Rakhimov A.T., Serov A.O., Suetin N.V..Spectroscopy, actinometry and simulation of a DC discharge in CO/H2 gas mixtures // Proc. of SPIE,Select. Res. Papers on Spectroscopy of Nonequilibrium Plasma at Elevated Pressures, Ed. V.N.Ochkin. 2002. v.4460. p.285-295.A21.

Wills J.B., Ashfold M.N.R., Orr-Ewing A.J., Mankelevich Yu.A., Suetin N.V. Number densitiesand temperatures of acetylene in hot filament and arc-jet activated CH4/H2 gas mixtures measuredusing diode laser cavity ring-down spectroscopy // Diamond and Related Materials. 2003. v.12.p.1346-1356.A22. Mankelevich Yu.A., Suetin N.V., Ashfold M.N.R., Boxford W.E., Orr-Ewing A.J., Smith J.A.,Wills J.B.. Chemical kinetics in carbon depositing dc-arc jet CVD reactors // Diamond and RelatedMaterials. 2003.

v.12. p.383-390.A23. Rennick C.J., Smith A.G., Smith J.A., Wills J.B., Orr-Ewing A.J., Ashfold M.N.R., MankelevichYu.A., Suetin N.V. Improved characterisation of C2 and CH radical number density distributions in aDC arc jet used for diamond chemical vapour deposition // Diamond and Related Materials. 2004.v.13. p.561-568.A24. Rennick C.J., Engeln R., Smith J.A., Orr-Ewing A.J., Ashfold M.N.R., Mankelevich Yu.A.Measurement and modeling of a diamond deposition reactor: Hydrogen atom and electron numberdensities in an Ar/H2 arc jet discharge // J.

Appl. Phys. 2005. v.97. p. 113306-113320.A25. Rennick C.J., Ma J., Ashfold M.N.R., Orr-Ewing A.J., Mankelevich Yu.A. Spatial profiling ofH(n=2) atom number densities in a DC arc jet reactor // Plasma Sources Sci. Technology. 2006. v.15.p.432-440.A26. Comerford D.W., Cheesman A., Carpenter T.P.F., Davies D.M.E., Fox N.A., Sage R.S., SmithJ.A., Ashfold M.N.R., Mankelevich Yu.A. Experimental and Modeling Studies of B Atom NumberDensity Distributions in Hot Filament Activated B2H6/H2 and B2H6/CH4/H2 Gas Mixtures // J. Phys.Chem.

A. 2006. v.110. p.2868-2875.A27. May P.W., Smith J.A., Mankelevich Yu.A. Deposition of NCD films using hot filament CVDand Ar/CH4/H2 gas mixtures // Diamond and Related Mater. 2006. v.15. p.345-352.A28. May P.W., Mankelevich Yu.A. Experiment and modeling of the deposition ofultrananocrystalline diamond films using hot filament chemical vapor deposition and Ar/CH4/H2 gasmixtures: a generalized mechanism for ultrananocrystalline diamond growth // J. Appl. Phys. 2006.v.100. 024301.314A29.

May P.W., Mankelevich Y.A., Harvey J.N., Smith J.A. Re-evaluation of the mechanism forUNCD deposition from Ar/CH4/H2 gas mixtures // J. Appl. Phys. 2006. v.99. 104907.A30. Mankelevich Yu.A., Ashfold M.N.R., Orr-Ewing A.J. Measurement and modelling of Ar/H2/CH4arc jet discharge CVD reactors II: modelling of the spatial dependence of expanded plasma parametersand species number densities // J. Appl. Phys.

2007. v.102. 063310.A31. Rennick C.J., Ma J., Henney J.J., Wills J.B., Ashfold M.N.R., Orr-Ewing A.J., MankelevichYu.A. Measurement and modelling of Ar/H2/CH4 arc jet discharge CVD reactors I: inter-comparisonof derived spatial variations of H atom, C2 and CH radical densities // J. Appl.

Phys. 2007. v.102.063309.A32. May P.W., Ashfold M.N.R., Mankelevich Yu.A. Microcrystalline, nanocrystalline, andultrananocrystalline diamond chemical vapor deposition: Experiment and modelling of the factorscontrolling growth rate, nucleation, and crystal size // J.

Appl. Phys. 2007. v.101. 053115.A33. Comerford D.W., D'Haenens-Johansson U.F.S., Smith J.A., Ashfold M.N.R., Mankelevich Yu.A.Filament seasoning and its effect on the chemistry prevailing in hot filament activated gas mixturesused in diamond chemical vapour deposition // Thin Solid Films, 2008. v.516.

p.521–525.A34. May P.W, Mankelevich Yu.A. From Ultrananocrystalline Diamond to Single Crystal DiamondGrowth in Hot Filament and Microwave Plasma-Enhanced CVD Reactors: a Unified Model forGrowth Rates and Grain Sizes // J. Phys. Chem. C, 2008. v.112. p.12432–12441.A35. Mankelevich Yu.A., May P.W. New insights into the mechanism of CVD diamond growth.Single crystal diamond in MW PECVD reactors // Diamond and Related Materials.

2008. v.17.p.1021–1028.A36. Mankelevich Yu.A., Ashfold M.N.R., Ma J., Plasma-chemical processes in microwave plasmaenhanced chemical vapor deposition reactors operating with C/H/Ar gas mixtures // J. Appl. Phys.2008. v.104. 113304.A37. Ma J., Richley J.C., Ashfold M.N.R, Mankelevich Yu.A.

Probing the plasma chemistry in amicrowave reactor used for diamond chemical vapor deposition by cavity ring down spectroscopy // J.Appl. Phys., 2008. v.104. 103305.A38. Ma J., Ashfold M.N.R., Mankelevich Yu.A. Validating optical emission spectroscopy as adiagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition //J. Appl. Phys. 2009. v.105. 043302.A39. Ma J., Cheesman A., Ashfold M.N.R., Hay K.G., Wright S., Langford N., Duxbury G.,Mankelevich Yu.A. Quantum cascade laser investigations of CH4 and C2H2 interconversion inhydrocarbon/H2 gas mixtures during microwave plasma enhanced chemical vapor deposition ofdiamond // J.

Appl. Phys. 2009. v.106. 033305.A40. Butler J.E., Mankelevich Yu.A., Cheesman A., Ma J., Ashfold M.N.R. Understanding thechemical vapor deposition of diamond: recent progress // J. Phys.: Condens. Matter. 2009. v.21.364201.A41. Comerford D.W., Smith J.A., Ashfold M.N.R., Mankelevich Yu.A. On the mechanism of H atomproduction in hot filament activated H2 and CH4/H2 gas mixtures // J. Chem.

Phys. 2009. v.131.044326.A42. Fox O.J.L., Ma J., May P.W., Ashfold M.N.R., Mankelevich Yu.A. The role of inert gas in MWenhanced plasmas for the deposition of nanocrystalline diamond thin films // Diamond Relat. Mater.2009. v.18. p.750-758.A43. May P.W., Allan N.L., Ashfold M.N.R., Richley J.C., Mankelevich Yu.A. Simplified MonteCarlo simulations of chemical vapour deposition diamond growth // J. Phys.: Condens. Matter.

2009.v.21. 364203.A44. May P.W., Harvey J.N., Allan N.L., Richley J.C., Mankelevich Yu.A. Simulations of CVDDiamond Film Growth Using a Kinetic Monte Carlo Model and 2D Models of Microwave plasma andHot Filament CVD reactors // J. Appl. Phys. 2010. v.108. 114909.A45. Ma J., Richley J.C., Davies D.R., Cheesman A., Ashfold M.N.R., Mankelevich Yu.A.Spectroscopic and Modeling Investigations of the Gas-Phase Chemistry and Composition in MWPlasma Activated B2H6/Ar/H2 Mixtures // J. Phys. Chem. A.

2010. v.114. p.2447–2463.315A46. Ma J., Richley J.C., Davies D.R.W., Ashfold M.N.R., Mankelevich Yu.A. Spectroscopic andModeling Investigations of the Gas Phase Chemistry and Composition in Microwave Plasma ActivatedB2H6/CH4/Ar/H2 Mixtures // J. Phys. Chem. A, 2010. v.114. 10076–10089.A47. May P.W., Allan N.L., Ashfold M.N.R., J.C. Richley, Mankelevich Yu.A. Simulations ofpolycrystalline CVD diamond film growth using a simplified Monte Carlo model // Diamond andRelated Materials. 2010. v.19. p.389–396.A48. May P.W., Harvey J.N., Allan N.L., J.

C. Richley, Mankelevich Yu.A. Simulations of chemicalvapor deposition diamond film growth using a kinetic Monte Carlo model // J. Appl. Phys. 2010.v.108. 014905.A49. Richley J.C., Fox O.J.L., Ashfold M.N.R., Mankelevich Yu.A. Combined experimental andmodeling studies of mw activated CH4/H2/Ar plasmas for microcrystalline, nanocrystalline, andultrananocrystalline diamond deposition // J. Appl. Phys.

2011. v.109. 063307.A50. Umemoto H., Funae T., Mankelevich Yu.A. Activation and Decomposition of N2 on HeatedTungsten Filament Surfaces // J. Phys. Chem. C. 2011. v.115. p.6748–6756A51. Mankelevich Yu.A., Ashfold M.N.R., D.W. Comerford, J.Ma, Richley J.C. Boron doping:B/H/C/O gas phase chemistry; H atom density dependences on pressure and wire temperature; puzzlesregarding the gas-surface mechanism // Thin Solid Films.