Диссертация (1104349), страница 16
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Meth. – 1983. – Vol.209210. – P. 487-494.67. Ichimura S., Shimizu H., Murakami H., Ishida Y. Effect of surface segregationon angular distributions of atoms sputtered from binary alloys // J. Nucl.Mater.– 1984. – Vol. 129-130. – P. 601-604.68.Kang H. J., Matsuda Y., Shimizu R.
Angular distributions of Au and Cu atomssputtered from Au-Cu alloys by keV Ar+ ion bombardment // Surf. Sci. –1983. –Vol. 127. – P. L179-L185.12069.Chernysh V.S., Tuboltsev V.S., Kulikauskas V.S. Angular distributions of Niand Ti atoms sputtered from a NiTi alloy under He+ and Ar+ ion bombardment//Nucl. Instr. Meth. Phys. Res. B.
– 1998. – Vol. 140. – P. 303-310.70.Распыление твёрдых тел ионной бомбардировкой. Распыление сплавов исоединений, распыление под действием электронов и нейтронов, рельефповерхности. Вып. II. / Под ред. Р. Бериша. – М.: Мир, 1986. – 488 с.71.R.M. Bradley, J.M.E. Harper. Theory of ripple topography induced by ionbombardment. // J.Vac.
Sci.Technol.A – 1988. – Vol. 6. – P. 2390-2395.72.G. Ehrlich and F. G. Hudda. Atomic View of Surface Self‐Diffusion: Tungstenon Tungsten. // J. Chem. Phys. – 1966. – Vol. 44. – P. 1039-1049.73.R.L. Schwoebel, Step Motion on Crystal Surfaces. II. // J. Appl. Phys. – 1969.– Vol. 40. – P.614-618.74.W. L. Chan, E. Chason. Making waves: Kinetic processes controlling surfaceevolution during low energy ion sputtering. // J. Appl. Phys. – 2007. – Vol.101. – P. 121301-1 – 121-301-46.75. M. A.
Makeev, A. L. Barabasi. Ion-induced effective surface diffusion in ionsputtering. // Appl. Phys. Lett. – 1997. – Vol. 71. – P. 280076.B.R. Jany, K. Szajna, M. Nikiel, D. Wrana, P. Indyka, R. Pedrys, F. Krok.Energy dependence of pillars formation on InSb semiconductor surfacesunder focused and broad ion beam irradiation. // Abstracts of the 26thInternational Conference on Atomic Collisions in Solids (ICACS-26),Debrecen, Hungary.
– 2014. – P. 177.77.Z. Insepov, I. Yamada. Molecular dynamics study of shock wave generationby cluster impact on solid targets. NIMB 112 (1996) 1678. T. Seki, T. Murase, J. Matsuo, Cluster size dependence of sputtering yield bycluster ion beam irradiation. NIMB 242 (2006) pp. 179-181.12179. T. Seki, T. Murase, J. Matsuo, Cluster size dependence of sputtering yield bycluster ion beam irradiation. NIMB 242 (2006) p. 179-181.80. Li Yang, M. P. Seah, I.S. Gilmore. Sputtering Yields for Gold Using ArgonGas Cluster Ion Beams. J. Phys. Chem.
C. 116 (2012) Pp. 23735-23741.81. Kitani, N. Toyoda, J. Matsuo, I. Yamada. Incident angle dependence of thesputtering effect of Ar-cluster-ion bombardment. NIMB 121 (1997) Pp. 489492.82. N. Toyoda, H. Kitani, N. Hagiwara, T. Aoki, J. Matsuo, I. Yamada. Angulardistributions of the particles sputtered with Ar cluster ions. Mater ChemPhys 54, (1998) Pp. 262-265.83. Z. Insepov, I. Yamada, M. Sosnowski. Sputterring and smoothing of metalsurface with energetic gas cluster beams.
Materials Chemistry and Physics54 (1998) Pp. 234-237.84. N. Toyoda, N. Hagiwara, J. Matsuo, I. Yamada, Surface smoothingmechanism of gas cluster ion beams. NIMB 161 (2000) Pp. 980-985.85.D.R. Swenson, E. Degenkolb, Z. Insepov, L. Laurent, G. Scheitrum.Smoothing RF cavities with gas cluster ions to mitigate high voltagebreakdown. NIMB 241 (2005) Pp. 641–644.86.D.R. Swenson, E. Degenkolb, Z. Insepov. Study of gas cluster ion beamsurface treatments for mitigating RF breakdown. Physica C 441 (2006) Pp.75–78.87.H. Chen , S.W. Liu, X.M. Wang, M.N.
Iliev, C.L. Chen, X.K. Yu, J.R. Liu,K. Ma, W.K. Chu. Smoothing of ZnO films by gas cluster ion beam. NIMB241 (2005) Pp.630–635.88.H. Isogai, E. Toyoda,T. Senda, K. Izunome, K. Kashima, N. Toyoda, I.Yamada. Study of Si wafer surfaces irradiated by gas cluster ion beams.NIMB 257 (2007) Pp. 683–686.12289.N. Toyoda, I. Yamada. Reduction of irradiation damage using sizecontrolled nitrogen gas cluster ion beams. NIMB 273 (2012) Pp 11–14.90.C. Heck, T. Seki, T.
Oosawa, M. Chikamatsu, N. Tanigaki, T. Hiraga, J.Matsuo. ITO surface smoothing with argon cluster ion beam. NIMB 242(2006) Pp. 140–14291.A. Yoshida, M. Deguchi, M. Kitabatake, T. Hirao, J. Matsuo, N. Toyoda, I.Yamada. Atomic level smoothing of CVD diamond films by gas cluster ionbeam etching. NIMB 112 (1996) Pp.148.92.N. Toyoda, N. Hagiwara, J.
Matsuo, I. Yamada. Surface treatment ofdiamond films with Ar and O2 cluster ion beams. NIMB 148 (1999) Pp.639-644.93.A. Nishiyama, M. Adachi, N. Toyoda, N. Hagiwara, J. Matsuo, I.Yamada.Surface smoothing of CVD-diamond membrane for X-ray lithography byGas Cluster Ion Beam. AIP Conf. Proc. 475 (1999) Pp. 421-424.94.W. K. Chu, Y. P. Li, J. R. Liu, J.
Z. Wu, S. C. Tidrow, N. Toyoda, J.Matsuo, I. Yamada. ,Smoothing of YBa2Cu3O7-δ films by ion cluster beambombardment. Appl. Phys. Lett. 72 (1998) Pp.246-248.95.S. Kakuta, S. Sasaki, K. Furusawa, T. Seki, T. Aoki, J. Matsuo. Lowdamage smoothing of magnetic materials using off-normal gas cluster ionbeam irradiation.
Surface & Coatings Technology 201 (2007) Pp. 8632–8636.96.S. Kakuta, S. Sasaki, T. Hirano, K. Ueda, T. Seki, S. Ninomiya, M. Hada, J.Matsuo. Low damage smoothing of magnetic material films using a gascluster ion beam. NIMB 257 (2007) Pp. 677–682.97.N. Toyoda, H. Kitani, N. Hagiwara, J. Matsuo, I. Yamada. Surfacesmoothing effects with reactive cluster ion beams. Mater Chem Phys 54(1998) Pp. 106-110.98.T. Seki, J. Matsuo.
High-speed processing with high-energy SF6 cluster ionbeam. NIMB 257 (2007) Pp. 666–669.12399. T. Seki, T. Aoki, J. Matsuo. High-speed processing with Cl2 cluster ion beam.NIMB 267 (2009) Pp. 1444–1446.100. N. Toyoda, I. Yamada. Dependence of energy per molecule on sputteringyields with reactive gas cluster ions. NIMB 268 (2010) Pp. 3291–3294.101.
T. Seki, T. Aoki, J. Matsuo. Etching of metallic materials with Cl2 gas clusterion beam. Surface & Coatings Technology 206 (2011) Pp. 789–791.102. A. Yamaguchi, R. Hinoura, N. Toyoda, K. Hara, and I. Yamada. Gas ClusterIon Beam Etching under Acetic Acid Vapor for Etch-Resistant Material,Japanese Journal of Applied Physics 52 (2013) 05EB05, 4 pp.103. J.
Matsuo, N. Toyoda, M. Akizuki, I. Yamada, Sputtering of elemental metalsby Ar cluster ions. NIMB 121 (1997) Pp. 459-463.104. K. Sumie, N. Toyoda, I. Yamada. Surface morphology and sputtering yield ofSiO2 with oblique-incidence gas cluster ion beam. NIMB 307 (2013) Pp.290–293.105. А.А. Андреев, Ю.А. Ермаков, А.Е. Иешкин, А.С. Патракеев, В.С.Черныш.Ускорительгазовыхкластерныхионов.Наукоемкиетехнологии, 12, № 6, с. 3-11106.
C. Verdeil, T. Wirtz, and H. Scherrer. Angular distribution of GaAs sputteredunder oblique Cs+ bombardment. Nucl. Instr. Meth. B. 267 (2009) 27452747.107. V.S. Chernysh, A.S. Patrakeev. Angular distribution of atoms sputtered fromalloys. Nucl. Instr. Meth. B. 270 (2012) Pp. 50-54.108. V.S. Tubolt’sev, V.S. Chernysh, and V.S. Kulikauskas. Effect of thebombarding ion masses in alloy sputterings. JETP Letters 63 (1996) 532109. R.R. Olson, M.E. King, G.K. Whehner. Mass effects on angular distributionof sputtered atoms, J. Appl. Phys.
50 (1979) 3677.110. J. Ullmann, A. Delan, G. Schmidt. Ion etching behaviour and surface bindingenergies of hard diamond-like carbon and microwave chemical vapourdeposition diamond films. Diamond and Related Materials 2 (1993), Pp 266271.124.














