Диссертация (Исследование и разработка методов автоматического вывода геометрических ограничений с использованием декларативного программирования и формальных методов), страница 24
Описание файла
Файл "Диссертация" внутри архива находится в папке "Исследование и разработка методов автоматического вывода геометрических ограничений с использованием декларативного программирования и формальных методов". PDF-файл из архива "Исследование и разработка методов автоматического вывода геометрических ограничений с использованием декларативного программирования и формальных методов", который расположен в категории "". Всё это находится в предмете "технические науки" из Аспирантура и докторантура, которые можно найти в файловом архиве РТУ МИРЭА. Не смотря на прямую связь этого архива с РТУ МИРЭА, его также можно найти и в других разделах. , а ещё этот архив представляет собой кандидатскую диссертацию, поэтому ещё представлен в разделе всех диссертаций на соискание учёной степени кандидата технических наук.
Просмотр PDF-файла онлайн
Текст 24 страницы из PDF
// 30th European Mask and Lithography Conference / International Society for Optics andPhotonics. — 2014.151. Understanding the critical challenges of self-aligned octuple patterning / Ji Yu,Wei Xiao, Weiling Kang, Yijian Chen // SPIE Advanced Lithography / International Society for Optics and Photonics. — 2014.152. First DailyTech IDF09 Intel Demonstrates. 22nm Chips Discusses Die ShrinkRoadmap // URL http://www. dailytech. com/IDF09+ Intel+ Demonstrates+First+ 22nm+ Chips+ Discusses+ Die+ Shrink+ Roadmap/article16312.
htm.153. Lin Burn J. The future of subhalf-micrometer optical lithography // Microelectronic engineering. — 1987. — Vol. 6, no. 1. — Pp. 31–51.154. Despiteeconomicslowdown,Intelontrackwith32nmofwin.—http://arstechnica.com/gadgets/2008/12/despite-economic-slowdown-intel-on-track-with-32nm-of-win/. — Accessed:2016-09-10.155. Immersion liquids for lithography in the deep ultraviolet / Michael Switkes, Roderick R Kunz, Roger F Sinta et al. // Microlithography 2003 / International Societyfor Optics and Photonics.
— 2003. — Pp. 690–699.156. Defectivity in water immersion lithography / U Okoroanyanwu, J Kye, N Yamamoto, K Cummings // Microlithography World. — 2005. — Vol. 14, no. 4. —Pp. 4–7.123157. Implications of immersion lithography on 193-nm photoresists / J Christopher Taylor, Charles R Chambers, Ryan Deschner et al. // Microlithography 2004 /International Society for Optics and Photonics. — 2004. — Pp. 34–43.158. Imaging capabilities of resist in deep ultraviolet liquid immersion interferometriclithography / Alex K Raub, A Frauenglass, SRJ Brueck et al. // Journal of VacuumScience & Technology B.
— 2004. — Vol. 22, no. 6. — Pp. 3459–3464.159. One-Photon Ionization of Liquid Water upon 193nm Laser Irradiation. / Akyhiro Iwata, Nobuaki Nakashima, Yasukazu Izawa, Chiyoe Yamanaka // Chemistryletters. — 1993. — no. 11. — Pp. 1939–1940.160. Pixelated source and mask optimization for immersion lithography / Xu Ma,Chunying Han, Yanqiu Li et al. // JOSA A. — 2013. — Vol. 30, no. 1.
— Pp. 112–123.161. Polarization aberration compensation method by adjusting illumination partial coherent factors in immersion lithography / Yue Jia, Yanqiu Li, Lihui Liu et al. //SPIE/COS Photonics Asia / International Society for Optics and Photonics. —2014.162. High-performance circuit design for the RET-enabled 65-nm technology node /Lars W Liebmann, Arnold E Barish, Zachary Baum et al. // Microlithography2004 / International Society for Optics and Photonics. — 2004. — Pp.
20–29.163. Characterization of density profile of laser-produced Sn plasma for 13.5 nm extreme ultraviolet source / Y Tao, H Nishimura, S Fujioka et al. // Applied PhysicsLetters. — 2005. — Vol. 86, no. 20. — P. 201501.164. Theoretical RCI Simulation for Spectra Emitted from Sn and Xe Ions as anEUV Light Source / Takashi Kagawa, Katsunobu Nishihara, Akira Sasaki, Fumihiro Koike.165. Comparison of EUV spectral and ion emission features from laser-produced Snand Li plasmas / RW Coons, D Campos, M Crank et al. // SPIE Advanced Lithography / International Society for Optics and Photonics.
— 2010. — Pp. 763636–763636.124166. Excimer lasers for superhigh NA 193-nm lithography / Rainer Paetzel, Hans Albrecht, Peter Lokai et al. // Microlithography 2003 / International Society for Optics and Photonics. — 2003. — Pp. 1665–1671.167. Spectral control of emissions from tin doped targets for extreme ultraviolet lithography / SS Harilal, B O’Shay, MS Tillack et al. // Journal of Physics D: AppliedPhysics. — 2006. — Vol. 39, no. 3. — P. 484.168. Power up: 120 Watt injection-locked ArF excimer laser required for both multipatterning and 450 mm wafer lithography / Takeshi Asayama, Youichi Sasaki,Takayuki Nagashima et al. // SPIE Advanced Lithography / International Societyfor Optics and Photonics. — 2013.169.
EUV lithography: status, future requirements and challenges / Vadim Banine,Maarten van Kampen, Andrei Yakunin, Vladimir Ivanov. — 2013.170. Das Sunil R. A new light source for EUV lithography // Spectrum, IEEE. — 2008.— Vol. 45, no. 3. — Pp. 14–14.171. Chen Frederick T. Asymmetry and thickness effects in reflective EUV masks //Microlithography 2003 / International Society for Optics and Photonics. — 2003.— Pp. 347–357.172.
EUV production insertion: Factors to watch. —https://www.asml.com/euv-is-at-the-cusp-of-being-introduced-in-volume-chip-production-the-industrializatien/s41905?rid=41906. — Accessed: 2016-12-10.173. Hamm Robert, Hamm Marianne. The beam business: Accelerators in industry //Physics Today. — 2011. — Vol. 64, no. 6.174. ASML demonstrates EUV with 130W light source, customers achieving 70 percent uptime. — http://www.dvhardware.net/article62846.html.
— Accessed:2016-05-20.175. Demagnification in proximity x-ray lithography and extensibility to 25 nmby optimizing Fresnel diffraction / Yuli Vladimirsky, Antony Bourdillon,Olga Vladimirsky et al. // Journal of Physics D: Applied Physics. — 1999. —Vol. 32, no. 22. — P. L114.125176. Near-field x-ray lithography to 15 nm / Antony J Bourdillon, Gwyn P Williams,Yuli Vladimirsky, Chris B Boothroyd // Microlithography 2004 / InternationalSociety for Optics and Photonics.
— 2004. — Pp. 546–557.177. Sidewall slopes of SU-8 HARMST using deep X-ray lithography /Kaushal Dhirendra Vora, Bow Yuen Shew, Erol C Harvey et al. // Journalof Micromechanics and Microengineering. — 2008. — Vol. 18, no. 3.178. Early K, Schattenburg ML, Smith Henry I. Absence of resolution degradation inX-ray lithography for λ from 4.5 nm to 0.83 nm // Microelectronic Engineering.— 1990. — Vol. 11, no. 1-4. — Pp. 317–321.179. Broers AN, Hoole ACF, Ryan JM. Electron beam lithography—resolution limits //Microelectronic Engineering. — 1996.
— Vol. 32, no. 1. — Pp. 131–142.180. Secondary electron generation in electron-beam-irradiated solids: resolution limits to nanolithography / Kyu Lee, SM Yoon, SC Lee et al. // J. Kor. Phys. Soc. —2009. — Vol. 55, no. 4. — Pp. 1720–1723.181. Anderson Erik, Chao Weilun. Double exposure makes dense high-resolutiondiffractive optics.182. Dapor Maurizio, Ciappa Mauro, Fichtner Wolfgang.
Monte Carlo modeling in thelow-energy domain of the secondary electron emission of polymethylmethacrylatefor critical-dimension scanning electron microscopy // Journal of Micro/Nanolithography, MEMS, and MOEMS. — 2010. — Vol. 9, no. 2.183. Long-distance charge transport in duplex DNA: the phonon-assisted polaronlike hopping mechanism / Paul T Henderson, Denise Jones, Gregory Hampikianet al. // Proceedings of the National Academy of Sciences. — 1999. — Vol. 96,no.
15. — Pp. 8353–8358.184. Seiler H. Secondary electron emission in the scanning electron microscope // Journal of Applied Physics. — 1983. — Vol. 54, no. 11.185. Measurement of the role of secondary electrons in EUV resist exposures. — http://www.euvlitho.com/2013/P29.PDF. — Accessed: 2016-05-20.126186.
Liddle JA, Gallatin GM, Ocola LE et al. Resist requirements and limitations fornanoscale electron-beam patterning. — 2003.187. The inclusion of secondary electrons and Bremsstrahlung X-rays in an electronbeam resist model / VV Ivin, MV Silakov, DS Kozlov et al. // Microelectronicengineering. — 2002. — Vol. 61. — Pp. 343–349.188. Novel proximity effect including pattern-dependent resist development in electronbeam nanolithography / Kenji Yamazaki, Kenji Kurihara, Toru Yamaguchi et al. //Japanese journal of applied physics. — 1997.
— Vol. 36, no. 12S.189. Influence on the secondary electron yield of the space charge induced in an insulating target by an electron beam / Raphaël Renoud, C Attard, JP Ganachaudet al. // Journal of Physics: Condensed Matter. — 1998. — Vol. 10, no. 26.190. Technology mapping with Boolean matching, supergates and choices /Alan Mishchenko, Satrajit Chatterjee, Robert Brayton et al. — 2005.191. Vujkovic Miodrag, Sechen Carl. Optimized power-delay curve generation forstandard cell ICs // Proceedings of the 2002 IEEE/ACM international conferenceon Computer-aided design / ACM. — 2002.
— Pp. 387–394.192. Correia Vinícius, Reis André. Advanced technology mapping for standard-cellgenerators // Proceedings of the 17th symposium on Integrated circuits and systemdesign / ACM. — 2004. — Pp. 254–259.193. DAG based library-free technology mapping / Felipe S Marques, LS Rosa Jr, Renato P Ribas et al.
// Proceedings of the 17th ACM Great Lakes symposium onVLSI / ACM. — 2007. — Pp. 293–298.194. Н.В. Рыженко, А.А. Сорокин. Алгоритм размещения транзисторовстандартных ячеек // Проблемы разработки перспективных микро- инаноэлектронных систем - 2014. Сборник трудов. — 2014. — № 1. —С. 133–136.195. Riepe Michael, Sakallah Karem. Transistor placement for noncomplementary digital VLSI cell synthesis // ACM Transactions on Design Automation of ElectronicSystems (TODAES). — 2003. — Vol. 8, no.
