Диссертация (Исследование электронного транспорта в планарных наноструктурах молекулярного масштаба), страница 20
Описание файла
Файл "Диссертация" внутри архива находится в папке "Исследование электронного транспорта в планарных наноструктурах молекулярного масштаба". PDF-файл из архива "Исследование электронного транспорта в планарных наноструктурах молекулярного масштаба", который расположен в категории "". Всё это находится в предмете "физико-математические науки" из Аспирантура и докторантура, которые можно найти в файловом архиве МГУ им. Ломоносова. Не смотря на прямую связь этого архива с МГУ им. Ломоносова, его также можно найти и в других разделах. , а ещё этот архив представляет собой кандидатскую диссертацию, поэтому ещё представлен в разделе всех диссертаций на соискание учёной степени кандидата физико-математических наук.
Просмотр PDF-файла онлайн
Текст 20 страницы из PDF
M. " Shot Noise Measurements on a SingleMolecule" // Nano Lett., 2006, vol. 6(4), p.789[43]. Lortscher E.,Tour J. M., Ciszek J. W., Riel H. " A Single-Molecule Switchand Memory Element" // Proc. Int. Conf. on Nanoscience and Technology, Journalof Physics: Conference Series, 2007, vol. 61, p. 987[44]. Lortscher E., Ciszek J.W., Tour J., Riel H. " Reversible and ControllableSwitching of a Single-Molecule Junction" // Small, 2006,vol. 2, no. 8-9, p.973[45].
Reichert J., Weber H. B., Mayor M. " Low-Temperature ConductanceMeasurements On Single Molecules" // Appl. Phys. Lett., 2003, vol. 82, p.4137[46]. Reichert J., Ochs R., Beckmann D., et al. " Driving Current through SingleOrganic Molecules" // Phys. Rev. Lett., 2002, vol. 88, p. 176804[47]. Ruitenbeek J., Scheer E., Weber H.B. " Contacting Individual MoleculesUsing Mechanically Controllable Break Junctions"// Introducing MolecularElectronics Lecture Notes in Physics, 2005, vol.
680, p.253[48]. Weber H.B., Reichert J., Weigend F., et al. " Electronic transport throughsingle conjugated molecules" // Chemical Physics, 2002, vol. 281, p.113130[49]. Hu W., Sarveswaran K., Lieberman M., Bernstein G.H. " Sub-10 nm electronbeam lithography using cold development of poly.methylmethacrylate." // J. Vac.Sci.
Technol. B, 2004, vol. 22(4), p.1711[50]. Liu K., Avouris Ph., Bucchignano J., et al. " Simple fabrication scheme forsub-10 nm electrode gaps using electron-beam lithography" // Appl. Phys. Lett.,2002, vol. 80, p.865[51]. Saifullah M.S.M., Ondarcuhu T., Koltsov D.K., et al. " A reliable scheme forfabricating sub-5 nm co-planar junctions for single-molecule electronics" //Nanotechnology, 2002, vol.13, p.659[52]. Blom T., Welch K., Stromme M., et al. " Fabrication and characterization ofhighly reproducible, high resistance nanogaps made by focused ion beam milling"// Nanotechnology, 2007, vol.18, p.285301[53]. Nagase T., Gamo K., Kubota T., Mashiko S.
" Maskless fabrication ofnanoelectrode structures with nanogaps by using Ga focused ion beams" //Microelectronic Engineering, 2005, vol.78–79, p.253[54]. Nagase T., Gamo K., Kubota T., Mashiko S. " Direct fabrication of nano-gapelectrodes by focused ion beam etching" // Thin Solid Films, 2006, vol. 499, p.279[55]. Nagase T., Gamo K., Ueda R., et al. " Maskless fabrication of nanogapelectrodes by using Ga-focused ion beam etching" // J. Microlith., Microfab.,Microsyst., 2006, vol. 5(1), p.011006[56]. Reyntjens S., Puers R.
" A review of focused ion beam applications inmicrosystem technology" // J. Micromech. Microeng., 2001, vol. 11, p.287[57]. Shigeto K., Kawamura M., Kasumov A.Yu., et al. " Reproducible formationof nanoscale-gap electrodes for single-molecule measurements by combination of131FIB deposition and tunneling current detection" // Microelectronic Engineering,2006, vol.83, p.1471[58]. Boussaad S., Tao N. J. " Atom-size gaps and contacts between electrodesfabricated with a self-terminated electrochemical method" // Appl. Phys. Lett.,2002, vol. 80(13), p.2398[59]. Ah C.S., Yun J.Y., Lee J.S., et al. " Fabrication of integrated nanogapelectrodes by surface-catalyzed chemical deposition" // Appl. Phys. Lett., 2006,vol.88, p.133116[60]. Deshmukh M.M., Prieto A.L., Gu Q. " Fabrication of Asymmetric ElectrodePairs with Nanometer Separation Made of Two Distinct Metals" // Nano Letters,2003, vol.3(10), p.1383[61].
Xiang J., Liu B., Wu S.-T., et al. " A Controllable ElectrochemicalFabrication of Metallic Electrodes with a Nanometer/Angstrom-Sized Gap Usingan Electric Double Layer as Feedback" // Angewandte Chemie InternationalEdition, 2005, vol.44, iss.8, p.1265[62]. Neugebauer C. A., Webb M. B. "Electrical Conduction Mechanism inUltrathin, Evaporated Metal Films" // J. Appl. Phys., 1962, vol.
33, p.74[63]. Zeller H. R., Giaever I. "Tunneling, Zero-Bias Anomalies, and SmallSuperconductors" // Phys. Rev. , 1969, vol.181, p.789[64]. MSDS 950PMMA Series Resists in Chlorobenzenehttp://www.clean.cise.columbia.edu/msds/950%20PMMA%20in%20Chlorobenzene.pdf[65].MSDSMMA(8.5)MAACopolymerSeriesResistshttp://www.clean.cise.columbia.edu/msds/8.5%20MAA%20Copolymer%20Resist.pdf132[66].ПашкинЮ.А."Коррелированныйтранспортвметаллическихнаноструктурах с кулоновской блокадой" дисс. д.ф.-м.н., Москва, 2011, 191 с.[67]. Strachan D.R., Smith D.E., Johnston D.E.
" Controlled fabrication ofnanogaps in ambient environment for molecular electronics" // Appl. Phys. Lett.,2005, vol. 86, p.043109[68]. Blech I.A., Sello H., "The failure of thin aluminum current-carrying strips onoxidized silicon" // IEEE Proc. 5th Annual Symposium on the Physics of Failure inElectronics, 1966, p.496[69]. d'Heurle F.M., Rosenberg R.
"Electromigration in Thin Films", in Physics ofThin Films, Academic Press, New York, 1973, vol.7, p.257[70]. Ho P. S. "Analysis of grain‐boundary electromigration" // J. Appl.Phys.,1978, vol.49, p.2735[71]. Hummel R. E., Huntington H. B. "Electro- and Thermo-transport in Metals &Alloys: Symposium " // Niagara Falls, N.Y., 1976[72].
Ho P.S., Kwok T. " Electromigration in metals" // Rep. Prog. Phys., 1989,vol.52, p. 301[73]. Ho P.S., Howard J.K. " Grain‐boundary solute electromigration inpolycrystalline films" // J. Appl. Phys., 1974, vol.45, p.3229[74]. Kwok T., Ho P.S., Yip S., et al. " Evidence for Vacancy Mechanism in GrainBoundary Diffusion in bcc Iron: A Molecular-Dynamics Study" // Phys. Rev.Lett.,1981, vol.47, p.1148[75]. Kwok T., Ho P.S. " Computer simulation of vacancy migration in a fcc tiltboundary" // Surface Science, 1984, vol.144, iss.1, p.44133[76]. Huntington H.
B., Kalukin A., Meng P. P., et al. " A computer simulation ofstripe deterioration through electromigration" // J. Appl. Phys.,1991, vol.70, p.1359[77]. Ghate P.B. "Electromigration Testing of Al-Alloy Films" // Proc. 19th IEEESymp. on Reliability in Physics,1981 , p.243[78]. Attardo M. J., Rosenberg R. " Electromigration Damage in Aluminum FilmConductors" // J. Appl. Phys.,1970, vol.41, p.2381[79]. Blech I.A., Meieran E.S. "Direct transmission electron microscopeobservation of electrotransport in aluminum thin films" // Appl.
Phys. Lett., 1967,vol.11, p.263[80]. Rosenberg R., Berenbaum L. "Atomic transport in solids and liquids" // Proc.of the Europhysics Conference, 1971, p.113[81]. Berenbaum L. " Electromigration Damage of Grain-Boundary Triple Pointsin Al Thin Films " // J. Appl. Phys., 1971, vol.42, p.880[82]. Blech I.A., Meieran E.S. " Electromigration in Thin Al Films" // J. Appl.Phys., 1969, vol.40, p.485[83]. Heersche H.B., Lientschnig G., O'Neill K., van der Zant H.S.J. " In situimaging of electromigration-induced nanogap formation by transmission electronmicroscopy" // Appl. Phys.
Lett., 2007, vol. 91, iss. 7, p.072107[84]. Munoz R.C., Arenas C., Kremer G., "Surface roughness and surface-inducedresistivity of gold films on mica: influence of the theoretical modelling of electronsurface scattering" // J. Phys.: Condens. Matter, 2000, vol.12, p.379[85]. Губин С.П., Юрков Г.Ю., Катаева Н.А., "Наночастицы благородныхметаллов и материалы на их основе" // ИОНХ РАН, Москва, 2006, 154 стр.134[86]. Chen F., Li X., Hihath J., et al. "Effect of Anchoring Groups on SingleMolecule Conductance: Comparative Study of Thiol-, Amine-, and CarboxylicAcid-Terminated Molecules" // J.
Am. Chem. Soc., 2006, vol.128, p.15874[87]. Ulman A. "Formation and Structure of Self-Assembled Monolayers" //Chem. Rev., 1996, vol. 96, p.1533[88]. Chen F., Li X., Hihath J., et al. "Conductance of Single Alkanedithiols:Conduction Mechanism and Effect of Molecule−Electrode Contacts" // J. Am.Chem. Soc., 2006, vol. 128, p.15874[89]. Edelman V.S., Fionova L.K., Polyak L.E., et al. "The Scanning TunnelingMicroscope Investigation of Grain Boundaries in Silicon " // Physica status solidi(a), 1991, vol. 123, iss.1, p.193[90]. Porath D., Bar-Sadeh E., Goldstein Y., et al. "Annealing Study of Gold FilmsUsing Scanning Tunneling Microscopy" // J. Vac. Sci. Technol. A, 1995, vol.13,p.1165[91].
Porath D., Gersten J.I., Millo O. "Scanning Tunneling Microscopy Studiesand Computer Simulations of Annealing of Gold Films" // J. Vac. Sci. andTechnol. B, 1996, vol.14(1), p.30[92]. MSDS Functionalized gold nanoparticles 2 - 3 nm particle sizehttp://www.sigmaaldrich.com/catalog/product/aldrich/660426[93]. MSDS Functionalized gold nanoparticles 3 - 5 nm particle size (TEM)http://www.sigmaaldrich.com/catalog/product/aldrich/660434[94]. Kuturov A.N., Varlashkin A.V., Soldatov E.S., Polyakova L.A., Gubin S.P."Au nanoparticles on atomically smooth gold film surfaces " // Inorganic Materials,2011, vol.47, iss.9, p.947135[95].
