Диссертация (Оптические и электрические свойства систем, содержащих ансамбли кремниевых нанокристаллов), страница 51
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61-71.157 Kocka, J., Stuchlicova, H., Stuchlik, J., Rezek, B., Mates, T., Svrcek, V., Fojtik, P.,Pelant, I., Fejfar, A. Model of transport in microcrystalline silicon // J. Non-Cryst.Solids. – 2002. – V. 299-302. – P. 355-359.158 Lecomber, P.G., Willeke, G., Spear, W.E. Some new results on transport and density ofstate distribution in glow discharge microcrystalline silicon // J.
Non-Cryst. Solids. –1983. – V. 59-60. – P. 795-798.159 Orton, J.W., Powel, M.J., The Hall effect in polycrystalline and powderedsemiconductors // Rep. Prog. Phys. – 1980. – V. 43. – P. 1263 -1307.160 Weis, T., Brehme, S., Kanschat, P., Fuhs, W., Lipperheide, R., Wille, U. Barrier-limitedcarrier transport in highly n-doped µc-Si:H thin films // J. Non-Cryst. Solids.
– 2002. –V. 299-302. - P. 380-384.161 Carius, R., Finger, F., Backhausen, U., Luysberg, M., Hapke, P., Houben, L., Otte, M.,Overhof, H. Electronic properties of microcrystalline silicon // Mat. Res. Soc. Symp.Proc. – 1997. – V. 467. – P. 283-294.162 Weis, T., Lipperheide, R., Wille, U., Brehme, S. Barrier-controlled carrier transport inmicrocrystalline semiconducting materials: description within a unifled model // J.Appl. Phys. – 2002. – V. 92. - №3.
– P.1411-1418.163 Hapke, P., Backhausen, U., Carius, R., Finger, F., Ray, S. Modulated Hall-effecttechniques for the study of transport properties of microcrystalline silicon with differentgrain sizes // Mat. Res. Soc. Symp. Proc. – 1996. – V. 420. - P. 789-794.289164 Shimakawa, K. Percolation-controlled electronic properties in microcrystalline silicon:effective medium approach // J. Non-Cryst.
Solids. – 2000. – V. 266-269. – P. 223-226.165 Liu, F., Zhu, M., Feng, Y., Han, Y., Liu, J., Kasouit, S., Vanderhaghen, R. Ttransportmechanism of microcrystalline silicon thin films // J. Non-Cryst. Solids. – 2002. – V.299-302. – P. 385-389.166 Huang, S., Wang, L., Ganguly, G., Xu, J., Huang, X., Matsuda, A., Chen, K. Thechange of transport mechanism in µc-Si:H films induced by H2-diluted silane plasma //J. Non-Cryst. Solids. – 2000.
– V. 266-269. – P. 347-351.167 Williams, M.J., Wang, C., Lucovsky, G. Deposition and characterization of near“intrinsic” µc-Si films deposited by remote plasma-enhanced chemical-vapor deposition– RPECVD // Mat. Res. Soc. Symp. Proc. – 1991. – V. 219. – P. 389-394.168 Lucovsky, G., Wang, C. Barrier limited transport mechanisms in doped µc-Si and µcSi:C // Mat. Res. Soc. Symp. Proc. – 1991. – V. 219. – P.
377-382.169 He, Y.L., Hu, G.Y., Yu, M.B., Liu, M., Wang, J.L., Xu, G.Y. Conduction mechanism ofhydrogenated nanocrystalline silicon films // Phys. Rev. B. – 1999. – V. 59. – P. 1535215357.170 Will, D., Lerner, C., Fuhs, W., Lips, K. Transport and recombination channels inundoped microcrystalline silicon studied by ESR and EDMR // Mat. Res. Soc. Symp.Proc. – 1997. – V.
467. – P. 361-366.171 Overhof, H., Otte, M., Schmidtke, M., Backhausen, U., Carius, R. The transportmechanism in micro-crystalline silicon // J. Non-Cryst. Solids. – 1998. – V. 227-230. –P. 992-995.172 Zhou, J.H., Baranovskii, S.D., Yamasaki, S., Ikuta, K., Kondo, M., Matsuda, A.,Tanaka, K. On the transport properties of microcrystalline silicon at low temperatures //ФТП. – 1998. – Т. 32. - №8. – С. 905-909.173 Juska, G., Arlauskas, K., Nekrasas, N., Stuchlik, J., Niquille, X., Wyrsch, N. Features ofcharge carrier transport determined from carrier extraction current in µc-Si:H // J.
NonCryst. Solids. – 2002. – V. 299-302. – P. 375-379.174 Kakalios, J., Street, R.A. Electronic transport in doped hydrogenated amorphous silicon// Phys. Rev. B. – 1986. – V. 34. - №8. – P. 6014-6016.175 Thomas, P. DC-Transport in amorphous semiconductors - phonon induceddelocalization // J. Non-Cryst. Solids. – 1985. – V. 77-78. – P. 121-130.290176 Stutzmann, M., Jackson, W.B., Tsai, C.C.
Kinetics of the Staebler-Wronski effect inhydrogenated amorphous silicon // Appl. Phys. Lett. – 1984. – V. 45. - №10. – P. 10751077.177 Palani, I.A., Vasa, N.J., Singaperumal, M. Crystallization and ablation in annealing ofamorphous-Si thin film on glass and crystalline-Si substrates irradiated by thirdharmonics of Nd3+:YAG laser // Mat. Sci Semicon. Proc. – 2008. – V. 11. – P. 107.178 Winer, K., Anderson, G.B., Ready, S.E., Bachrach, R.Z., Johnson, R.I., Ponce, F.A.,Boyce, J.B., Excimer laser induced crystallization of hydrogenated amorphous silicon //Appl. Phys.
Lett. – 1990. – V. 57. – P. 2222-2224.179 Ivlev, G., Gatskevich, E., Chab, V., Stuchlik, J., Vorlicek, V., Kocka, J. Dynamics ofthe excimer laser annealing of hydrogenated amorphous silicon thin films // Appl. Phys.Lett. – 1990. – V. 75. – P. 498-500.180 Brotherton, S.D., McCulloch, D.J., Gowers, J.P., Ayres, J., Trainor, M.J. Influence ofmelt depth in laser crystallized poly-Si thin film transistors // J. Appl. Phys. – 1997. –V. 82.
– P. 4086 – 4094.181 Sridhar, N., Chung, D.D.L., Anderson, W.A., Coleman, J. Effect of depositiontemperature on the structural and electrical properties of laser-crystallized hydrogenatedamorphous silicon films // J. Appl. Phys. – 1996. – V. 79. – P. 1569-1577.182 Brotherton, S.D., McCulloch, D.J., Gowers, J.P., Ayres, J.R., Trainor, M.J. Influence ofmelt depth in laser crystallized poly-Si thin film transistors // J.
Appl. Phys. – 1997. –V. 82. – P. 4086-4094.183 Schropp, R.E.I., Zeman, M. Amorphous and microcrystalline silicon solar cells:modeling, materials and device technology // London: Kluwer Academic Publishers,1998. – 207 P.184 Adikaari, A.A.D.T., Mudugamuwa, N.K., Silva, S.R.P. Nanocrystalline silicon solarcells from excimer laser crystallization of amorphous silicon // Sol. Energ. Mat. Sol.Cells. – 2008. – V. 92. – P.
634-638.185 Jiang, L., Lyou, J.H., Rane, S., Schiff, E.A., Wang, Q., Yuan, Q. Open circuit voltagephysics in amorphous silicon solar cells // MRS Proceedings. – 2000. – V. 609. – P.A18.3.1-A18.3.5291186 Kim, J.C., Schwartz, R.J., Gray, J.L. Factors affecting the open circuit voltage inamorphous silicon solar cells // Conference Record of the 23rd IEEE PhotovoltaicSpecialists Conference. – 1993. – P. 1001-1005.187 Jiang, L., Wang, Q., Schiff, E.A., Guha, S., Yang, J., Deng, X. Electroabsorptionmeasurements and built-in potentials in amorphous silicon p–i–n solar cells // Appl.Phys.
Lett. – 1996. – V. 69. – P. 3063-3065.188 Pearce, J.M., Koval, J.R., Ferlauto, A.S. Dependence of open-circuit voltage inhydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interfaceand bulk regions // Appl. Phys. Lett. – 2000. – V. 77. – P. 3093-3095.189 Adikaari, A.A.D.T., Carey, J.D., Stolojan, V., Keddie, J.L., Silva, S.R.P. Bandgapenhancement of layered nanocrystalline silicon from excimer laser crystallization //Nanotechnology. – 2006. – V.
17. – P. 5412-5416.190 Miyajima, S., Milne, W.I., Yoon, S.F., Tan, H.S. Photo-enhanced chemical vapourdeposition of hydrogenated amorphous silicon carbon using an internal discharge lamp,Mater. Sci. Eng. B. – 1995. – V. 35. – P. 138-144.191 Шкловский,Б.И.,Эфрос,А.Л.Электронныесвойствалегированныхполупроводников // М.: Наука, 1979. – 416 C.192 Снарский, А.А., Безсуднов, И.В., Севрюков, В.А.
Процессы переноса вмакроскопически неупорядоченных средах: от теории среднего поля доперколяции // М.: Издательство ЛКИ, 2007. – 304 C.193 Виноградов, А.П. Электродинамика композитных материалов // М.: ЭдиториалУРСС, 2001. – 176 C.194 Рывкин, С.М.Фотоэлектрические явления в полупроводниках// Москва,Физматгиз, 1963. – 496 C.195 Fuhs, W., Milleville, M., Stuke, J. Drift mobility and photoconductivity in amorphoussilicon // Phys.
Stat. Sol. B. – 1978. – V. 89. – P. 495-502.196 Бьюб, Р. Фотопроводимость твердых тел // Москва: Издательство иностраннойлитературы, 1962. – 558 C.197 Koch, C., Ito, M., Schubert, M.B., Werner, J.H. Low temperature deposition ofamorphous silicon based solar cells // Mater. Res. Soc. Symp. Proc. – 1999. – V. 557. –P. 749-755.292198 Heintze, M., Zedlitz, R. VHF plasma deposition for thin-film solar cells // Prog.Photovoltaic Res. Appl.
– 1993. – V. 1. – P. 213-224.199 Hamma, S., Cabarrocas, P.R. Low-temperature growth of thick intrinsic and ultrathinphosphorous or boron-doped microcrystalline silicon films: Optimum crystallinefractions for solar cell applications, Sol. Energ. Mater. Sol. Cell. – 2001. – V. 69. – P.217-221.200 Alpuim, P., Chu, V., Conde, J.P. Electronic and structural properties of dopedamorphous and nanocrystalline silicon deposited at low substrate temperatures by radiofrequency plasma-enhanced chemical vapor deposition // J.
Vac. Sci. Tech. A. – 2003. –V. 21. – P. 1048-1051.201 Han, D., Yue, G., Lorentzen, J.D., Lin, J., Habuchi, H., Wang, Q. Optical and electronicproperties of microcrystalline silicon as a function of microcrystallinity // J. Appl.
Phys.-2000. – V. 87. - №4. – P.1882-1888.202 Grebner, S., Popovic, P., Furlan, J., Gu, Q., Schwarz, R. The increased response time inhydrogenated microcrystalline silicon – a Fermi level effect or a structural effect in agrainy material?// Mat.
Res. Soc. Symp. Proc. – 1996. – V.420. – P.795-800.203 Overhof, H., Otte, M. Theoretical investigations of models for the electronic transportin microcrystalline silicon films / Future directions in thin film science and technology// Singapore: World Scientific, 1996. – P. 23-31.204 Chen, K., Qin, H., Huang, X., Ikuta, K., Matsuda, A., Tanaka, K. The effect ofhydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVDsystem // J. Non-Cryst. Solids. – 1996. – V.198-200. – P.891-894.205 Bruggemann, R., Main, C.
Fermi-level effect on steady-state and transientphotoconductivity in microcrystalline silicon // Phys. Rev. B. – 1998. – V. 57. - №24. –P. R15080-R15083.206 Vanderhaghen, R., Kasouit, S., Brenot, R., Chu, V., Conde, J.P., Liu, F., de Martino, A.,Cabarrocas, P.R. Electronic transport in microcrystalline silicon controlled by trappingand intra-grain mobility // J. Non-Cryst. Solids. – 2002. – V. 299-302.
